Microchip Technology VN2450N3-G

Overview

VN2450N3-G from Supertex is an N-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for 500 V drain-to-source voltage, 20 Ω max R_DS(ON) at 4.5 V_GS, and 500 mA continuous drain current. It delivers high input impedance, low gate leakage (<100 nA), and fast switching (t_d(ON) ≤ 10 ns) for robust relay and solenoid driving in industrial power control circuits.

For engineers reviewing the VN2450N3-G datasheet, VN2450N3-G pinout, VN2450N3-G application, or VN2450N3-G equivalent, key selection criteria include its 500 V BVDSS rating, thermal stability across −55°C to +150°C, RoHS-compliant TO-92 packaging, and suitability for high-voltage DC switching where secondary breakdown immunity is critical.

Technical Context

This device employs a vertical DMOS structure with silicon-gate process, combining bipolar-level power handling with MOS advantages: positive temperature coefficient of R_DS(ON), inherent freedom from thermal runaway, and no secondary breakdown. Its gate threshold voltage (1.5–4.0 V) enables direct TTL/CMOS logic drive without level shifting.

Designed for high-voltage linear and switching operation, it features low C_ISS (150 pF max) and fast turn-on/turn-off dynamics (t_r/t_f ≤ 10/20 ns), supporting efficient operation in flyback converters and lamp drivers where capacitive loading and switching loss must be minimized.

Key Specifications

Pinout & Package

Supplied in JEDEC-standard 3-lead TO-92 package (N3 variant), lead-forming compliant with RoHS ("Green") requirements. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - verified per Supertex DSFP-VN2450 and DSPD-3TO92N3 package drawings.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel switching applications.

Compared with IXTP50N10P and STP5NK50ZFP, the VN2450N3-G provides optimal fit for space-constrained, medium-power (≤500 mA), high-voltage (≤500 V) switching where TO-92 mounting, low gate drive demand, and secondary breakdown immunity are mandatory design requirements.

Availability

VN2450N3-G is available at Aetrix Electronics and suitable for relay drivers, solenoid controllers, and flyback converter switches requiring stable component supply and long-term industrial lifecycle support.

Supply support for VN2450N3-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Supertex, headquartered in Sunnyvale, CA, specialized in high-voltage analog and power ICs before its acquisition by Microchip Technology in 2014; known for rugged DMOS transistors and LED drivers.

The VN2450N3-G belongs to Supertex's vertical DMOS FET product line, engineered specifically for high-reliability DC switching in industrial controls, medical equipment, and telecom power systems where voltage robustness and thermal stability are non-negotiable.

FAQ

What is the maximum continuous drain current for VN2450N3-G at 25°C ambient?

The VN2450N3-G supports 200 mA continuous drain current (ID) at TA = 25°C in its TO-92 package, limited by thermal resistance θJA = 170°C/W and maximum junction temperature of 150°C. Derating is required above 25°C ambient per the thermal curve in the datasheet, reaching zero derated current at approximately 112°C ambient.

Does VN2450N3-G have an integrated body diode, and what is its forward voltage?

Yes, the VN2450N3-G includes an intrinsic body diode with a forward voltage (VSD) of ≤1.5 V at ISD = 400 mA and VGS = 0 V. This diode enables freewheeling in inductive load applications like relay coils and solenoids, eliminating the need for an external flyback diode in many designs.

Can VN2450N3-G be driven directly by a 3.3 V microcontroller GPIO?

Yes, the VN2450N3-G has a gate threshold voltage (VGS(th)) range of 1.5–4.0 V, making it compatible with 3.3 V logic. At VGS = 3.3 V, it delivers usable on-state current (ID > 100 mA), though RDS(ON) increases versus 10 V drive - verify conduction loss meets your thermal budget using the normalized RDS(ON) vs. temperature curves.

What is the meaning of the '-G' suffix in VN2450N3-G?

The '-G' suffix in VN2450N3-G indicates RoHS-compliant "Green" packaging - lead-free terminations and halogen-free molding compound per EU Directive 2011/65/EU. This designation applies specifically to the TO-92 (N3) variant and confirms compliance without affecting electrical specifications or pinout.

How does VN2450N3-G differ from VN2450N8-G?

The VN2450N3-G uses a TO-92 package while VN2450N8-G uses TO-243AA (SOT-89). Both share identical electrical specs (500 V BVDSS, 13 Ω RDS(ON)), but differ thermally: VN2450N8-G offers higher power dissipation (1.6 W vs. 0.74 W) and lower θJA (78°C/W vs. 170°C/W), enabling higher continuous current in surface-mount layouts with adequate copper area.