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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated ZDM4306NTA

Name: ZDM4306NTA
Brand: Diodes Incorporated
SKU: ZDM4306NTA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZDM4306NTA

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: -

Datasheet:: ZDM4306NTA.pdf

Description:: MOSFET 2N-CH 60V 2A SOT-223-8

Quantity:: RFQ Add To RFQ list

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Inventory:2,097

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Product details

Overview

ZDM4306NTA from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in an SM-8 (SOT223-8) package, rated for 60 V V_DS, 2 A continuous drain current per channel, and 0.22 Ω R_DS(on) at V_GS = 10 V. It operates across –55 °C to +150 °C and is used in compact DC-DC converters and load-switching circuits where space-constrained dual-channel switching is required.

For engineers reviewing the ZDM4306NTA datasheet, ZDM4306NTA pinout, ZDM4306NTA application, or ZDM4306NTA equivalent, key selection criteria include verified dual-die thermal derating (24 mW/°C with both channels active), pulsed drain capability (15 A), gate threshold voltage range (1.3–3 V), and confirmed SOT223-8 leadframe layout with isolated source terminals.

Technical Context

This dual MOSFET integrates two independent N-channel silicon devices on a single die substrate within a thermally enhanced SM-8 package. Each channel supports full 60 V breakdown and exhibits matched R_DS(on) and V_GS(th) tracking over temperature, with typical g_fs of 700 mS at 3 A.

Switching performance is characterized under standard 50 Ω gate drive: t_d(on) = 8 ns, t_r = 25 ns, t_d(off) = 30 ns, and t_f = 16 ns at V_DD ≈ 25 V and I_D = 3 A. Input capacitance (C_iss) is 350 pF at V_DS = 25 V, enabling efficient high-frequency operation in synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage per channel; defines safe operating range in 48 V bus and automotive load-switch applications.
I_D (continuous)	2 A per channel at T_amb = 25 °C - Specifies steady-state current handling with PCB copper area of 2 in²; derates linearly above 25 °C.
R_DS(on)	0.22 Ω max at V_GS = 10 V, I_D = 3 A - Confirmed conduction loss per channel; enables <1 W dissipation at 2 A DC.
V_GS(th)	1.3–3 V - Gate turn-on threshold range; ensures reliable enhancement-mode switching with 3.3 V or 5 V logic-level drive.
C_iss	350 pF - Input capacitance at V_DS = 25 V; determines gate drive strength requirement and impacts switching speed in PWM controllers.
t_d(off)	30 ns - Turn-off delay time with 50 Ω source impedance; critical for dead-time setting in half-bridge configurations.

Pinout & Package

Package: SM-8 (8-lead SOT223), thermally optimized for dual-die mounting on PCBs with ≥2 in² copper area. Leadframe features electrically isolated source terminals (S1, S2) and separate gate/drain connections for independent channel control.

Pin/Terminal	Circuit Role	Design Meaning
D1	Drain of Channel 1	High-side or low-side power path node; internally bonded to first die; requires external trace routing for isolation.
G1	Gate of Channel 1	Control input for Channel 1; threshold-compatible with 3.3 V/5 V microcontrollers; requires <100 nA leakage hold.
S1	Source of Channel 1	Return path for Channel 1; electrically isolated from S2; must be routed separately to avoid cross-channel coupling.
D2	Drain of Channel 2	Independent power path node; matched V_DS rating and R_DS(on) to D1; supports parallel or complementary switching.
G2	Gate of Channel 2	Independent control input; identical V_GS(th) and C_iss to G1; enables synchronized or staggered drive schemes.
S2	Source of Channel 2	Isolated return for Channel 2; no internal connection to S1; essential for floating-source topologies like high-side switches.

Key Features

Feature	Design Value
Dual N-channel topology	Two fully independent enhancement-mode MOSFETs in one SM-8 package-reduces board area by ~40% vs. discrete SOT23 pairs.
Matched parametric tracking	R_DS(on) and V_GS(th) exhibit consistent temperature drift (±10% variation over –55 to +150 °C), enabling balanced current sharing.
Thermally enhanced SM-8	41.6 °C/W θ_JA with both channels active-achieved via exposed copper paddle and optimized leadframe, not standard SOT223.
Low gate charge profile	Q_g ≈ 12 nC at V_DD = 20 V (inferred from gate charge curve)-supports efficient 1–2 MHz switching without excessive driver loss.

Applications

DC-DC Synchronous Buck Converter

Redundant Load Switch

Use Scenario: Dual-phase 12 V input to 3.3 V/2 A output in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Upper and lower switches in synchronous rectification stage; driven by dedicated PWM controller with 100 ns dead time.

Use Value: Matched R_DS(on) minimizes phase current imbalance; 0.22 Ω conduction loss keeps total switch loss below 0.9 W per phase at full load.

Use Scenario: Dual-path 5 V power distribution for FPGA configuration and auxiliary logic rails.

IC Role / Device Role / Timing Role: Independent high-side load switches with enable control; each channel powers separate subsystems.

Use Value: Electrically isolated S1/S2 terminals prevent fault propagation; 60 V rating allows safe operation during hot-swap transients up to 48 V.

Automotive Body Control Module

USB-C Power Delivery Sink

Use Scenario: Dual-channel LED driver for interior lighting with PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: Low-side switches controlling cathode-side current; driven by 3.3 V MCU GPIO with software-controlled duty cycle.

Use Value: 1.3 V minimum V_GS(th) ensures turn-on with 3.3 V logic; –55 °C to +150 °C rating meets AEC-Q101 ambient requirements.

Use Scenario: Dual-path 20 V input switching for USB-C PD 3.0 sink negotiation and VBUS routing.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFETs for reverse-current blocking and bidirectional VBUS control.

Use Value: 0.32 Ω R_DS(on) at V_GS = 5 V enables <100 mV drop at 3 A; Crss = 30 pF limits EMI during fast VBUS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	Single-channel 30 V, 4.2 A, 32 mΩ; SO-8 package; no dual-die integration.	Requires two devices for dual-channel function; higher board area; lacks matched thermal coupling.	Preferred when higher current per channel (>2 A) or lower R_DS(on) (<0.1 Ω) is mandatory and layout space permits duplication.
FDMS86182	Dual N-channel, 60 V, 4.8 A/channel, 22 mΩ at V_GS = 10 V; PowerTrench® 56 package.	Higher P_tot (4.3 W), larger footprint; optimized for high-efficiency server VRMs, not space-constrained consumer modules.	Select when system-level efficiency >95% at 5 A load is required and thermal management includes heatsinking or forced air.

Compared with DMN3026LSD-13 and FDMS86182, ZDM4306NTA uniquely balances compact SM-8 packaging, verified dual-die thermal co-location, and 60 V/2 A capability-making it optimal for cost-sensitive, space-limited industrial and automotive modules where matched parametric behavior matters more than ultra-low R_DS(on).

Availability

ZDM4306NTA is available at Aetrix Electronics and suitable for DC-DC converters, redundant load switches, automotive body control modules, and USB-C power delivery sinks requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZDM4306NTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

ZDM4306NTA belongs to Diodes' Zetex high-voltage MOSFET product line, designed specifically for space-efficient, thermally robust dual-channel switching in industrial power management and automotive sub-systems.

FAQ

What is the maximum allowable junction temperature for ZDM4306NTA?

The absolute maximum junction temperature is +150 °C, aligned with its storage temperature limit. Operation at this temperature requires strict adherence to the specified thermal resistance (41.6 °C/W with both channels active) and PCB copper area (2 in²). Derating curves confirm usable R_DS(on) up to 125 °C junction, but full 150 °C operation demands active thermal monitoring.

Can ZDM4306NTA be used in a high-side switch configuration?

Yes-each channel supports high-side switching when paired with appropriate gate driving circuitry (e.g., bootstrap or isolated gate driver). The SM-8 package provides electrically isolated source terminals (S1, S2), enabling true floating-source operation. However, V_GS must remain within ±20 V relative to its respective source, not ground.

Is ZDM4306NTA RoHS compliant and halogen-free?

Yes-ZDM4306NTA meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The device carries the "Green" marking per Diodes Incorporated's material declaration, with lead-free matte tin plating on all terminations and no antimony trioxide or decabromodiphenyl ether.

Does ZDM4306NTA have integrated ESD protection on its gate terminals?

No-ZDM4306NTA does not include on-chip ESD protection diodes. Its gate oxide is rated for ±20 V V_GS, and IGSS is specified at 100 nA at ±20 V. External gate resistors (≥10 Ω) and TVS clamping are recommended in systems exposed to human-body-model (HBM) ESD events exceeding 2 kV.

ZDM4306NTA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Technology:: -

Configuration:: -

FET Feature:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: -

Power - Max:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

ZDM4306NTA FAQ

1.How can I place an order for ZDM4306NTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZDM4306NTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZDM4306NTA reliable?

The price and inventory of ZDM4306NTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZDM4306NTA is usually 5 days.

3.What payment methods are accepted for ZDM4306NTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZDM4306NTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZDM4306NTA?

ZDM4306NTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZDM4306NTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZDM4306NTA?

For technical support, including ZDM4306NTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZDM4306NTA requirements.

6.How does Aetrix verify that ZDM4306NTA is sourced from the original manufacturer or authorized distributors?

All ZDM4306NTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZDM4306NTA meets industry standards.

7.What is the process for return or replacement of ZDM4306NTA?

All ZDM4306NTA units undergo pre-shipment inspection (PSI). If there is an issue with ZDM4306NTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZDM4306NTA part is unused and in its original packaging.

Return procedure for ZDM4306NTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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