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Diodes Incorporated ZVN2106ASTOA
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- Part No.:
- ZVN2106ASTOA
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- E-Line-3
- Datasheet:
-
ZVN2106ASTOA.pdf
- Description:
- MOSFET N-CH 60V 450MA E-LINE
- Quantity:
- Payment:
- Shipping:
Inventory:2,823
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Product details
Overview
ZVN2106ASTOA from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 60 V VDS, 2 Ω RDS(on) at VGS = 10 V and ID = 1 A, with 450 mA continuous drain current at 25°C ambient. It serves as a low-voltage logic-level power switch in compact DC-DC converters, LED drivers, and battery protection circuits.
For engineers reviewing the ZVN2106ASTOA datasheet, ZVN2106ASTOA pinout, ZVN2106ASTOA application, or ZVN2106ASTOA equivalent, key selection criteria include verified RDS(on) stability across temperature, gate threshold voltage range (0.8–2.4 V), and TO-92 package thermal derating behavior under pulsed load conditions.
Technical Context
This discrete MOSFET uses vertical DMOS construction to achieve low on-resistance and fast switching in a through-hole TO-92 package. Its 60 V breakdown voltage and 8 A pulsed drain rating support transient-tolerant operation in unregulated 24 V and 48 V supply rails.
The device exhibits typical transconductance of 300 mS at VDS = 18 V and ID = 1 A, with input capacitance (Ciss) of 75 pF and reverse transfer capacitance (Crss) of 20 pF at VDS = 18 V - enabling predictable gate drive timing in low-power switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 60 V - supports operation up to 48 V nominal DC bus with margin for inductive kickback |
| RDS(on) | 2 Ω at VGS = 10 V, ID = 1 A - enables <1 W conduction loss at 500 mA load |
| ID continuous | 450 mA at Tamb = 25°C - requires heatsinking or airflow above 100 mA in sealed enclosures |
| VGS(th) | 0.8–2.4 V - ensures turn-on compatibility with 3.3 V and 5 V logic outputs |
| Ciss | 75 pF - determines gate charge requirement (~12 nC) for 10 V drive at 100 kHz switching |
| Ptot | 700 mW at Tamb = 25°C - limits usable power in TO-92 without PCB copper pour or forced air |
Pinout & Package
Supplied in E-Line TO-92 compatible package (standard 3-lead through-hole plastic case). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - confirmed per Diodes Inc. package drawing 3-361 and pinout labeling on device marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (Pin 1) | Control electrode | Receives logic-level voltage to modulate channel conductivity; requires <20 nA leakage budget in high-impedance bias networks |
| Drain (Pin 2) | High-side current path | Connected to positive rail or inductive load; must withstand 60 V transient spikes without avalanche conduction |
| Source (Pin 3) | Reference node | Typically tied to ground or low-side return; establishes VGS reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns fully on with 3.3 V or 5 V microcontroller GPIO - eliminates need for level-shifting circuitry |
| Low gate charge | ~12 nC total gate charge - reduces driver power consumption and switching losses below 200 kHz |
| Thermal stability | RDS(on) increases only 1.8× from –40°C to +125°C - maintains predictable conduction loss over industrial temperature range |
| Robust SOA | Safe operating area supports 2 A pulsed current at VDS = 18 V - suitable for short-circuit protected load switching |
Applications
| LED Constant-Current Driver | Battery Protection Switch |
|---|---|
Use Scenario: Drives 1–3 white LEDs from 5–12 V supply with analog dimming via PWM on gate. IC Role / Device Role / Timing Role: Low-side current switch controlling LED string current path; gate driven by MCU PWM at 1–10 kHz. Use Value: 2 Ω RDS(on) limits voltage drop to <1 V at 450 mA, preserving >85% forward voltage headroom for LED regulation. | Use Scenario: Disconnects Li-ion cell from load during overcurrent or overtemperature fault detection. IC Role / Device Role / Timing Role: High-side or low-side protection FET controlled by dedicated protection IC (e.g., DW01A). Use Value: 0.8–2.4 V VGS(th) ensures reliable turn-on with 2.8–3.6 V battery voltage range and minimal quiescent current draw. |
| Low-Power DC-DC Synchronous Rectifier | Microcontroller I/O Load Switch |
Use Scenario: Replaces Schottky diode in 5 V buck converter output stage to improve efficiency at light loads. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by controller's complementary gate signal; operates in hard-switching mode. Use Value: 75 pF Ciss and 20 pF Crss minimize Miller-induced shoot-through risk during dead-time transitions. | Use Scenario: Enables/disables peripheral sensors or communication modules (e.g., I²C sensors, UART transceivers) under firmware control. IC Role / Device Role / Timing Role: Low-side load switch isolating VCC return path; gate driven directly from 3.3 V MCU I/O pin. Use Value: 450 mA continuous rating supports typical sensor clusters (<300 mA), while TO-92 footprint simplifies layout in space-constrained IoT nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZVN2110A | RDS(on) = 1.2 Ω (lower), VDS = 60 V, same TO-92 package | Higher conduction efficiency but reduced thermal margin at 450 mA due to identical Ptot | Select when lower I²R loss is prioritized and board-level thermal design accommodates higher junction temperature rise |
| 2N7002 | RDS(on) = 5.5 Ω (higher), VDS = 60 V, SOT-23 package | SMT-only, unsuitable for through-hole assembly or manual prototyping | Choose only for automated SMT production where footprint size and reflow compatibility outweigh RDS(on) penalty |
Compared with ZVN2106ASTOA, ZVN2110A delivers lower conduction loss but demands tighter thermal management, while 2N7002 trades performance for surface-mount scalability - making ZVN2106ASTOA optimal for cost-sensitive through-hole designs requiring balanced RDS(on), thermal capability, and gate drive simplicity.
Availability
ZVN2106ASTOA is available at Aetrix Electronics and suitable for LED drivers, battery protection circuits, and microcontroller load switching requiring stable component supply and long-term manufacturability.
Supply support for ZVN2106ASTOA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and Europe.
ZVN2106ASTOA belongs to the ZVN series of general-purpose N-channel enhancement-mode MOSFETs, designed specifically for cost-effective, low-power switching in consumer, computing, and industrial control applications.
FAQ
Is ZVN2106ASTOA suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 0.8–2.4 V and guaranteed turn-on at VGS = 3.3 V, it fully enhances at standard 3.3 V logic levels. Measured RDS(on) remains ≤2.5 Ω at VGS = 3.3 V and ID = 100 mA, supporting reliable low-current switching without external level shifters.
What is the maximum safe operating frequency in PWM applications?
Based on its 75 pF Ciss, 20 pF Crss, and typical gate charge of ~12 nC, ZVN2106ASTOA supports clean switching up to 200 kHz with standard 50 Ω gate drivers. Above this frequency, gate drive strength and PCB layout parasitics become dominant factors limiting efficiency and waveform fidelity.
Can ZVN2106ASTOA replace a 2N3904 BJT in switching applications?
No - it is not a direct replacement. As an N-channel MOSFET, ZVN2106ASTOA requires gate voltage relative to source, whereas the 2N3904 is an NPN BJT requiring base current. Circuit redesign is needed to accommodate gate drive topology, zero-gate-current biasing, and different saturation characteristics.
Does ZVN2106ASTOA have built-in ESD protection?
No. The datasheet specifies no integrated ESD protection diodes. Gate-source leakage is rated at 20 nA at ±20 V, confirming absence of clamping structures. External 10 kΩ gate resistor and 100 pF capacitor to ground are recommended for robustness in handling-sensitive environments.
ZVN2106ASTOA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- E-Line-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 75 pF @ 18 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- E-Line (TO-92 compatible)
ZVN2106ASTOA FAQ
1.How can I place an order for ZVN2106ASTOA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZVN2106ASTOA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZVN2106ASTOA reliable?
The price and inventory of ZVN2106ASTOA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN2106ASTOA is usually 5 days.
3.What payment methods are accepted for ZVN2106ASTOA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN2106ASTOA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZVN2106ASTOA?
ZVN2106ASTOA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZVN2106ASTOA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZVN2106ASTOA?
For technical support, including ZVN2106ASTOA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN2106ASTOA requirements.
6.How does Aetrix verify that ZVN2106ASTOA is sourced from the original manufacturer or authorized distributors?
All ZVN2106ASTOA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN2106ASTOA meets industry standards.
7.What is the process for return or replacement of ZVN2106ASTOA?
All ZVN2106ASTOA units undergo pre-shipment inspection (PSI). If there is an issue with ZVN2106ASTOA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZVN2106ASTOA part is unused and in its original packaging.
Return procedure for ZVN2106ASTOA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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