Diodes Incorporated ZVN2110ASTOA

Overview

ZVN2110ASTOA from Zetex Semiconductors (now Diodes Incorporated) is an N-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for 100 V V_DS, 4 Ω R_DS(on) at V_GS = 10 V and I_D = 1 A, with 320 mA continuous drain current at 25°C ambient. It serves as a low-voltage, medium-speed switching device in power management and signal routing circuits.

For engineers reviewing the ZVN2110ASTOA datasheet, ZVN2110ASTOA pinout, ZVN2110ASTOA application, or ZVN2110ASTOA equivalent, key selection criteria include verified 100 V breakdown voltage, gate threshold voltage range of 0.8–2.4 V, pulsed drain current capability up to 6 A, and thermal stability across –55°C to +150°C junction temperature range.

Technical Context

This discrete MOSFET operates in enhancement mode with a vertically structured DMOS cell architecture, enabling higher breakdown voltage and lower on-resistance than planar equivalents in its class. Its gate threshold voltage (0.8–2.4 V) supports direct TTL/CMOS logic-level drive without external level shifting.

Switching performance is characterized by 7 ns turn-on delay, 8 ns rise time, 13 ns turn-off delay, and 13 ns fall time under 25 V V_DD, 1 A I_D, and 50 Ω source impedance - confirming suitability for medium-frequency (<1 MHz) switching applications where gate charge (Q_g ≈ 5 nC typical) and output capacitance (C_oss = 25 pF) are critical.

Key Specifications

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-lead plastic package with standard D-G-S pin assignment (viewed from flat side, leads down).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power switching applications.

Compared with ZVN3310A and 2N7002, ZVN2110ASTOA uniquely balances 100 V capability, through-hole TO-92 usability, and sub-5 Ω on-resistance - making it optimal for legacy industrial controls, educational kits, and field-serviceable equipment where reliability, repairability, and 24–48 V compatibility intersect.

Availability

ZVN2110ASTOA is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O expansion, DC-DC converter sync rectification, and power supply enable switching requiring stable component supply and long-term obsolescence management.

Supply support for ZVN2110ASTOA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete semiconductors for analog and power applications before integration into Diodes' broad portfolio.

ZVN2110ASTOA belongs to the ZVNxxxA vertical DMOS FET family, designed specifically for cost-sensitive, medium-voltage switching in industrial controls, instrumentation, and legacy automotive subsystems where TO-92 mechanical robustness and logic-level gate drive are essential.

FAQ

Is ZVN2110ASTOA suitable for use as a high-side switch?

Yes, but requires gate drive ≥V_DS + V_GS(th). With V_DS up to 100 V and V_GS(th) up to 2.4 V, a dedicated high-side driver or charge pump is necessary - unlike low-side use where 3.3 V/5 V GPIO suffices. The TO-92 package lacks integrated bootstrap diode or level-shifting circuitry.

What is the maximum safe operating frequency for ZVN2110ASTOA in PWM applications?

Based on measured td(on)/tr/td(off)/tf values (7/8/13/13 ns), practical PWM operation is stable up to 500 kHz with proper gate drive strength (≤10 Ω series resistance) and layout minimizing parasitic inductance. Above this, switching losses increase significantly due to C_iss/C_oss interaction and gate charge requirements.

Does ZVN2110ASTOA have built-in ESD protection?

No. The datasheet specifies only IGSS ≤20 nA at ±20 V V_GS; no ESD rating (e.g., HBM or CDM) is provided. External TVS or series resistance (≥100 Ω) is recommended on gate traces in handling-sensitive environments or automated assembly lines.

Can ZVN2110ASTOA replace BS170 in existing designs?

Yes, with verification. Both are TO-92 N-channel MOSFETs, but ZVN2110ASTOA offers higher V_DS (100 V vs. 60 V), lower R_DS(on) (4 Ω vs. ~5 Ω), and tighter V_GS(th) (0.8–2.4 V vs. 0.8–3.0 V). Layout and thermal validation are required, especially if original BS170 operated near its 500 mW limit.