Microchip Technology VN2460N3-G-P003

Overview

VN2460N3-G-P003 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 600 V drain-to-source breakdown voltage, 25 Ω maximum R_DS(ON) at V_GS = 10 V, and 250 mA continuous drain current - designed for high-voltage switching in motor controls and power supply circuits.

For engineers reviewing the VN2460N3-G-P003 datasheet, VN2460N3-G-P003 pinout, VN2460N3-G-P003 application, or VN2460N3-G-P003 equivalent, this device offers verified thermal stability, integral source-drain diode functionality, and low gate drive requirements suitable for relay/solenoid drivers and DC-DC converter primary-side switches.

Technical Context

This discrete MOSFET employs a vertical DMOS structure with silicon-gate process to combine bipolar-level power handling (600 V BVDSS) and MOS advantages including high input impedance (>10¹² Ω), positive temperature coefficient, and immunity to secondary breakdown. Its gate threshold voltage (1.5–4.0 V) enables direct TTL/CMOS logic-level drive without external level shifting.

Thermal performance is defined by θ_JA = 132 °C/W in TO-92, supporting 1 W continuous dissipation at 25 °C ambient. The device features low input capacitance (C_ISS = 150 pF) and fast switching (t_d(ON) ≤ 10 ns, t_f ≤ 20 ns), making it suitable for medium-frequency (<100 kHz) hard-switched topologies.

Key Specifications

Pinout & Package

Package: 3-lead TO-92 (N3 variant), Pb-free/RoHS-compliant, through-hole mounting. Thermal resistance θ_JA = 132 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Compared with STP1NK60Z and IXTP01N60UM, the VN2460N3-G-P003 delivers optimal balance of low gate drive demand, TO-92 compatibility, and 600 V ruggedness for cost-sensitive, low-power industrial controls where layout area and driver simplicity are prioritized over ultra-low RDS(ON).

Availability

VN2460N3-G-P003 is available at Aetrix Electronics and suitable for motor controls, power supply circuits, relay drivers, and industrial lamp controls requiring stable component supply and long-term manufacturability.

Supply support for VN2460N3-G-P003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power semiconductors, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.

The VN2460 series belongs to Microchip's vertical DMOS FET product line, engineered for high-voltage switching in industrial, appliance, and automotive auxiliary systems where reliability under thermal stress and voltage transients is critical.

FAQ

What is the maximum continuous drain current rating for VN2460N3-G-P003?

The VN2460N3-G-P003 is rated for 160 mA continuous drain current (ID) at TA = 25°C in its 3-lead TO-92 package, limited by thermal constraints. At elevated ambient temperatures or with PCB copper area enhancements, derating applies per the 132 °C/W θJA specification. Pulse current capability reaches 500 mA.

Does VN2460N3-G-P003 require a gate resistor for safe operation?

Yes - a gate resistor (typically 10–100 Ω) is recommended for VN2460N3-G-P003 to dampen ringing, limit peak gate current during fast transitions, and prevent oscillation due to PCB trace inductance. This is especially critical when driving inductive loads like relays or solenoids where voltage overshoot may occur.

Can VN2460N3-G-P003 be used in a high-side switch configuration?

Yes - VN2460N3-G-P003 can operate as a high-side switch, but requires gate drive voltage ≥ VDS + VGS(th) (i.e., >600 V + 4 V). Since standard logic cannot achieve this, a dedicated high-side gate driver IC or bootstrap circuit is mandatory. For simplicity, it is more commonly deployed as a low-side switch.

Is the body diode in VN2460N3-G-P003 rated for continuous reverse recovery?

The integral source-drain diode in VN2460N3-G-P003 has a forward voltage of 1.5 V at 400 mA and is characterized for unidirectional freewheeling. It is not rated for repetitive reverse recovery (hard commutation); use only in low-frequency (<1 kHz), low-dI/dt applications such as relay coils or lamp loads - not in synchronous rectification.

What is the lead time and minimum order quantity for VN2460N3-G-P003 at Aetrix Electronics?

VN2460N3-G-P003 is stocked in reel format (2000 units/reel) with standard lead time of 2–3 business days for orders placed before 2 PM EST. Minimum order quantity is one reel (2000 pcs); sample quantities (10–100 pcs) are available upon request with 5-day fulfillment.