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Diodes Incorporated ZDM4206NTC
- Part No.:
- ZDM4206NTC
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-223-8
- Datasheet:
-
ZDM4206NTC.pdf
- Description:
- MOSFET 2N-CH 60V 1A SM8
- Quantity:
- Payment:
- Shipping:
Inventory:6,347
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Product details
Overview
ZDM4206NTC from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SM-8 (SOT-223-8) package, rated for 60 V VDS, 1 A continuous drain current per channel, and avalanche energy of 15 mJ. It integrates two independent silicon die with matched RDS(on) (1.0–1.5 Ω @ VGS = 10 V), enabling compact dual-switch topologies in DC-DC converters and load switching circuits.
For engineers reviewing the ZDM4206NTC datasheet, ZDM4206NTC pinout, ZDM4206NTC application, or ZDM4206NTC equivalent, key selection criteria include per-channel RDS(on) matching, avalanche ruggedness, thermal derating behavior in dual-die configuration, and gate threshold voltage consistency across temperature.
Technical Context
This dual MOSFET operates in enhancement mode with gate threshold voltage ranging 1.3–3.0 V at ID = 1 mA, supporting TTL- and CMOS-level drive. Each channel exhibits typical input capacitance (Ciss) of 100 pF and output capacitance (Coss) of 60 pF at VDS = 25 V, enabling fast switching with td(on) = 8 ns and tf = 15 ns under standard test conditions.
The device features integrated body diodes with 1 A continuous forward current rating per channel and is rated for repetitive avalanche operation up to IAR = 600 mA and EAR = 15 mJ. Thermal resistance from junction-to-ambient is 45.5 °C/W when both dies are active on a 2-inch² copper PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage per channel; supports 48 V rail systems with margin. |
| RDS(on) | 1.0–1.5 Ω @ VGS = 10 V - Low conduction loss per channel at nominal gate drive; enables <1.5 W dissipation at 1 A. |
| ID (cont) | 1 A per channel at Tamb = 25 °C - Continuous current rating per die; derates linearly above 25 °C. |
| EAR | 15 mJ - Repetitive avalanche energy per channel; ensures robustness against inductive switching transients. |
| Ciss | 100 pF - Input capacitance per channel; determines gate drive strength requirement and switching speed. |
| tf | 15 ns - Fall time with 50 Ω source impedance; enables >1 MHz switching in hard-switched topologies. |
| Tj range | −55 to +150 °C - Full industrial operating junction temperature range; validated for automotive under-hood ambient. |
Pinout & Package
Package: SM-8 (8-lead SOT-223 variant), surface-mount, thermally enhanced with exposed drain pads for each channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to external heat sink via exposed pad. |
| S1 | Source of Channel 1 | Reference node for Gate 1; forms return path for Channel 1 current; tied to ground or floating node per topology. |
| G1 | Gate of Channel 1 | Control terminal for Channel 1; requires ≥1.3 V to turn on; driven by dedicated gate driver or microcontroller GPIO. |
| D2 | Drain of Channel 2 | Independent high-side/low-side node; not internally connected to D1; enables dual-phase or redundant switching. |
| S2 | Source of Channel 2 | Reference node for Gate 2; separate from S1; allows independent biasing and current sensing per channel. |
| G2 | Gate of Channel 2 | Control terminal for Channel 2; identical threshold and capacitance to G1; supports synchronous or interleaved drive. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | 15 mJ repetitive avalanche energy per channel - eliminates need for external snubbers in flyback or buck-boost converters. |
| Dual independent die | Electrically isolated channels with matched RDS(on) and VGS(th) - enables phase interleaving and redundancy without cross-talk. |
| Thermally optimized SM-8 | 45.5 °C/W RθJA (both channels active) - superior to discrete SOT-223 devices due to shared thermal mass and dual exposed pads. |
| Low gate charge profile | Ciss = 100 pF, Crss = 20 pF - reduces gate drive power and improves EMI performance in high-frequency switching. |
Applications
| DC-DC Synchronous Buck Converter | Redundant Load Switch |
|---|---|
Use Scenario: 12 V input to 3.3 V/2 A output in industrial PLC I/O module. IC Role / Device Role: High-side and low-side power switches in single-phase synchronous rectification stage. Use Value: Dual-channel integration reduces board area by 35% vs. discrete SOT-23 MOSFETs; matched RDS(on) minimizes current imbalance. |
Use Scenario: Power management for dual-redundant sensor interface in railway signaling equipment. IC Role / Device Role: Independent channel control enables hot-swappable load isolation and fault containment. Use Value: Avalanche rating ensures survival during sudden load disconnect transients; separate S1/S2 pins allow individual current monitoring. |
| LED Driver Current Sink | Motor Phase Driver (Small DC) |
Use Scenario: Constant-current dimming for 24 V LED string in smart building lighting node. IC Role / Device Role: Two parallel low-side current sinks, one per LED group, controlled by PWM signals. Use Value: Matched VGS(th) and RDS(on) ensure ±3% current matching between groups without calibration. |
Use Scenario: Bidirectional H-bridge driver for 6 V brushed DC motor in medical infusion pump. IC Role / Device Role: Two channels used as half-bridge legs (D1/S1 and D2/S2), with external high-side drivers. Use Value: 150 °C max Tj and −55 °C min Tj support sterilization cycles and cold-storage operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN601DWKQ | Single-channel 60 V, 1.7 A MOSFET in SOT-363; no avalanche rating; RDS(on) = 0.9 Ω @ 10 V. | Requires two devices for dual function; lacks integrated thermal coupling and avalanche ruggedness. | Lower cost where transient immunity is not required and board space permits duplication. |
| FDMA1023NZ | Dual N-channel 30 V, 3.5 A in MicroFET 2x2 mm; RDS(on) = 0.035 Ω @ 10 V; no specified avalanche energy. | Higher current capability but lower voltage rating; unsuitable for 48 V systems. | Better for high-efficiency, high-current 12 V applications where voltage headroom is limited. |
Compared with DMN601DWKQ and FDMA1023NZ, ZDM4206NTC uniquely combines 60 V rating, avalanche ruggedness, and dual-channel integration in a thermally efficient SM-8 package-making it optimal for space-constrained, transient-prone industrial power stages.
Availability
ZDM4206NTC is available at Aetrix Electronics and suitable for industrial DC-DC converters, redundant load switches, LED current sinks, and small-motor phase drivers requiring stable component supply and long-term manufacturability.
Supply support for ZDM4206NTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for industrial, computing, and consumer markets.
ZDM4206NTC belongs to Diodes' Zetex high-reliability discrete portfolio, designed specifically for ruggedized power management in harsh-environment applications where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum safe operating voltage for ZDM4206NTC in continuous DC operation?
The absolute maximum drain-source voltage is 60 V, verified per JEDEC JESD78 testing. For reliable long-term operation, design should limit VDS to ≤48 V under worst-case transients, accounting for ringing and overshoot. The device's 15 mJ avalanche rating provides margin beyond this limit during brief inductive spikes.
Can both channels be paralleled to increase current handling?
No-ZDM4206NTC channels are electrically isolated and not characterized for paralleling. Their RDS(on) matching (±20%) and thermal coupling do not guarantee current sharing. For higher current, use a single-channel part with appropriate rating, such as DMN601DWKQ in dual placement with external balancing.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes-the body diode is rated for 1 A continuous forward current and exhibits soft reverse recovery behavior typical of planar MOSFETs. However, it is not optimized for high-frequency recovery like Schottky diodes; use external Schottky clamps if fSW > 500 kHz and efficiency is critical.
Does ZDM4206NTC require gate resistors for EMI suppression?
Yes-gate series resistance (typically 5–22 Ω) is recommended to dampen ringing caused by Ciss/Crss interaction with PCB trace inductance. The 100 pF Ciss and 20 pF Crss make it susceptible to oscillation without proper gate control, especially at >1 MHz switching frequencies.
ZDM4206NTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-223-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 1A
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 100pF @ 25V
- Power - Max:
- 2.75W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM8
ZDM4206NTC FAQ
1.How can I place an order for ZDM4206NTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZDM4206NTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZDM4206NTC reliable?
The price and inventory of ZDM4206NTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDM4206NTC is usually 5 days.
3.What payment methods are accepted for ZDM4206NTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDM4206NTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZDM4206NTC?
ZDM4206NTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZDM4206NTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZDM4206NTC?
For technical support, including ZDM4206NTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDM4206NTC requirements.
6.How does Aetrix verify that ZDM4206NTC is sourced from the original manufacturer or authorized distributors?
All ZDM4206NTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDM4206NTC meets industry standards.
7.What is the process for return or replacement of ZDM4206NTC?
All ZDM4206NTC units undergo pre-shipment inspection (PSI). If there is an issue with ZDM4206NTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZDM4206NTC part is unused and in its original packaging.
Return procedure for ZDM4206NTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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