Toshiba Semiconductor and Storage XPH4R10ANB,L1XHQ

Overview

XPH4R10ANB,L1XHQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-current switching in automotive and industrial power stages. It delivers R_DS(ON) = 3.4 mΩ (typ.) at V_GS = 10 V, supports 70 A DC drain current, and is AEC-Q101 qualified for under-hood motor drivers and DC-DC converters.

For engineers reviewing the XPH4R10ANB,L1XHQ datasheet, XPH4R10ANB,L1XHQ pinout, XPH4R10ANB,L1XHQ application, or XPH4R10ANB,L1XHQ equivalent, key selection criteria include its 100 V V_DSS, low thermal impedance (z_th(ch-c) = 0.88 °C/W), SOP Advance(WF) package with exposed drain pads, and guaranteed single-pulse avalanche energy of 3.0 mJ.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low on-resistance and fast switching with controlled gate charge (Q_g = 75 nC typ.). Its enhancement-mode threshold (V_th = 2.5–3.5 V) enables direct drive from standard 3.3 V/5 V logic controllers without level-shifting.

The device integrates an intrinsic body diode with V_DSF = −1.2 V (typ.) at I_DR = 70 A and supports robust avalanche operation (E_AS = 3.0 mJ, I_AS = 70 A). Thermal design is enabled by its 0.88 °C/W channel-to-case impedance and AEC-Q101 qualification for sustained operation up to T_ch = 175 °C.

Key Specifications

Pinout & Package

Package: SOP Advance(WF), also designated 2-5Q4A - surface-mount, thermally enhanced with exposed drain paddle (pins 5–8), 8-pin leadframe, 0.083 g typical mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP110N10T and STL220N6F7, the XPH4R10ANB,L1XHQ uniquely balances 100 V rating, AEC-Q101 compliance, and ultra-low R_DS(ON) in a thermally optimized surface-mount package-making it optimal for automotive 48 V subsystems requiring both ruggedness and power density.

Availability

XPH4R10ANB,L1XHQ is available at Aetrix Electronics and suitable for automotive HVAC control, industrial 48 V DC-DC conversion, and electric power steering motor drivers requiring stable component supply across multi-year production cycles.

Supply support for XPH4R10ANB,L1XHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and computing applications.

The XPH4R10ANB,L1XHQ belongs to Toshiba's U-MOS-H power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in automotive electrification and next-generation industrial power supplies.

FAQ

What is the maximum continuous drain current rating for XPH4R10ANB,L1XHQ at 25 °C ambient?

The XPH4R10ANB,L1XHQ is rated for 70 A DC drain current at T_c = 25 °C with proper heatsinking. This rating assumes the channel temperature remains ≤175 °C and accounts for the device's 0.88 °C/W channel-to-case thermal impedance. At elevated case temperatures, derating is required per the PD–Tc curve in Figure 8.16 of the official datasheet.

Is XPH4R10ANB,L1XHQ suitable for use in automotive infotainment power supplies?

Yes, XPH4R10ANB,L1XHQ is AEC-Q101 qualified and rated for T_stg = −55 to 175 °C, making it suitable for automotive infotainment power supplies where thermal cycling and long-term reliability are critical. Its low R_DS(ON) and fast switching characteristics support high-efficiency synchronous buck regulators in head unit and display power rails.

Does XPH4R10ANB,L1XHQ have integrated ESD protection on the gate terminal?

No, XPH4R10ANB,L1XHQ does not include integrated gate ESD protection. The datasheet explicitly states "This transistor is sensitive to electrostatic discharge and should be handled with care." Designers must implement external gate protection-such as a 10 kΩ series resistor and 12 V Zener clamp-to prevent damage during assembly and operation.

What is the gate threshold voltage range for XPH4R10ANB,L1XHQ, and how does it affect drive circuit selection?

The gate threshold voltage V_th for XPH4R10ANB,L1XHQ is specified as 2.5–3.5 V at V_DS = 10 V and I_D = 1.0 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while avoiding unintended conduction due to noise. Drive circuits must deliver ≥10 V to fully enhance the device and achieve its rated R_DS(ON).

Can XPH4R10ANB,L1XHQ be used as a synchronous rectifier in a 100 V output DC-DC converter?

No-XPH4R10ANB,L1XHQ has a 100 V V_DSS rating, which provides no safety margin for 100 V output applications subject to line transients or ringing. For synchronous rectification in such topologies, a device with ≥150 V rating (e.g., 150 V or 200 V V_DSS) is required. XPH4R10ANB,L1XHQ is appropriate for 48 V or 60 V bus systems with adequate voltage headroom.