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Diodes Incorporated VN10LPSTZ
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- Part No.:
- VN10LPSTZ
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- E-Line-3, Formed Leads
- Datasheet:
-
VN10LPSTZ.pdf
- Description:
- MOSFET VMOS N-CHAN TO92-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,442
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Product details
Overview
VN10LPSTZ from Diodes Incorporated is a 60V N-channel enhancement-mode vertical DMOSFET in E-Line (TO-92 compatible) package, rated for 270mA continuous drain current, 5Ω RDS(ON) at VGS = 10V, and 625mW power dissipation. It serves as a low-side load switch in automotive body electronics, LED bias control, and small-signal power management circuits.
For engineers reviewing the VN10LPSTZ datasheet, VN10LPSTZ pinout, VN10LPSTZ application, or VN10LPSTZ equivalent, this part supports discrete switching in space-constrained through-hole designs requiring JEDEC-qualified reliability, RoHS-compliant lead-free construction, and thermal resistance of 71°C/W (junction-to-leads).
Technical Context
This vertical DMOSFET uses enhancement-mode operation with gate threshold voltage between 0.8V and 2.5V, enabling direct TTL/CMOS logic-level drive without external level shifting. Its 60V VDSS rating supports operation across 12V and 24V automotive supply rails under transient conditions.
With 10ns turn-on/turn-off times and 60pF input capacitance, it delivers fast switching performance suitable for PWM-controlled loads up to ~100kHz. The device is not recommended for new designs per manufacturer notice, but remains supported for legacy BOM continuity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands peak drain-source voltage up to 60V, supporting 24V automotive systems with ISO 7637-2 pulse immunity margin. |
| RDS(ON) | 5.0 Ω @ VGS = 10V - Delivers ≤1.35V drop at 270mA, limiting conduction loss to <365mW in steady-state switching. |
| ID (continuous) | 270 mA - Maximum DC load current with derating above 25°C ambient, defined for minimum pad layout on FR4 PCB. |
| PD | 625 mW - Power dissipation limit under still-air conditions with 12mm lead length; requires thermal relief for sustained operation. |
| VGS(TH) | 0.8–2.5 V - Gate threshold range ensures reliable turn-on with 3.3V or 5V logic drivers, minimizing risk of partial enhancement. |
| Ciss | 60 pF - Input capacitance determines gate drive strength requirement; enables use with low-current microcontroller GPIOs. |
| RθJL | 71 °C/W - Junction-to-leads thermal resistance confirms effective heat transfer through drain lead to PCB copper pour. |
Pinout & Package
Package: E-Line (TO-92 compatible), molded plastic with matte tin-plated leads, UL 94V-0 rated, weight ≈ 0.159 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts logic-level voltage (0.8–2.5V threshold); requires <100nA leakage current handling in high-impedance drive circuits. |
| D (Drain) | High-side current path terminal | Connected to load supply rail; carries full switched current and dissipates heat via lead-to-PCB conduction (RθJL = 71°C/W). |
| S (Source) | Reference node / return path | Bonded to substrate; tied to system ground or low-side shunt; establishes VGS reference for gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC-qualified reliability | Qualified to AEC-Q101 standards for high-reliability discrete semiconductors, including HTRB, HTGB, and temperature cycling tests. |
| Lead-free & "Green" construction | Halogen- and antimony-free molding compound (<900ppm Br, <900ppm Cl, <1000ppm Sb), fully compliant with RoHS 3 (2015/863/EU). |
| Low RDS(ON) at 10V drive | 5.0Ω maximum enables efficient switching in battery-powered sensors and micro-power modules where gate drive voltage is fixed. |
| Fast switching speed | 10ns tON/tOFF supports PWM dimming and digital load control up to 100kHz without significant switching loss penalty. |
| TO-92-compatible footprint | E-Line package allows drop-in replacement in legacy through-hole layouts designed for TO-92 transistors, easing redesign effort. |
Applications
| Automotive Interior Lighting | Industrial Sensor Biasing |
|---|---|
Use Scenario: Driving white LED strings in door courtesy lights and map lamps using 12V supply with PWM dimming. IC Role / Device Role / Timing Role: Low-side constant-current switch controlled by MCU PWM output. Use Value: 270mA rating supports multi-LED chains; 5Ω RDS(ON) limits self-heating to <365mW at full brightness. |
Use Scenario: Enabling/disabling analog sensor excitation current (e.g., RTD, bridge transducer) in programmable logic controllers. IC Role / Device Role / Timing Role: Precision on/off control of bias current path with minimal leakage (<10µA IDSS). Use Value: Sub-µA off-state leakage preserves sensor accuracy; 0.8V VGS(TH) ensures compatibility with 3.3V I/O domains. |
| Consumer Appliance Motor Control | Medical Diagnostic Instrument Power Gating |
Use Scenario: Controlling small DC cooling fans or solenoid valves in smart home appliances powered from 24V SMPS rails. IC Role / Device Role / Timing Role: Discrete power switch interfacing between microcontroller and inductive load. Use Value: 60V VDSS withstands flyback spikes from inductive kickback; 10ns switching minimizes energy loss during transitions. |
Use Scenario: Isolating power to analog front-end circuitry (e.g., ECG amplifier stages) during standby mode in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-leakage, low-noise power gate ensuring signal integrity during active measurement cycles. Use Value: 100nA max IGSS prevents gate perturbation; RθJL = 71°C/W enables stable junction temperature in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZVN2110A | Higher RDS(ON) (10Ω @ VGS=10V), lower VDSS (60V same), same TO-92 package | Reduced efficiency at 270mA; higher conduction loss (~730mW vs. 365mW) | Acceptable only if thermal budget permits higher junction temperature rise. |
| DMN2004LK-7 | Surface-mount SOT-23 package, 4.5Ω RDS(ON), 20V VDSS, 600mA ID | Not suitable for 24V systems due to 20V rating; incompatible footprint | Select only for new surface-mount designs operating ≤12V with higher current demand. |
Compared with ZVN2110A and DMN2004LK-7, VN10LPSTZ uniquely balances 60V capability, through-hole compatibility, and sub-5Ω on-resistance-making it irreplaceable in legacy 24V automotive modules where board rework is prohibited.
Availability
VN10LPSTZ is available at Aetrix Electronics and suitable for automotive interior lighting, industrial sensor biasing, and consumer appliance motor control requiring stable component supply and long-term BOM continuity.
Supply support for VN10LPSTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned with AEC-Q standards.
VN10LPSTZ belongs to Diodes' E-Line vertical DMOSFET product line, engineered for cost-sensitive, space-constrained through-hole switching applications in automotive and industrial environments where JEDEC reliability and RoHS compliance are mandatory.
FAQ
Is VN10LPSTZ pin-compatible with standard TO-92 transistors?
Yes - VN10LPSTZ uses the E-Line package, which matches TO-92 mechanical dimensions and lead spacing (2.54mm e2 pitch). Pin order is Gate-Drain-Source (flat-face view), identical to common TO-92 MOSFETs like 2N7000, enabling direct PCB footprint reuse without layout changes.
What is the maximum safe operating temperature for VN10LPSTZ?
The absolute maximum junction temperature is +150°C, and storage temperature range is –55°C to +150°C. At 25°C ambient, continuous operation at 270mA requires ≤625mW dissipation; derating begins at ~1.25mW/°C above 25°C based on RθJA = 200°C/W.
Does VN10LPSTZ support logic-level gate drive from 3.3V microcontrollers?
Yes - its gate threshold voltage ranges from 0.8V to 2.5V, ensuring full enhancement with 3.3V logic. However, RDS(ON) increases to 7.5Ω at VGS = 5V (ID = 200mA), so 3.3V drive yields higher conduction loss than 5V or 10V drive.
Why does Diodes state "NOT RECOMMENDED FOR NEW DESIGNS"?
This notice reflects strategic portfolio rationalization - VN10LPSTZ remains fully manufactured and supported for existing designs, but Diodes encourages migration to newer surface-mount alternatives (e.g., DMP2100U) for improved efficiency and density. Lifecycle notifications will precede any discontinuance.
VN10LPSTZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- E-Line-3, Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 625mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- E-Line (TO-92 compatible)
VN10LPSTZ FAQ
1.How can I place an order for VN10LPSTZ through Aetrix?
Please submit a Request for Quotation (RFQ) for VN10LPSTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VN10LPSTZ reliable?
The price and inventory of VN10LPSTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VN10LPSTZ is usually 5 days.
3.What payment methods are accepted for VN10LPSTZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VN10LPSTZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VN10LPSTZ?
VN10LPSTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VN10LPSTZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VN10LPSTZ?
For technical support, including VN10LPSTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VN10LPSTZ requirements.
6.How does Aetrix verify that VN10LPSTZ is sourced from the original manufacturer or authorized distributors?
All VN10LPSTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VN10LPSTZ meets industry standards.
7.What is the process for return or replacement of VN10LPSTZ?
All VN10LPSTZ units undergo pre-shipment inspection (PSI). If there is an issue with VN10LPSTZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VN10LPSTZ part is unused and in its original packaging.
Return procedure for VN10LPSTZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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