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Microchip Technology VN2410L-G-P013
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- Part No.:
- VN2410L-G-P013
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
VN2410L-G-P013.pdf
- Description:
- MOSFET N-CH 240V 190MA TO92-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,687
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Product details
Overview
VN2410L-G-P013 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 240 V drain-to-source breakdown voltage, 10 Ω maximum RDS(ON) at VGS = 10 V / ID = 500 mA, and 1 A continuous drain current - used as a low-threshold switching device in relay drivers and DC power supply circuits.
For engineers reviewing the VN2410L-G-P013 datasheet, VN2410L-G-P013 pinout, VN2410L-G-P013 application, or VN2410L-G-P013 equivalent, key selection criteria include its 0.8–2.0 V gate threshold voltage, integral source-drain diode, thermal stability up to +150°C ambient, and suitability for paralleling in motor control and solenoid drive stages.
Technical Context
This discrete MOSFET uses a vertical DMOS structure with silicon-gate process to combine bipolar-level power handling (240 V BVDSS, 1 A ID) and MOS advantages: high input impedance (>1012 Ω), positive temperature coefficient, and immunity to secondary breakdown. Its 125 pF input capacitance and 8 ns turn-on delay support fast-switching operation in DC-DC converters.
The device features an integral source-drain diode with 1.2 V forward drop at 190 mA, enabling bidirectional current handling in inductive load circuits. Thermal resistance θJA = 132°C/W and operating ambient range of –55°C to +150°C confirm suitability for industrial-grade power switching where thermal runaway must be avoided.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 240 V - Withstands up to 240 V drain-to-source before avalanche conduction; enables use in 120–200 V DC bus applications. |
| RDS(ON) max | 10 Ω at VGS = 10 V / ID = 500 mA - Low on-resistance minimizes conduction loss in low-current switching loads like relays and lamps. |
| VGS(th) | 0.8–2.0 V - Ultra-low threshold allows direct drive from 3.3 V or 5 V logic without level-shifting circuitry. |
| ID(ON) cont. | 1 A - Supports continuous switching of solenoids, small motors, and LED arrays without external heatsinking at TA ≤ 70°C. |
| CISS | 125 pF - Low input capacitance reduces gate drive power and improves switching speed in high-frequency PWM stages. |
| td(ON) | 8 ns - Fast turn-on delay enables efficient operation above 100 kHz in DC-DC converter topologies. |
| θJA | 132°C/W - Junction-to-ambient thermal resistance defines safe power dissipation limit of ~750 mW at TA = 25°C. |
Pinout & Package
Package: 3-lead TO-92 (through-hole, axial lead configuration). Pin numbering follows standard top-view orientation with flat side facing viewer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Reference node for gate drive; connects to ground or low-side return path; carries full load current in low-side switch configuration. |
| 2 | Gate | High-impedance control terminal; requires <200 nA leakage current; driven by microcontroller GPIO or logic buffer. |
| 3 | Drain | High-voltage output node; connects to inductive load (e.g., relay coil) or DC bus; sustains 240 V blocking capability. |
Key Features
| Feature | Design Value |
|---|---|
| Free from secondary breakdown | Enables reliable operation under inductive switching stress without snubber networks or derating. |
| Low CISS and fast switching | 125 pF CISS + 8 ns td(ON) supports >100 kHz PWM in compact power supplies and motor drivers. |
| Integral source-drain diode | 1.2 V VSD at 190 mA provides freewheeling path for inductive loads - eliminates need for external flyback diode. |
| Positive temperature coefficient | RDS(ON) increases 1–1.4%/°C - ensures inherent current sharing when devices are paralleled in high-reliability designs. |
| High input impedance | IGSS ≤ 100 nA at VGS = 20 V - reduces gate drive power consumption and simplifies biasing in battery-powered systems. |
Applications
| Relay Driver Circuit | DC Power Supply Switch |
|---|---|
Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and HVAC controllers. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; operates in saturated on-state with minimal VDS. Use Value: 0.8–2.0 V VGS(th) allows direct interface with 3.3 V MCU outputs; integral diode clamps inductive kickback without external components. |
Use Scenario: High-side or low-side switching in linear-regulated auxiliary supplies for embedded controllers. IC Role / Device Role / Timing Role: Discrete pass element regulating output voltage; operated in linear or switching mode depending on topology. Use Value: 240 V BVDSS supports input ranges up to 170 VDC; 132°C/W θJA permits operation in sealed enclosures up to +70°C ambient. |
| Motor Control Stage | Solenoid Actuation Module |
Use Scenario: Driving small brushed DC motors (≤10 W) in medical pumps and portable tools. IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration; handles PWM frequencies up to 200 kHz. Use Value: 8 ns td(ON) and 24 ns tf minimize switching losses; positive tempco enables stable parallel operation for higher current capability. |
Use Scenario: Controlling pneumatic solenoid valves in industrial automation and irrigation systems. IC Role / Device Role / Timing Role: On/off switch for 24 V solenoid coils with 100–500 mA hold current. Use Value: 1 A ID(ON) rating exceeds typical solenoid surge current; 1.2 V VSD limits freewheeling loss during de-energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V BVDSS, 11 Ω RDS(ON), TO-92 package, but higher VGS(th) (2–4 V) and no integral diode. | Preferred for higher-voltage AC/DC primary-side switching; unsuitable for low-voltage logic drive without gate boosting. | Select STP1NK60ZFP only if >300 V blocking is required and external flyback diode can be added. |
| IRF510PBF | 100 V BVDSS, 5.3 Ω RDS(ON), TO-220 package, VGS(th) 2–4 V, no integral diode. | Better suited for medium-power 24–48 V DC loads; requires PCB space for TO-220 mounting and external diode. | Choose IRF510PBF when higher current (up to 5.6 A) and better thermal performance are needed, and layout allows larger package. |
Compared with STP1NK60ZFP and IRF510PBF, the VN2410L-G-P013 offers unique value in low-threshold, low-power, through-hole switching where integrated diode functionality, compact TO-92 footprint, and 240 V capability converge - making it optimal for space-constrained relay/solenoid driver designs requiring minimal external components.
Availability
VN2410L-G-P013 is available at Aetrix Electronics and suitable for relay drivers, solenoid actuation, and DC power supply switching requiring stable component supply across industrial control, medical instrumentation, and building automation programs.
Supply support for VN2410L-G-P013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power semiconductors, with global design, manufacturing, and support infrastructure.
The VN2410L-G-P013 belongs to Microchip's vertical DMOS FET product line, engineered for robust, low-threshold switching in industrial and automotive-qualified power control applications where reliability under thermal stress and inductive load conditions is critical.
FAQ
What is the gate threshold voltage range for VN2410L-G-P013?
The VN2410L-G-P013 has a gate threshold voltage (VGS(th)) range of 0.8 V to 2.0 V at ID = 1 mA. This ultra-low threshold enables direct drive from 3.3 V or 5 V logic outputs without gate drivers, making the VN2410L-G-P013 ideal for low-power microcontroller-based switching applications such as lamp and relay control.
Does VN2410L-G-P013 include an integrated body diode?
Yes, the VN2410L-G-P013 features an integral source-drain diode with a forward voltage drop (VSD) of 1.2 V at ISD = 190 mA. This built-in diode provides a freewheeling path for inductive loads like relays and solenoids, eliminating the need for an external flyback diode in most low-power switching configurations using the VN2410L-G-P013.
What is the maximum continuous drain current rating for VN2410L-G-P013?
The VN2410L-G-P013 is rated for 1 A continuous drain current (ID(ON)) at VGS = 10 V and VDS = 15 V, with derating above TA = 25°C per its thermal resistance (θJA = 132°C/W). At 70°C ambient, the practical continuous current drops to approximately 650 mA - a key design constraint for sustained operation in enclosed VN2410L-G-P013-based driver circuits.
Can VN2410L-G-P013 be used in parallel configurations?
Yes, the VN2410L-G-P013 is explicitly designed for ease of paralleling due to its positive temperature coefficient of RDS(ON) (1–1.4%/°C), which promotes natural current sharing between devices. This characteristic, combined with low gate charge and matched threshold behavior, makes the VN2410L-G-P013 suitable for higher-current implementations where multiple units share load in motor or solenoid driver stages.
What package type does VN2410L-G-P013 use, and what are its key mechanical features?
VN2410L-G-P013 uses a 3-lead TO-92 package - a through-hole, axial-leaded plastic case with standard pinout (Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain) and Pb-free/RoHS-compliant matte tin plating. Its compact size (4.6 × 3.2 × 4.0 mm) and JEDEC-standard footprint make the VN2410L-G-P013 well-suited for space-limited PCBs in consumer and industrial control modules.
VN2410L-G-P013 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 240 V
- Current - Continuous Drain (Id) @ 25°C:
- 190mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 125 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
VN2410L-G-P013 FAQ
1.How can I place an order for VN2410L-G-P013 through Aetrix?
Please submit a Request for Quotation (RFQ) for VN2410L-G-P013 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VN2410L-G-P013 reliable?
The price and inventory of VN2410L-G-P013 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VN2410L-G-P013 is usually 5 days.
3.What payment methods are accepted for VN2410L-G-P013?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VN2410L-G-P013 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VN2410L-G-P013?
VN2410L-G-P013 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VN2410L-G-P013 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VN2410L-G-P013?
For technical support, including VN2410L-G-P013 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VN2410L-G-P013 requirements.
6.How does Aetrix verify that VN2410L-G-P013 is sourced from the original manufacturer or authorized distributors?
All VN2410L-G-P013 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VN2410L-G-P013 meets industry standards.
7.What is the process for return or replacement of VN2410L-G-P013?
All VN2410L-G-P013 units undergo pre-shipment inspection (PSI). If there is an issue with VN2410L-G-P013, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VN2410L-G-P013 part is unused and in its original packaging.
Return procedure for VN2410L-G-P013:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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