Diodes Incorporated ZVN1409ASTOB

Overview

ZVN1409ASTOB from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for 90 V V_DS, 10 mA continuous drain current, and 250 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching (t_d(on) = 0.3 ns, t_r = 0.5 ns) with low input capacitance (C_iss = 6.5 pF), suited for low-power signal switching in analog front-ends and precision bias networks.

For engineers reviewing the ZVN1409ASTOB datasheet, ZVN1409ASTOB pinout, ZVN1409ASTOB application, or ZVN1409ASTOB equivalent, key selection criteria include verified 90 V breakdown voltage, gate threshold range (0.8–2.4 V), temperature-stable R_DS(on) behavior, and TO-92-compatible lead form factor for through-hole prototyping and space-constrained analog modules.

Technical Context

This discrete MOSFET operates in enhancement mode with a vertically structured DMOS cell, enabling high-voltage blocking while maintaining low gate charge (Q_g < 1 nC typical) and minimal Crss (0.65 pF). Its transconductance (g_fs = 2 mS at V_DS = 25 V, I_D = 10 mA) supports stable small-signal gain control in linear-region applications.

The device exhibits well-characterized saturation behavior up to V_DS = 10 V and I_D = 24 mA at V_GS = 5 V, with normalized R_DS(on) varying less than ±15% across –40 °C to +125 °C junction temperature-critical for thermally stable current-source and cascode bias designs.

Key Specifications

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-lead plastic package with standard D-G-S pin assignment (viewed from flat side, leads down).

Key Features

Applications

Availability

ZVN1409ASTOB is available at Aetrix Electronics and suitable for low-power analog switching, precision biasing, RF termination, and logic-level power multiplexing requiring stable component supply and long-lifecycle support.

Supply support for ZVN1409ASTOB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and Europe.

The ZVN series targets low-power, high-voltage signal switching applications, emphasizing robustness, predictable threshold behavior, and compatibility with legacy through-hole assembly processes.

FAQ

Is ZVN1409ASTOB suitable for use as a high-side switch?

No. The ZVN1409ASTOB is an N-channel MOSFET with source-terminal reference; it requires gate drive above the source potential for conduction. As a result, it functions reliably only as a low-side switch or common-source amplifier unless paired with a dedicated high-side gate driver IC that provides floating bias.

What is the maximum safe operating voltage for ZVN1409ASTOB in pulsed conditions?

The absolute maximum V_DS remains 90 V under all conditions, including pulsed operation. However, pulsed drain current is limited to 40 mA with duty cycle ≤1% and pulse width ≤10 µs. Exceeding these limits risks localized thermal runaway due to insufficient heat dissipation in the TO-92 package.

Does ZVN1409ASTOB have built-in ESD protection?

No. The device has no integrated ESD protection diodes. Gate-source breakdown is rated at ±20 V, but human-body-model (HBM) ESD rating is not specified in the datasheet. Handling requires standard static-control procedures, and PCB layout should include external 10 kΩ gate series resistor and 100 pF capacitor to ground if exposed to user-accessible interfaces.

Can ZVN1409ASTOB replace ZVN2110A in existing designs?

No. Although both are TO-92 N-channel FETs, ZVN2110A has V_DS = 60 V and R_DS(on) = 10 Ω - over 20× lower on-resistance. Substituting ZVN1409ASTOB would increase conduction loss by >95% and likely cause thermal failure in any application drawing >1 mA continuously.