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Diodes Incorporated ZDM4206NTA
- Part No.:
- ZDM4206NTA
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-223-8
- Datasheet:
-
ZDM4206NTA.pdf
- Description:
- MOSFET 2N-CH 60V 1A SM8
- Quantity:
- Payment:
- Shipping:
Inventory:6,696
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Product details
Overview
ZDM4206NTA from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SM-8 (SOT-223-8) package, rated for 60 V VDS, 1 A continuous drain current per channel, and 15 mJ repetitive avalanche energy. It integrates two matched die for synchronous buck, half-bridge, or load-switch applications in space-constrained DC-DC converters.
For engineers reviewing the ZDM4206NTA datasheet, ZDM4206NTA pinout, ZDM4206NTA application, or ZDM4206NTA equivalent, key selection criteria include its dual-die thermal coupling behavior, 1.0–1.5 Ω RDS(on) at VGS = 10 V, avalanche ruggedness, and SOT-223-8 footprint compatibility with high-current PCB layouts.
Technical Context
This device implements two independent N-channel silicon MOSFETs on a single die substrate within an SM-8 thermally enhanced leadframe. Each channel supports 60 V blocking and operates with gate threshold voltage between 1.3 V and 3.0 V, enabling direct drive from 3.3 V or 5 V logic controllers.
Its 15 mJ repetitive avalanche rating and 600 mA IAR allow safe operation under inductive switching stress without external snubbers. Thermal resistance of 45.5 °C/W (both die on) reflects optimized copper pad layout requirements for sustained 1 A per channel conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source voltage before breakdown; defines use in ≤48 V bus systems with margin. |
| RDS(on) | 1.0–1.5 Ω - On-resistance at VGS = 10 V and ID = 1.5 A; determines conduction loss in high-side/low-side switching paths. |
| ID (continuous) | 1 A per channel - Continuous current rating at Tamb = 25 °C; derates linearly above 25 °C per 22 mW/°C (both channels active). |
| EAR | 15 mJ - Repetitive avalanche energy per pulse; enables robustness against inductive kickback in motor gate drivers or solenoid controls. |
| Ciss | 100 pF - Input capacitance at VDS = 25 V; impacts gate drive strength requirement and switching speed in PWM circuits. |
| td(on)/tf | 8 ns / 15 ns - Turn-on delay and fall time with 50 Ω source; supports >1 MHz switching in compact power stages. |
Pinout & Package
Package: SM-8 (8-lead SOT-223 variant), thermally optimized with exposed drain pads for both channels. Mounting requires ≥2 inch² copper area per channel for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-current output node; internally bonded to exposed copper pad 1 for thermal conduction. |
| G1 | Gate of Channel 1 | Control input; threshold 1.3–3.0 V; requires <100 nA leakage handling in low-power logic interfaces. |
| S1 | Source of Channel 1 | Reference node for Channel 1; electrically isolated from S2 unless externally tied. |
| D2 | Drain of Channel 2 | Independent high-current output; shares thermal mass but not electrical path with D1. |
| G2 | Gate of Channel 2 | Separate control input; matched VGS(th) and RDS(on) to G1 per datasheet characterization. |
| S2 | Source of Channel 2 | Reference node for Channel 2; enables floating or common-source configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched MOSFETs in one SM-8 package reduce board area by ~40% vs discrete SOT-23 pairs in half-bridge layouts. |
| Avalanche-rated structure | 15 mJ EAR and 600 mA IAR allow unclamped inductive switching without external protection components. |
| Thermally enhanced leadframe | 45.5 °C/W RθJA (both channels on) enables 1 A/channel operation with standard 2-inch² PCB copper. |
| Low gate charge profile | Ciss = 100 pF and Crss = 20 pF minimize Miller effect, supporting clean 10 V gate drive from microcontroller GPIO. |
Applications
| DC-DC Synchronous Buck Converter | Industrial Load Switch |
|---|---|
Use Scenario: 12 V input to 3.3 V/1 A output in programmable logic controller I/O modules. IC Role / Device Role: High-side and low-side switch pair controlling inductor current flow and freewheeling path. Use Value: Dual-channel matching ensures balanced duty cycle and reduced shoot-through risk; 1.5 Ω RDS(on) limits conduction loss to <1.5 W total at full load. | Use Scenario: Controlled 24 V power enable for fieldbus interface circuitry with surge immunity. IC Role / Device Role: Back-to-back configured N-MOSFETs providing bidirectional blocking and controlled turn-on. Use Value: 60 V rating accommodates 24 V + transients; avalanche energy rating eliminates need for TVS clamping on load side. |
| Brushed DC Motor Driver | Hot-Swap Controller |
Use Scenario: H-bridge driver for 24 V, 500 mA brushed motor in HVAC damper actuator. IC Role / Device Role: Two channels used as half-bridge legs; body diodes provide freewheeling during PWM off-time. Use Value: Matched RDS(on) minimizes torque ripple; 15 mJ EAR withstands motor inductance flyback without snubber networks. | Use Scenario: Inrush-limited 12 V supply insertion into live backplane in network switch line cards. IC Role / Device Role: Single channel used as series pass element with gate driven via RC+ comparator for soft-start. Use Value: 1 A continuous rating supports 10 W hot-swap loads; low VGS(th) enables simple 3.3 V control interface. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | 30 V VDS, 3.7 A ID, SO-8 package, lower RDS(on) (29 mΩ), no avalanche rating | Not suitable for 48 V systems or inductive switching; better for high-current, low-voltage logic-level loads | Select when bus voltage ≤24 V and avalanche stress is absent |
| SI6926ADQ-T1-GE3 | 60 V VDS, 2.5 A ID, PowerPAK® SO-8, RDS(on) = 0.125 Ω, no specified EAR | Higher current capability but uncharacterized avalanche performance; thermal resistance higher (62 °C/W) | Prefer for higher efficiency at >500 mA but verify system-level avalanche margin independently |
Compared with DMN3029LSD-13 and SI6926ADQ-T1-GE3, ZDM4206NTA uniquely balances 60 V rating, documented 15 mJ avalanche robustness, and SM-8 thermal performance-making it optimal for space-limited 24–48 V industrial power stages where reliability under transient stress is critical.
Availability
ZDM4206NTA is available at Aetrix Electronics and suitable for DC-DC converters, industrial load switches, brushed motor drivers, and hot-swap controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for ZDM4206NTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and consumer markets.
ZDM4206NTA belongs to Diodes' Zetex high-voltage MOSFET product line, engineered specifically for ruggedized, thermally efficient dual-channel switching in compact industrial power supplies and motor control modules.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The ZDM4206NTA has a maximum junction temperature of +150 °C. Operation at this limit requires strict adherence to thermal design guidelines-including 2 inch² copper per channel-and derating of current above 25 °C ambient per the 22 mW/°C slope for dual-channel use. Exceeding Tj(max) risks parametric shift and long-term reliability degradation.
Can the two channels be paralleled to increase current capacity?
No-ZDM4206NTA channels are not designed for paralleling. They share a common thermal substrate but have independent gate and source terminals with no internal current-sharing mechanism. Paralleling would cause thermal runaway due to mismatched RDS(on) drift with temperature; use a single higher-current MOSFET instead.
Is the body diode suitable for continuous freewheeling conduction?
Yes-the integrated body diode supports up to 1 A continuous forward current at 25 °C ambient, with VSD ≈ 1.2 V at 1 A. However, its reverse recovery characteristics are not specified; avoid use in high-frequency synchronous rectification unless validated with oscilloscope-based switching waveform analysis.
Does ZDM4206NTA require gate resistors for EMI control in 500 kHz PWM applications?
Yes-a 10–22 Ω gate resistor is recommended to damp ringing caused by trace inductance interacting with Ciss (100 pF) and Crss (20 pF). Without damping, fast edges (tr/tf < 15 ns) can excite parasitic LC resonances, increasing radiated emissions and causing false triggering in adjacent logic circuits.
ZDM4206NTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-223-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 1A
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 100pF @ 25V
- Power - Max:
- 2.75W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM8
ZDM4206NTA FAQ
1.How can I place an order for ZDM4206NTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZDM4206NTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZDM4206NTA reliable?
The price and inventory of ZDM4206NTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDM4206NTA is usually 5 days.
3.What payment methods are accepted for ZDM4206NTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDM4206NTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZDM4206NTA?
ZDM4206NTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZDM4206NTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZDM4206NTA?
For technical support, including ZDM4206NTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDM4206NTA requirements.
6.How does Aetrix verify that ZDM4206NTA is sourced from the original manufacturer or authorized distributors?
All ZDM4206NTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDM4206NTA meets industry standards.
7.What is the process for return or replacement of ZDM4206NTA?
All ZDM4206NTA units undergo pre-shipment inspection (PSI). If there is an issue with ZDM4206NTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZDM4206NTA part is unused and in its original packaging.
Return procedure for ZDM4206NTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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