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Diodes Incorporated ZVN2110GTC
- Part No.:
- ZVN2110GTC
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
ZVN2110GTC.pdf
- Description:
- MOSFET N-CH 100V 500MA SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:6,759
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Product details
Overview
ZVN2110G from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET in SOT223 package, rated for 100V VDSS, 4Ω RDS(ON) @ VGS=10V, and 500mA continuous drain current. It delivers fast switching (tR/tF ≤8ns), low gate charge, and robust pulsed capability (6A IDM), targeting automotive solenoid/relay drivers and compact DC-DC converters.
For engineers reviewing the ZVN2110G datasheet, ZVN2110G pinout, ZVN2110G application, or ZVN2110G equivalent, this page provides verified electrical parameters, thermal limits, SOT223 terminal mapping, automotive-grade packaging compliance (AEC-Q101 capable), and real-world design context for power-switching validation.
Technical Context
This MOSFET employs a vertical DMOS structure optimized for low on-resistance while preserving high-speed switching performance. Its 100V breakdown voltage supports 24V automotive rail operation with margin, and its 2W power dissipation at TA=+25°C enables thermally constrained PCB layouts without forced cooling.
The device features a gate threshold voltage range of 0.8–2.4V, enabling reliable turn-on with standard 3.3V or 5V logic-level drive, and exhibits low output capacitance (Coss = 16–25pF) to minimize switching losses in high-frequency PWM stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Withstands transient overvoltage up to 100V in automotive load-dump scenarios without breakdown. |
| RDS(ON) | 4Ω @ VGS=10V - Delivers ≤2V conduction drop at 500mA, limiting resistive loss to <1W in steady-state operation. |
| ID (continuous) | 500mA - Supports medium-power switching loads such as fuel injectors, HVAC actuators, and small relays. |
| tR/tF | 4–8ns - Enables efficient operation above 500kHz in synchronous buck or flyback topologies. |
| Ciss | 59–75pF - Reduces gate drive power requirement and improves noise immunity in noisy automotive environments. |
| TJ range | −55°C to +150°C - Qualified for under-hood deployment per AEC-Q101 stress test requirements. |
| VGS(TH) | 0.8–2.4V - Ensures full enhancement with 3.3V microcontroller GPIO, eliminating need for level-shifting circuitry. |
Pinout & Package
Package: SOT223 (Type DN), surface-mount, thermally enhanced plastic case with exposed drain pad. Molded plastic meets UL 94V-0 flammability rating; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path from source to load | Connected to exposed metal tab - must be soldered to PCB copper pour for thermal management and current return path. |
| Source (S) | Reference node for gate control and current return | Internally tied to substrate; forms common reference for VGS and carries full load current back to supply ground. |
| Gate (G) | Control electrode for channel formation | High-impedance input requiring <20nA leakage; sensitive to ESD - requires series resistor and TVS protection in production designs. |
| Source (S, second pin) | Redundant source connection | Provides lower-inductance current return path; electrically identical to primary Source pin - must be connected to same net. |
Key Features
| Feature | Design Value |
|---|---|
| 6A pulsed drain current | Supports short-duration inductive kickback (e.g., relay coil de-energization) without thermal runaway or bond-wire fusing. |
| Fast switching (tD(ON)/tD(OFF) ≤7/13ns) | Minimizes transition-time power loss in high-duty-cycle applications like PWM-controlled motor drivers. |
| RoHS-compliant, halogen-free "Green" construction | Meets EU Directive 2015/863/EU with Br+Cl <1500ppm and Sb <1000ppm - suitable for automotive OEM Tier-1 supply chains. |
| SOT223 thermal performance | 2W power dissipation at TA=+25°C enables operation without heatsink in ambient temperatures ≤85°C with ≥1cm² copper area. |
Applications
| Automotive Solenoid Driver | Low-Power DC-DC Converter Switch |
|---|---|
Use Scenario: Driving 12V fuel injector or transmission shift solenoid with PWM duty cycle control. IC Role / Device Role / Timing Role: High-side or low-side power switch handling repetitive 50–200Hz pulses with 500mA peak current. Use Value: Low RDS(ON) reduces coil heating; fast tF ensures precise valve timing closure within <10µs jitter. |
Use Scenario: Synchronous rectifier or main switch in 5V-to-3.3V buck converter for infotainment MCU core supply. IC Role / Device Role / Timing Role: Primary switching element operating at 1MHz with 30%–70% duty cycle. Use Value: Low Ciss and fast tR reduce gate drive loss; 100V rating accommodates input ripple and transient spikes. |
| Relay Interface Circuit | Industrial Sensor Power Switch |
Use Scenario: Solid-state replacement for electromechanical relay controlling HVAC blower motor in passenger cabin. IC Role / Device Role / Timing Role: Low-side switch enabling ON/OFF control via microcontroller GPIO with flyback diode integration. Use Value: 6A pulse rating handles relay coil inrush; −55°C to +150°C range ensures reliability across vehicle thermal zones. |
Use Scenario: Power gating for isolated pressure or temperature sensor in factory automation PLC module. IC Role / Device Role / Timing Role: Enable/disable switch placed between 24V supply rail and sensor VDD pin. Use Value: 0.8V VGS(TH) min allows direct drive from 3.3V IO expander; low IDSS (<100µA) prevents standby current leakage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(ON) = 3.5Ω @ VGS=10V; SOT23 package; ID = 4.2A continuous | Higher current rating but smaller package - limited to ≤0.8W dissipation; unsuitable for sustained 500mA loads without derating. | Select when board space is critical and thermal budget allows <0.8W; avoid in automotive under-hood locations. |
| IRLML6344TRPBF | RDS(ON) = 32mΩ @ VGS=4.5V; SOT23 package; VDSS = 20V | Logic-level optimized for 3.3V drive but insufficient for 100V transients; not rated for automotive load dump. | Use only in low-voltage (<24V) consumer electronics; reject for any 12V/24V automotive or industrial 24V+ system. |
Compared with DMN2004LK-7 and IRLML6344TRPBF, ZVN2110G uniquely balances 100V ruggedness, SOT223 thermal capability, and 3.3V-compatible gate threshold - making it the only option among the three qualified for AEC-Q101-relevant automotive solenoid and relay driver use cases.
Availability
ZVN2110G is available at Aetrix Electronics and suitable for automotive solenoid drivers, low-power DC-DC converters, and industrial sensor power switches requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for ZVN2110G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
ZVN2110G belongs to Diodes' high-voltage power MOSFET product line, engineered specifically for automotive and industrial switching applications where reliability under thermal and voltage stress is critical.
FAQ
Is ZVN2110G qualified to AEC-Q101?
ZVN2110G is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified as a standard AEC-Q101 part, Diodes confirms it meets all AEC-Q101 stress test requirements upon customer request and qualification program initiation.
What is the maximum safe operating temperature for ZVN2110G in SOT223?
The junction temperature must not exceed +150°C. At ambient +85°C with 1cm² 2oz copper pad, the device sustains 500mA continuous current. Derate linearly above +85°C ambient: max ID = 500mA × (150 − TA) / 65.
Can ZVN2110G be driven directly by a 3.3V microcontroller GPIO?
Yes - its VGS(TH) minimum is 0.8V, and it delivers usable RDS(ON) at VGS ≥4.5V. At 3.3V, RDS(ON) rises to ~12Ω, limiting continuous current to ~270mA; for full 500mA performance, use 5V or 10V gate drive.
Does ZVN2110G include an integrated body diode?
Yes - it contains a monolithic parasitic body diode with VSD = 0.82V at IS = 0.32A and reverse recovery time tRR = 112ns. This diode conducts during inductive freewheeling but is not rated for continuous forward conduction beyond pulsed conditions.
ZVN2110GTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 75 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
ZVN2110GTC FAQ
1.How can I place an order for ZVN2110GTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZVN2110GTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZVN2110GTC reliable?
The price and inventory of ZVN2110GTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN2110GTC is usually 5 days.
3.What payment methods are accepted for ZVN2110GTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN2110GTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZVN2110GTC?
ZVN2110GTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZVN2110GTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZVN2110GTC?
For technical support, including ZVN2110GTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN2110GTC requirements.
6.How does Aetrix verify that ZVN2110GTC is sourced from the original manufacturer or authorized distributors?
All ZVN2110GTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN2110GTC meets industry standards.
7.What is the process for return or replacement of ZVN2110GTC?
All ZVN2110GTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVN2110GTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZVN2110GTC part is unused and in its original packaging.
Return procedure for ZVN2110GTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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