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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVN2110ASTZ

Name: ZVN2110ASTZ
Brand: Diodes Incorporated
SKU: ZVN2110ASTZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVN2110ASTZ

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: ZVN2110ASTZ.pdf

Description:: MOSFET N-CH 100V 320MA E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:2,420

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Product details

Overview

ZVN2110ASTZ from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for 100 V V_DS, 4 Ω R_DS(on) at V_GS = 10 V and I_D = 1 A, with 320 mA continuous drain current at 25°C ambient. It serves as a low-voltage, medium-speed switching device in discrete power control paths such as LED drivers, relay drivers, and small-signal load switches.

For engineers reviewing the ZVN2110ASTZ datasheet, ZVN2110ASTZ pinout, ZVN2110ASTZ application, or ZVN2110ASTZ equivalent, key selection criteria include its 100 V breakdown rating, 4 Ω on-resistance at 10 V gate drive, 7 ns turn-on delay, and TO-92 thermal profile-critical for space-constrained linear and switching regulator auxiliary circuits.

Technical Context

This discrete MOSFET operates in enhancement mode with a gate-threshold voltage range of 0.8–2.4 V (V_GS(th) at I_D = 1 mA), enabling direct TTL/CMOS logic-level drive without level-shifting. Its vertical DMOS structure delivers stable R_DS(on) over temperature, with normalized on-resistance varying only ±20% across –40°C to +125°C junction range.

Switching performance is characterized by 7 ns turn-on delay, 8 ns rise time, 13 ns turn-off delay, and 13 ns fall time under 25 V V_DD, 1 A I_D, and 50 Ω source impedance-indicating suitability for <1 MHz pulse-width modulation and digital load switching where gate charge (Q_g) remains low at ~5 nC (inferred from C_iss/C_rss curves).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports operation in 48 V industrial bus and 24 V automotive subsystems without derating
R_DS(on)	4 Ω at V_GS = 10 V, I_D = 1 A - enables ≤4 W conduction loss at 1 A, suitable for low-duty-cycle loads
I_D cont	320 mA at T_amb = 25°C - defines maximum steady-state current in TO-92 without heatsink
V_GS(th)	0.8–2.4 V - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO
C_iss	75 pF - limits gate drive current requirement to <1 mA for 10 V step in <100 ns
t_d(on)	7 ns - supports PWM frequencies up to ~10 MHz in non-critical timing applications
P_tot	700 mW at T_amb = 25°C - constrains use to intermittent or thermally managed PCB layouts

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-pin plastic case with standard D-G-S terminal assignment (viewed from flat side, leads down).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side current output node	Connected to load return path; electrically tied to metal tab in some variants-requires isolation if mounted to heatsink
Gate (G)	Control input	High-impedance MOS gate; requires series resistor (≤100 Ω) to suppress ringing during fast switching
Source (S)	Reference node / current return	Typically grounded in low-side switch configuration; establishes V_GS reference for threshold behavior

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 2.4 V, eliminating need for external gate driver in 3.3 V/5 V systems
Low gate charge	Inferred Q_g ≈ 5 nC (from C_iss/C_rss vs. V_DS curves) reduces switching losses in battery-powered devices
Thermal stability	R_DS(on) drift ≤ ±20% from –40°C to +125°C, supporting operation in unregulated ambient environments
Fast switching	20 ns total propagation delay (t_d(on) + t_r) enables clean edge transitions in digital load control

Applications

LED Driver Circuits

Relay Driver Stages

Use Scenario: Driving 20–100 mA indicator LEDs in industrial HMIs and instrumentation panels.

IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode path to ground; operated in DC or 1–10 kHz PWM mode.

Use Value: 4 Ω R_DS(on) limits voltage drop to <0.4 V at 100 mA, preserving forward voltage margin for red/green/yellow LEDs.

Use Scenario: Activating 5–12 V coil relays in PLC I/O modules and safety interlock circuits.

IC Role / Device Role / Timing Role: Sustained on/off switching of relay coils with 30–100 ms dwell times and infrequent actuation.

Use Value: 100 V V_DS rating absorbs coil flyback transients up to 80 V without snubber, reducing BOM count.

Microcontroller GPIO Expanders

Small-Signal Load Switches

Use Scenario: Extending limited-current MCU pins (e.g., STM32, PIC) to drive higher-current peripherals like buzzers or solenoids.

IC Role / Device Role / Timing Role: Buffer switch translating 3.3 V/5 V logic states into 100–300 mA load current capability.

Use Value: 0.8–2.4 V V_GS(th) ensures full enhancement with no additional level-shifting circuitry.

Use Scenario: Power gating of sensors, RF modules, or memory peripherals in portable electronics.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by enable signal; duty cycle typically <5%.

Use Value: 700 mW P_tot and TO-92 footprint allow integration near ICs without thermal vias or airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVN3306A	V_DS = 60 V, R_DS(on) = 2.5 Ω, I_D = 480 mA - lower on-resistance but reduced voltage headroom	Better for 24 V systems with higher current demand; unsuitable for 48 V or flyback-prone relay loads	Select when V_DS margin < 60 V and R_DS(on) reduction outweighs voltage derating risk
2N7002K	V_DS = 60 V, R_DS(on) = 3 Ω, SOT-23 package - smaller footprint, lower thermal mass	Preferred for high-density PCBs; limited to ≤200 mA continuous due to package power dissipation	Choose for space-constrained designs where 60 V rating suffices and thermal management is via copper area

Compared with ZVN2110ASTZ, ZVN3306A trades 40 V V_DS headroom for lower conduction loss, while 2N7002K sacrifices thermal robustness and voltage margin for miniaturization-making ZVN2110ASTZ optimal for 48 V-compatible, manually assembled, or thermally isolated applications.

Availability

ZVN2110ASTZ is available at Aetrix Electronics and suitable for LED driver circuits, relay driver stages, microcontroller GPIO expanders, and small-signal load switches requiring stable component supply across industrial control, test equipment, and embedded instrumentation programs.

Supply support for ZVN2110ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, cost-optimized components for industrial, computing, and consumer markets.

ZVN2110ASTZ belongs to Diodes' E-Line vertical DMOS FET product line, designed specifically for general-purpose, through-hole, logic-level switching in cost-sensitive, low-to-medium frequency applications.

FAQ

Is ZVN2110ASTZ suitable for PWM-driven motor control?

No. While it supports PWM switching up to ~10 MHz in theory, its 320 mA continuous current rating, 700 mW power dissipation, and TO-92 thermal resistance (~200°C/W) limit practical use to low-power signals-not motors. Motor control requires higher current handling, better thermal coupling, and often integrated protection features absent here.

Can ZVN2110ASTZ be used in high-side switching configurations?

Yes, but with caveats. As an N-channel device, high-side use requires gate drive ≥ V_DS + V_GS(th), typically needing a charge pump or bootstrap circuit. The 100 V V_DS rating supports this in ≤48 V systems, but layout complexity and gate drive overhead make P-channel alternatives more common for simple high-side loads.

What is the maximum safe operating temperature for ZVN2110ASTZ?

The absolute maximum junction temperature is +150°C, and storage temperature extends to the same range. However, sustained operation above +125°C degrades R_DS(on) and accelerates parametric shift; design should maintain T_j ≤ +125°C using derated current or thermal relief, especially given TO-92's limited heat-spreading capability.

Does ZVN2110ASTZ have built-in ESD protection?

No. The datasheet does not specify human-body model (HBM) or charged-device model (CDM) ESD ratings. Gate oxide is susceptible to damage from static discharge; external 10 kΩ series gate resistor and/or TVS diode between gate and source are recommended in handling and PCB layout for production environments.

ZVN2110ASTZ Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Cut Tape (CT)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 320mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 75 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZVN2110ASTZ FAQ

1.How can I place an order for ZVN2110ASTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN2110ASTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN2110ASTZ reliable?

The price and inventory of ZVN2110ASTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN2110ASTZ is usually 5 days.

3.What payment methods are accepted for ZVN2110ASTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN2110ASTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN2110ASTZ?

ZVN2110ASTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN2110ASTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN2110ASTZ?

For technical support, including ZVN2110ASTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN2110ASTZ requirements.

6.How does Aetrix verify that ZVN2110ASTZ is sourced from the original manufacturer or authorized distributors?

All ZVN2110ASTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN2110ASTZ meets industry standards.

7.What is the process for return or replacement of ZVN2110ASTZ?

All ZVN2110ASTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZVN2110ASTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN2110ASTZ part is unused and in its original packaging.

Return procedure for ZVN2110ASTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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