Diodes Incorporated ZVN1409ASTZ

Overview

ZVN1409ASTZ from Zetex Semiconductors (now Diodes Incorporated) is an N-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for 90 V V_DS, 10 mA continuous drain current, and 250 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching with 0.3 ns turn-on delay and low input capacitance (C_iss = 6.5 pF), suited for low-power signal switching in analog front-ends and precision bias networks.

For engineers reviewing the ZVN1409ASTZ datasheet, ZVN1409ASTZ pinout, ZVN1409ASTZ application, or ZVN1409ASTZ equivalent, key selection factors include its 90 V breakdown rating, sub-1 µA IDSS at 90 V, gate threshold range (0.8–2.4 V), temperature-stable R_DS(on) behavior, and TO-92-compatible lead form for through-hole prototyping and space-constrained analog modules.

Technical Context

This discrete MOSFET operates in enhancement mode with a vertically structured DMOS cell, enabling higher voltage tolerance and lower gate charge than planar small-signal FETs. Its low C_iss (6.5 pF) and Crss (0.65 pF) support high-frequency switching up to ~100 MHz in tuned circuits and RF detector stages.

The device exhibits well-defined saturation characteristics with linear transfer gain (g_fs = 2 mS at V_DS = 25 V, I_D = 10 mA) and stable V_GS(th) shift over −55°C to +150°C, making it suitable for temperature-invariant current source and active load applications.

Key Specifications

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-lead plastic package with standard D-G-S pin assignment (viewed from flat side, leads down: Drain–Gate–Source, left-to-right).

Key Features

Applications

Availability

ZVN1409ASTZ is available at Aetrix Electronics and suitable for high-voltage signal switching, precision current sourcing, RF detector loading, and temperature-stable active load applications requiring stable component supply and long-term obsolescence management.

Supply support for ZVN1409ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete semiconductors for precision analog and power-efficient signal conditioning.

ZVN1409ASTZ belongs to the ZVN series of vertical DMOS FETs designed specifically for low-current, high-voltage analog switching and biasing where leakage, capacitance, and thermal stability are critical.

FAQ

Is ZVN1409ASTZ pin-compatible with ZVN2110A?

No. ZVN2110A uses SOT-23 packaging with Drain–Source–Gate pinout (left-to-right), while ZVN1409ASTZ is TO-92 with Drain–Gate–Source order. Physical layout, thermal mass, and parasitic capacitance differ significantly-direct substitution requires PCB redesign and layout validation.

Can ZVN1409ASTZ be used as a replacement for BS170 in 5 V logic circuits?

Yes, but only in low-current (<10 mA), low-frequency (<1 MHz) roles. ZVN1409ASTZ has higher V_GS(th) (0.8–2.4 V vs. BS170's 0.8–3.0 V) and higher R_DS(on) (250 Ω vs. ~5 Ω), so it cannot replicate BS170's switching speed or drive capability-use only where leakage and voltage rating outweigh on-resistance needs.

What is the maximum safe V_GS during transient conditions?

The absolute maximum V_GS is ±20 V per datasheet. Transient spikes exceeding this-even briefly-risk irreversible gate oxide damage. For robust operation, limit gate drive to ≤±15 V with series resistance ≥100 Ω and clamping via 15 V Zener diode to GND/SOURCE.

Does ZVN1409ASTZ support pulsed operation above 10 mA?

Yes-up to 40 mA IDM (pulsed drain current) with duty cycle ≤1% and pulse width ≤10 µs. Thermal limits require strict adherence to P_tot derating curves; at T_amb = 70°C, average power must stay ≤300 mW to avoid junction overheating beyond 150°C.