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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage XPN3R804NC,L1XHQ

Name: XPN3R804NC,L1XHQ
Brand: Toshiba Semiconductor and Storage
SKU: XPN3R804NC,L1XHQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: XPN3R804NC,L1XHQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: XPN3R804NC,L1XHQ.pdf

Description:: MOSFET N-CH 40V 40A 8TSON

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Product details

Overview

XPN3R804NC from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS power MOSFET designed for high-efficiency switching in automotive and industrial power stages. It delivers 40 V V_DSS, 3.0 mΩ R_DS(ON) (typ., V_GS = 10 V), 40 A continuous drain current, and AEC-Q101 qualification - enabling use in DC-DC converters, motor drivers, and voltage regulators where low conduction loss and thermal robustness are critical.

For engineers reviewing the XPN3R804NC datasheet, XPN3R804NC pinout, XPN3R804NC application, or XPN3R804NC equivalent, key selection considerations include its TSON Advance(WF) package with dual-side cooling capability, guaranteed single-pulse avalanche energy of 2.27 mJ, and gate threshold voltage range of 1.5–2.5 V under automotive-grade reliability constraints.

Technical Context

This MOSFET employs Toshiba's U-MOS trench-gate structure to achieve ultra-low on-resistance while maintaining fast switching performance: C_iss = 2230 pF, Q_g = 35 nC (V_DD ≈ 32 V, I_D = 40 A), and t_r/t_f = 17/17 ns. Its enhancement-mode operation and 1.5–2.5 V V_th ensure reliable gate drive compatibility with standard 3.3 V and 5 V logic controllers.

Thermally, it features a channel-to-case impedance of 1.5 °C/W and supports operation up to 175 °C channel temperature. The TSON Advance(WF) package enables high-power density mounting on compact PCBs with exposed drain pads for direct thermal coupling to heatsinks or copper planes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 24 V automotive systems and 36 V industrial rails
R_DS(ON)	3.0 mΩ (typ., V_GS = 10 V) - Enables <1.2 W conduction loss at 20 A, reducing thermal stress in high-current paths
I_D (DC)	40 A - Supports continuous output currents in compact buck converters and half-bridge motor phases
E_AS	2.27 mJ - Specifies single-pulse avalanche ruggedness for inductive load switching without external snubbers
V_th	1.5–2.5 V - Ensures turn-on with standard logic-level gate drivers and stable operation across temperature
z_th(ch-c)	1.5 °C/W - Allows efficient heat transfer from die to PCB copper or heatsink, critical for sustained 40 A operation
C_iss	2230 pF - Determines gate drive power requirement and influences switching speed when paired with 4.7 Ω gate resistor

Pinout & Package

Package: TSON Advance(WF), also designated 2-3X2A - 3.0 × 2.0 mm footprint with 0.45 mm height, thermally enhanced via exposed drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel cells; tied to PCB ground plane for low-inductance return path
4	Gate	Control terminal requiring ≤±20 V rating; sensitive to ESD - must be protected during handling and layout
5, 6, 7, 8	Drain	High-current output node connected to exposed copper pad; primary thermal and power path to PCB

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and TC
Ultra-low R_DS(ON)	3.0 mΩ typ. at 10 V gate drive reduces I²R losses by >30% vs. comparable 5 mΩ MOSFETs in 20 A DC-DC stages
TSON Advance(WF) package	Enables dual-side cooling: top-side gate access + bottom-side drain thermal pad for <2.0 °C/W system-level thermal resistance
Low gate charge	Q_g = 35 nC ensures fast switching with minimal driver power dissipation in high-frequency (>500 kHz) SMPS designs
Enhancement-mode V_th	1.5–2.5 V range guarantees safe off-state at 0 V gate bias and clean turn-on with 3.3 V microcontroller outputs

Applications

Automotive DC-DC Converters	Industrial Motor Drivers
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 300–500 kHz. Use Value: 3.0 mΩ R_DS(ON) minimizes conduction loss at 30 A average current, improving efficiency by ≥1.2% over 4.5 mΩ alternatives.	Use Scenario: Half-bridge phase leg in 24 V BLDC motor control for HVAC actuators and power seats. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (t_f = 17 ns) to support precise PWM dead-time control. Use Value: AEC-Q101 qualification ensures long-term reliability under automotive thermal cycling (−40 °C to 150 °C ambient).
Server VRMs	Renewable Energy Inverters
Use Scenario: Point-of-load regulator supplying core voltage to AI accelerators in data center servers. IC Role / Device Role / Timing Role: Synchronous FET in 40 A, 500 kHz buck stage with tight thermal constraints. Use Value: 1.5 °C/W z_th(ch-c) allows direct mounting to copper-filled thermal vias, limiting junction rise to <35 °C above board temperature.	Use Scenario: High-side switch in MPPT charge controller for 24 V solar battery banks. IC Role / Device Role / Timing Role: Switching element in non-isolated buck-boost topology handling intermittent 40 A surge currents. Use Value: 2.27 mJ E_AS withstands inductive kickback from panel wiring without clamping diodes or layout redesign.

Automotive DC-DC Converters

Industrial Motor Drivers

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 300–500 kHz.

Use Value: 3.0 mΩ R_DS(ON) minimizes conduction loss at 30 A average current, improving efficiency by ≥1.2% over 4.5 mΩ alternatives.

Use Scenario: Half-bridge phase leg in 24 V BLDC motor control for HVAC actuators and power seats.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (t_f = 17 ns) to support precise PWM dead-time control.

Use Value: AEC-Q101 qualification ensures long-term reliability under automotive thermal cycling (−40 °C to 150 °C ambient).

Server VRMs

Renewable Energy Inverters

Use Scenario: Point-of-load regulator supplying core voltage to AI accelerators in data center servers.

IC Role / Device Role / Timing Role: Synchronous FET in 40 A, 500 kHz buck stage with tight thermal constraints.

Use Value: 1.5 °C/W z_th(ch-c) allows direct mounting to copper-filled thermal vias, limiting junction rise to <35 °C above board temperature.

Use Scenario: High-side switch in MPPT charge controller for 24 V solar battery banks.

IC Role / Device Role / Timing Role: Switching element in non-isolated buck-boost topology handling intermittent 40 A surge currents.

Use Value: 2.27 mJ E_AS withstands inductive kickback from panel wiring without clamping diodes or layout redesign.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4 mΩ (V_GS = 10 V); PQFN 3.3 × 3.3 mm; higher gate charge (Q_g = 49 nC)	Higher efficiency at <15 A but larger footprint and greater gate drive demand	Select when lowest conduction loss dominates and board space permits larger package
ON Semiconductor NTMFS4C09NT1G	R_DS(ON) = 3.6 mΩ (V_GS = 10 V); SO-8FL; lower avalanche rating (E_AS = 1.4 mJ)	Compatible pinout for legacy SO-8 layouts but reduced ruggedness in inductive switching	Choose for drop-in replacement in existing SO-8 designs where avalanche margin is not critical

Compared with BSC014N04LS6 and NTMFS4C09NT1G, the XPN3R804NC offers optimal balance of ultra-low R_DS(ON), compact 3.0 × 2.0 mm footprint, AEC-Q101 validation, and 2.27 mJ avalanche energy - making it preferred for space-constrained, thermally demanding automotive and industrial switching applications.

Availability

XPN3R804NC is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drivers, and server VRMs requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for XPN3R804NC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on automotive, industrial, and computing markets.

The XPN3R804NC belongs to Toshiba's U-MOS series of trench-gate N-channel MOSFETs engineered specifically for high-efficiency, high-reliability power conversion in automotive-grade environments.

FAQ

What is the maximum continuous drain current rating for XPN3R804NC?

The XPN3R804NC has a rated continuous drain current (I_D) of 40 A at T_c = 25 °C. This rating assumes proper PCB thermal design with the TSON Advance(WF) package mounted on sufficient copper area. At elevated case temperatures, derating applies per the PD–T_c curve in Figure 8.16 of the official datasheet.

Is XPN3R804NC suitable for automotive applications?

Yes, the XPN3R804NC is AEC-Q101 qualified and explicitly listed for automotive use in switching voltage regulators, DC-DC converters, and motor drivers. Its construction, testing, and thermal specifications meet automotive reliability standards, including operation from −40 °C to +175 °C channel temperature.

What is the gate threshold voltage range of XPN3R804NC?

The XPN3R804NC has a gate threshold voltage (V_th) range of 1.5 V to 2.5 V, measured at V_DS = 10 V and I_D = 0.3 mA. This range ensures reliable turn-on with standard 3.3 V logic-level drivers while maintaining adequate noise margin in noisy automotive environments.

Does XPN3R804NC include an integrated body diode?

Yes, the XPN3R804NC incorporates a parasitic body diode with V_DSF = −1.2 V (typ.) at I_DR = 40 A and V_GS = 0 V. This diode supports freewheeling current in synchronous rectification and H-bridge configurations, though its reverse recovery characteristics are not optimized for high-frequency ZVS operation.

What is the thermal resistance from channel to case for XPN3R804NC?

The XPN3R804NC has a maximum channel-to-case thermal impedance (z_th(ch-c)) of 1.5 °C/W under pulsed conditions (t = 10 s). This value reflects the device's ability to transfer heat directly from the silicon die to the PCB copper or heatsink through the exposed drain pad in the TSON Advance(WF) package.

XPN3R804NC,L1XHQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2230 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 840mW (Ta), 100W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSON Advance-WF (3.1x3.1)

XPN3R804NC,L1XHQ FAQ

1.How can I place an order for XPN3R804NC,L1XHQ through Aetrix?

Please submit a Request for Quotation (RFQ) for XPN3R804NC,L1XHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for XPN3R804NC,L1XHQ reliable?

The price and inventory of XPN3R804NC,L1XHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for XPN3R804NC,L1XHQ is usually 5 days.

3.What payment methods are accepted for XPN3R804NC,L1XHQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for XPN3R804NC,L1XHQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for XPN3R804NC,L1XHQ?

XPN3R804NC,L1XHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your XPN3R804NC,L1XHQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for XPN3R804NC,L1XHQ?

For technical support, including XPN3R804NC,L1XHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your XPN3R804NC,L1XHQ requirements.

6.How does Aetrix verify that XPN3R804NC,L1XHQ is sourced from the original manufacturer or authorized distributors?

All XPN3R804NC,L1XHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that XPN3R804NC,L1XHQ meets industry standards.

7.What is the process for return or replacement of XPN3R804NC,L1XHQ?

All XPN3R804NC,L1XHQ units undergo pre-shipment inspection (PSI). If there is an issue with XPN3R804NC,L1XHQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The XPN3R804NC,L1XHQ part is unused and in its original packaging.

Return procedure for XPN3R804NC,L1XHQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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