Toshiba Semiconductor and Storage XPN12006NC,L1XHQ

Overview

XPN12006NC from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel MOSFET in the U-MOS-H process, designed for high-efficiency switching in automotive and industrial power stages. It delivers 9.8 mΩ R_DS(ON) at V_GS = 10 V, supports 20 A DC drain current, and is AEC-Q101 qualified for under-hood applications including DC-DC converters and motor drivers.

For engineers reviewing the XPN12006NC datasheet, XPN12006NC pinout, XPN12006NC application, or XPN12006NC equivalent, key selection criteria include its TSON Advance(WF) package thermal performance (z_th(ch-c) = 2.3 °C/W), low gate charge (Q_g = 23 nC typ.), and guaranteed avalanche energy rating (E_AS = 2.27 mJ).

Technical Context

The XPN12006NC employs Toshiba's U-MOS-H trench-gate structure to achieve low on-resistance and fast switching with minimal gate charge. Its enhancement-mode operation (V_th = 1.5–2.5 V) enables direct drive from standard 3.3 V/5 V logic controllers without level-shifting.

Designed for high-reliability automotive use, it features AEC-Q101 qualification, 175 °C channel temperature rating, and robust avalanche capability (IAS = 41 A, EAS = 2.27 mJ). The device integrates an intrinsic body diode with V_DSF = −1.2 V at 20 A, supporting synchronous rectification and freewheeling in half-bridge topologies.

Key Specifications

Pinout & Package

Package: TSON Advance(WF), also designated 2-3X2A - ultra-thin, leadless surface-mount package (3.0 × 2.0 × 0.85 mm, 0.026 g) optimized for automated assembly and thermal performance on FR-4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with STL220N6F7 and DMTH6006LPSQ, the XPN12006NC offers optimal balance of compact size (3×2 mm²), 20 A DC capability, and 23 nC gate charge-making it uniquely suited for space-constrained, high-frequency automotive power stages where thermal management and drive simplicity are critical.

Availability

XPN12006NC is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and brushless DC motor drivers requiring stable component supply across extended product lifecycles.

Supply support for XPN12006NC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and consumer reliability.

The XPN12006NC belongs to Toshiba's U-MOS-H automotive-qualified MOSFET family, engineered specifically for high-efficiency, high-reliability switching in engine bay and chassis-mounted electronics.

FAQ

What is the maximum continuous drain current rating for the XPN12006NC?

The XPN12006NC is rated for 20 A DC drain current at T_c = 25 °C. This rating assumes proper PCB thermal design with adequate copper area and airflow. At elevated case temperatures, derating applies per the PD–Tc curve in Figure 8.16; for example, at T_c = 100 °C, the usable DC current drops to approximately 12 A. Always verify thermal performance in the final application using the guaranteed z_th(ch-c) = 2.3 °C/W value.

Is the XPN12006NC suitable for use in AEC-Q101-compliant automotive systems?

Yes, the XPN12006NC is fully AEC-Q101 qualified per Rev. 6.0 of the datasheet. It has passed stress tests including high-temperature reverse bias (HTRB), temperature cycling, and unclamped inductive switching (UIS), confirming suitability for automotive powertrain, body, and chassis applications. Its 175 °C channel temperature rating and guaranteed avalanche energy further validate its robustness in harsh automotive environments.

What is the gate threshold voltage range for the XPN12006NC, and how does it affect drive circuit design?

The XPN12006NC has a gate threshold voltage (V_th) range of 1.5 to 2.5 V at V_DS = 10 V and I_D = 0.2 mA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while avoiding unintended conduction during power-up or noise transients. For full enhancement, V_GS ≥ 10 V is recommended to achieve the specified 9.8 mΩ R_DS(ON); operation at 4.5 V yields higher on-resistance (23.7 mΩ max).

Does the XPN12006NC include an integrated body diode, and what are its characteristics?

Yes, the XPN12006NC incorporates an intrinsic body diode with a forward voltage (V_DSF) of −1.2 V at I_DR = 20 A and V_GS = 0 V. This diode supports freewheeling current in inductive loads and enables synchronous rectification when used in half-bridge configurations. Its reverse recovery behavior is characterized in the datasheet, and designers should account for its Q_rr in high-frequency switching layouts to avoid cross-conduction losses.

What is the thermal resistance from channel to case (z_th(ch-c)) for the XPN12006NC, and how is it measured?

The XPN12006NC has a guaranteed maximum channel-to-case thermal impedance (z_th(ch-c)) of 2.3 °C/W, measured under transient conditions (t = 10 s) per JEDEC JESD51-14. This value reflects heat flow from the silicon die through the package substrate to the soldered thermal pad on the PCB. It is independent of board layout and enables accurate junction temperature estimation using T_j = T_c + (P_diss × z_th(ch-c)), provided the case temperature is measured at the center of the exposed source pad.