Toshiba Semiconductor and Storage XPQ1R004PB,LXHQ

Overview

XPQ1R004PB from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in the U-MOS-H process, designed for high-current automotive switching applications. It delivers R_DS(ON) = 0.8 mΩ (typ.) at V_GS = 10 V, supports 200 A DC drain current, and features a 40 V drain-source voltage rating with low leakage (I_DSS ≤ 10 µA at V_DS = 40 V). It is used in 48 V automotive DC-DC converters requiring high efficiency and thermal robustness.

For engineers reviewing the XPQ1R004PB datasheet, XPQ1R004PB pinout, XPQ1R004PB application, or XPQ1R004PB equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low on-resistance, single-pulse avalanche energy of 208 mJ, channel-to-case thermal impedance of 0.65 °C/W, and L-TOGLTM package with integrated heatsink terminal.

Technical Context

The XPQ1R004PB employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and high current density while maintaining fast switching performance. Its enhancement-mode gate threshold (V_th = 2.0–3.0 V) enables compatibility with standard 10 V gate drivers, and its 100 A single-pulse avalanche current rating supports rugged operation under transient overvoltage conditions in motor drive and converter topologies.

Thermally, the device uses a copper-clad L-TOGLTM package with Drain connected to the heatsink (Pin 9), enabling direct mounting to chassis or heatsinks. The 0.65 °C/W channel-to-case thermal impedance allows sustained 200 A conduction when properly heatsinked, and its 175 °C maximum channel temperature aligns with AEC-Q101 stress test requirements for automotive under-hood environments.

Key Specifications

Pinout & Package

L-TOGLTM is a proprietary copper-clip package from Toshiba, featuring exposed drain (heatsink) on the bottom and top-side terminals. It provides low-inductance, high-current interconnects and superior thermal transfer via Pin 9 (Drain/Heatsink).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IXTN200N04S5 and STL220N4LF8AG, the XPQ1R004PB uniquely combines AEC-Q101 qualification, 0.8 mΩ on-resistance, and 0.65 °C/W thermal impedance-enabling higher power density and automotive-grade reliability in thermally demanding 48 V systems without parallel devices.

Availability

XPQ1R004PB is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering motor drives, and 48 V telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for XPQ1R004PB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global automotive and industrial design-in leadership.

The XPQ1R004PB belongs to Toshiba's U-MOS-H automotive power MOSFET family, engineered specifically for high-current, high-reliability 48 V automotive subsystems including mild-hybrid converters and EPS inverters.

FAQ

What is the gate threshold voltage range for XPQ1R004PB?

The XPQ1R004PB has a gate threshold voltage (V_th) range of 2.0 V to 3.0 V, measured at V_DS = 10 V and I_D = 0.5 mA. This ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs and avoids unintended conduction near ground potential. The XPQ1R004PB's V_th grouping can be customized per reel (0.4 V width) upon request, though standard reels use 1.0 V width without marking.

Is XPQ1R004PB suitable for synchronous rectification in LLC resonant converters?

Yes, the XPQ1R004PB supports synchronous rectification in LLC converters due to its low forward voltage (V_DSF = −1.2 V typ.) and moderate reverse recovery charge (Q_rr = 136 nC). Its 0.8 mΩ R_DS(ON) minimizes conduction loss during high-current on-state, and its 100 A pulsed rating handles peak rectifier currents. The XPQ1R004PB's body diode characteristics are validated for ZVS operation in 200–500 kHz designs.

Does XPQ1R004PB require a heatsink for 200 A DC operation?

Yes, the XPQ1R004PB requires direct mechanical and thermal attachment of Pin 9 (Drain/Heatsink) to an external heatsink to sustain 200 A DC current. With its 0.65 °C/W channel-to-case thermal impedance, junction temperature remains within the 175 °C limit only when case temperature is held ≤ 85 °C. The XPQ1R004PB's L-TOGLTM package is designed for bolt-down or soldered heatsink integration-not PCB-only thermal relief.

What is the single-pulse avalanche energy rating of XPQ1R004PB?

The XPQ1R004PB is rated for 208 mJ of single-pulse avalanche energy (E_AS) under standardized test conditions (V_DD ≈ 32 V, T_ch = 25 °C, L = 16 µH, R_G = 25 Ω, I_AS = 100 A). This rating enables robust operation during inductive switching transients in motor drives and DC-DC converters without external snubbers. The XPQ1R004PB's guaranteed E_AS curve is provided in Fig. 8.15 of its datasheet.

How does XPQ1R004PB differ from standard TO-263 MOSFETs in thermal performance?

The XPQ1R004PB's L-TOGLTM package delivers 0.65 °C/W channel-to-case thermal impedance-over 2× better than typical TO-263 (1.4–1.8 °C/W). This is achieved via copper-clip construction and direct-drain heatsink contact (Pin 9), eliminating bond-wire thermal bottlenecks. For identical 200 A operation, the XPQ1R004PB reduces junction-to-heatsink temperature rise by ~75 °C versus TO-263 equivalents. The XPQ1R004PB thus enables higher power density in automotive modules where thermal headroom is constrained.