Diodes Incorporated ZVN2106GTC
- Part No.:
- ZVN2106GTC
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
ZVN2106GTC.pdf
- Description:
- MOSFET N-CH 60V 710MA SOT223
- Quantity:
- Payment:

- Shipping:

Inventory:5,345
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Product details
Overview
ZVN2106GTC from Diodes Incorporated is a 60V N-channel enhancement-mode vertical MOSFET in SOT223 package, featuring RDS(ON) ≤ 2 Ω at VGS = 10 V, continuous drain current of 0.71 A at TA = +25°C, and 2 W power dissipation on standard FR-4 PCB. It is engineered for automotive solenoid/relay drivers and DC-DC converters requiring low conduction loss and fast switching.
For engineers reviewing the ZVN2106GTC datasheet, ZVN2106GTC pinout, ZVN2106GTC application, or ZVN2106GTC equivalent, key selection criteria include verified 60 V VDSS, confirmed 0.71 A ID rating, validated thermal performance on 50 mm × 50 mm × 1.6 mm FR-4 with 2 oz copper, and SOT223 leadframe compatibility with automated assembly.
Technical Context
This MOSFET employs a vertical DMOS structure optimized for low RDS(ON) while preserving fast switching dynamics: tD(ON) = 7 ns, tR = 8 ns, tD(OFF) = 12 ns, and tF = 15 ns under VDD = 18 V, ID = 1 A, RGS = 50 Ω conditions. Gate threshold voltage is specified from 0.8 V to 2.4 V, enabling reliable turn-on with standard logic-level drive.
Its dynamic capacitances-Ciss = 75 pF, Coss = 45 pF, Crss = 20 pF-are measured at VDS = 18 V and f = 1 MHz, supporting efficient high-frequency operation in compact power stages. The device operates across –55°C to +150°C junction temperature range and meets AEC-Q101 qualification requirements for automotive use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - maximum blocking voltage before avalanche; supports 48 V automotive rail systems with margin |
| RDS(ON) | ≤ 2 Ω @ VGS = 10 V - enables <1.4 W conduction loss at 0.71 A, critical for thermally constrained SOT223 layouts |
| ID (continuous) | 0.71 A @ TA = +25°C - defines steady-state load capability on standard PCB without forced cooling |
| PD | 2 W @ TA = +25°C - achievable only with ≥50 mm × 50 mm 2 oz copper pad; limits power density in space-constrained designs |
| VGS(TH) | 0.8–2.4 V - ensures gate turn-on with 3.3 V or 5 V logic, avoiding marginal drive in noisy environments |
| Ciss | 75 pF - determines gate drive energy requirement and influences switching speed vs. EMI trade-off |
| tF | 15 ns - contributes to total switching time <42 ns, enabling >1 MHz operation in non-isolated buck regulators |
Pinout & Package
Package: SOT223 (Type DN), surface-mount, 4-terminal plastic molded case with exposed drain tab for thermal conduction. Matte tin-annealed copper leadframe; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Exposed metal tab electrically connected to drain; must be soldered to large copper pour for thermal management |
| Source | Reference node for gate control and current return | Common return path for load current; ties to ground or low-side reference in high-side switch configurations |
| Gate | Control input for channel modulation | High-impedance input requiring <20 nA leakage; sensitive to ESD; requires gate resistor for ringing suppression |
| Source (redundant) | Second source connection | Internal parallel bond wire to improve current sharing and reduce parasitic inductance in high-dI/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| 60 V VDSS rating | Supports 48 V battery systems with 25% safety margin against transients per ISO 7637-2 Pulse 5a |
| RDS(ON) ≤ 2 Ω @ 10 V | Reduces conduction loss by >30% versus comparable 60 V SOT223 MOSFETs with RDS(ON) > 2.8 Ω |
| AEC-Q101 qualified | Validated for automotive underhood applications including solenoid drivers and body control modules |
| Lead-free, halogen-free, antimony-free | Complies with RoHS 3 (2015/863/EU) and automotive green material standards (<900 ppm Br+Cl, <1000 ppm Sb) |
| Thermal resistance RθJA ≈ 62.5°C/W | Calculated from PD = 2 W and ΔT = 125°C rise; guides minimum copper area needed for thermal compliance |
Applications
| Automotive Solenoid Driver | Low-Power DC-DC Converter |
|---|---|
Use Scenario: Driving 12 V/24 V fuel injector or HVAC actuator solenoids in engine control units. IC Role / Device Role / Timing Role: Low-side switch controlling coil current with PWM duty cycle up to 10 kHz. Use Value: 0.71 A rating matches typical solenoid hold current; 60 V rating withstands load dump spikes up to 40 V. | Use Scenario: Synchronous rectifier or main switch in 5 V/3.3 V point-of-load buck converter for infotainment MCU. IC Role / Device Role / Timing Role: Power switch operating at 500 kHz–1 MHz with <42 ns total switching time. Use Value: 75 pF Ciss and 15 ns tF enable efficient high-frequency operation while limiting gate drive loss. |
| Relay Interface Circuit | Industrial Sensor Power Switch |
Use Scenario: Solid-state replacement for electromechanical relay in PLC I/O modules controlling 24 V DC loads. IC Role / Device Role / Timing Role: High-side or low-side load switch with controlled turn-on/turn-off to eliminate contact bounce. Use Value: 2 Ω RDS(ON) limits voltage drop to <1.4 V at 0.7 A, preserving sensor supply headroom. | Use Scenario: Power gating for analog sensor front-ends (e.g., pressure, temperature) in battery-powered condition monitoring nodes. IC Role / Device Role / Timing Role: Load switch enabling microamp-level standby current via gate control. Use Value: IDSS ≤ 100 nA at 48 V ensures <5 µW leakage during sleep mode, extending battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | RDS(ON) = 1.8 Ω @ 4.5 V; lower VGS(TH) (0.5–1.2 V); same SOT223 package | Better suited for 3.3 V logic drive; higher pulsed current (IDM = 12 A) | Select when gate drive voltage is limited to 3.3 V or lower, or higher surge tolerance is required. |
| IRLML2502TRPBF | RDS(ON) = 45 mΩ @ 4.5 V; much lower on-resistance but rated only to 20 V VDSS | Not suitable for 48 V systems; ideal for 5 V/12 V logic-level loads only | Choose only for sub-20 V rails where ultra-low RDS(ON) justifies voltage derating. |
Compared with DMN2004LKQ-7 and IRLML2502TRPBF, ZVN2106GTC uniquely balances 60 V blocking capability, 2 Ω RDS(ON) at 10 V, and AEC-Q101 qualification-making it the only option among the three qualified for automotive 48 V solenoid drivers.
Availability
ZVN2106GTC is available at Aetrix Electronics and suitable for automotive solenoid drivers, low-power DC-DC converters, and industrial relay interface circuits requiring stable component supply and long-term lifecycle support.
Supply support for ZVN2106GTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
ZVN2106GTC belongs to Diodes' automotive-qualified power MOSFET product line, developed specifically for robust, thermally efficient switching in 12 V/24 V/48 V vehicle subsystems including body electronics and powertrain interfaces.
FAQ
Is ZVN2106GTC suitable for high-side switching configurations?
Yes, ZVN2106GTC can be used in high-side configurations when paired with appropriate gate-driving circuitry capable of providing VGS ≥ 10 V relative to the source node. Its VGSS rating of ±20 V allows bootstrap or charge-pump gate drive solutions. However, the SOT223 package's thermal limitations require careful PCB layout with large drain-copper areas to sustain continuous current.
What is the maximum safe operating temperature for ZVN2106GTC in continuous operation?
The junction temperature must not exceed +150°C. With a thermal resistance of ~62.5°C/W and 2 W power dissipation, ambient temperature must remain below +87.5°C on a standard FR-4 board. Derating is required above +25°C ambient: at +70°C ambient, maximum continuous power drops to ~1.2 W to maintain TJ ≤ 150°C.
Does ZVN2106GTC have integrated ESD protection?
No, ZVN2106GTC does not include on-die ESD protection diodes. Its gate oxide is susceptible to damage from static discharge; external TVS diodes or series gate resistors with RC snubbers are recommended in production designs. The datasheet specifies |IGSS| ≤ 20 nA at ±20 V, confirming absence of internal clamping structures.
Can ZVN2106GTC replace older ZVN2106A or ZVN2106 in existing designs?
Yes, ZVN2106GTC is a direct replacement for ZVN2106A and ZVN2106, sharing identical pinout, electrical specifications, and SOT223 package. The "GTC" suffix denotes Green (halogen/antimony-free) and RoHS 3-compliant construction, with no performance or reliability degradation versus prior versions.
ZVN2106GTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 710mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 75 pF @ 18 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
ZVN2106GTC FAQ
1.How can I place an order for ZVN2106GTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZVN2106GTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZVN2106GTC reliable?
The price and inventory of ZVN2106GTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN2106GTC is usually 5 days.
3.What payment methods are accepted for ZVN2106GTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN2106GTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZVN2106GTC?
ZVN2106GTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZVN2106GTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZVN2106GTC?
For technical support, including ZVN2106GTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN2106GTC requirements.
6.How does Aetrix verify that ZVN2106GTC is sourced from the original manufacturer or authorized distributors?
All ZVN2106GTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN2106GTC meets industry standards.
7.What is the process for return or replacement of ZVN2106GTC?
All ZVN2106GTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVN2106GTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZVN2106GTC part is unused and in its original packaging.
Return procedure for ZVN2106GTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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