Microchip Technology VN2460N3-G-P014

Overview

VN2460N3-G-P014 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 600 V drain-to-source breakdown voltage, 25 Ω maximum R_DS(ON) at V_GS = 10 V, and 250 mA continuous drain current - designed for high-voltage switching in motor controls, relay drivers, and power supply circuits.

For engineers reviewing the VN2460N3-G-P014 datasheet, VN2460N3-G-P014 pinout, VN2460N3-G-P014 application, or VN2460N3-G-P014 equivalent, key selection criteria include its 600 V BVDSS rating, low gate threshold (1.5–4 V), integral source-drain diode, thermal stability up to +150°C ambient, and TO-92 package suitability for space-constrained industrial control modules.

Technical Context

This device employs a vertical DMOS structure with silicon-gate process, delivering bipolar-level power handling while retaining MOS advantages: high input impedance, positive temperature coefficient, immunity to thermal runaway, and absence of secondary breakdown. Its gate drive requires only low power due to high gain and low CISS (150 pF).

It operates across –55°C to +150°C ambient, supports fast switching (td(ON) ≤ 10 ns, tf ≤ 20 ns), and integrates a source-drain diode with 1.5 V forward drop at 400 mA - enabling bidirectional current handling in inductive load driving without external flyback protection in many cases.

Key Specifications

Pinout & Package

Package: 3-lead TO-92 (N3), through-hole, Pb-free/RoHS-compliant, marked "VN2460 N3 e3" with year-week traceability code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Compared with STP1NK60Z and IXTP01N60P, the VN2460N3-G-P014 offers verified source-drain diode performance, tighter VGS(th) range (1.5–4 V), and TO-92 thermal resistance optimized for 1 W continuous operation - making it uniquely suited for compact, thermally managed industrial control nodes.

Availability

VN2460N3-G-P014 is available at Aetrix Electronics and suitable for motor controls, relay drivers, and auxiliary power supply circuits requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant through-hole packaging.

Supply support for VN2460N3-G-P014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global provider of microcontroller, mixed-signal, analog, and Flash-IP solutions, serving industrial, automotive, communications, and consumer markets with high-reliability semiconductor products.

The VN2460N3-G-P014 belongs to Microchip's vertical DMOS FET product line, engineered for high-voltage switching applications demanding robustness, thermal stability, and ease of use in industrial control and power conversion systems.

FAQ

What is the maximum continuous drain current rating for VN2460N3-G-P014?

The VN2460N3-G-P014 has a maximum continuous drain current (ID) of 160 mA at TA = 25°C, limited by junction temperature and package thermal resistance (θJA = 132 °C/W). At elevated ambient temperatures or with reduced airflow, derating applies - for example, 80 mA at TA = 75°C. This rating is validated for the 3-lead TO-92 (N3) package variant identified by the P014 ammo pack suffix.

Does VN2460N3-G-P014 include an integrated body diode, and what is its forward voltage?

Yes, the VN2460N3-G-P014 features an integral source-drain diode characterized at 1.5 V forward voltage drop (VSD) with 400 mA forward current and VGS = 0 V. This diode is intrinsic to the vertical DMOS structure and is fully specified in the datasheet - enabling reliable freewheeling in inductive load applications without external components.

Is VN2460N3-G-P014 compatible with 3.3 V logic-level gate drive?

Yes, the VN2460N3-G-P014 has a gate threshold voltage (VGS(th)) range of 1.5 V to 4.0 V, making it fully compatible with 3.3 V logic outputs. At VGS = 3.3 V, the device delivers usable on-state conduction (ID > 10 mA), and at VGS = 4.5 V, RDS(ON) is guaranteed ≤25 Ω - confirming robust turn-on with standard 3.3 V microcontrollers and logic buffers.

What is the absolute maximum drain-to-source voltage rating for VN2460N3-G-P014?

The absolute maximum drain-to-source voltage (BVDSS) for VN2460N3-G-P014 is 600 V, tested at VGS = 0 V and ID = 2 mA. This rating is maintained across the full operating temperature range (–55°C to +150°C), with normalized BVDSS variation less than ±20% over temperature - ensuring consistent high-voltage blocking capability in harsh environments.

How does the thermal performance of VN2460N3-G-P014 compare between TO-92 and SOT-89 packages?

The VN2460N3-G-P014 is only offered in the TO-92 (N3) package; the SOT-89 variant is the distinct part number VN2460N8-G. The TO-92 version has θJA = 132 °C/W, while the SOT-89 version has θJA = 133 °C/W - nearly identical thermal resistance. However, the TO-92 (N3) supports 1 W continuous power dissipation at TA = 25°C, matching the SOT-89's 1.6 W only when mounted on a 25 mm × 25 mm FR5 board per datasheet note.