Diodes Incorporated ZVN2120A

Overview

ZVN2120A from Zetex (now Diodes Incorporated) is an N-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for 200 V V_DS, 180 mA continuous drain current, and 10 Ω R_DS(on) at V_GS = 10 V. It serves as a low-power switching device in high-voltage signal routing, relay replacement, and precision analog switch applications.

For engineers reviewing the ZVN2120A datasheet, ZVN2120A pinout, ZVN2120A application, or ZVN2120A equivalent, key selection criteria include verified 200 V breakdown voltage, gate threshold voltage range of 1–3 V, pulsed current capability up to 2 A, and thermal stability across –55 °C to +150 °C junction temperature.

Technical Context

This discrete MOSFET operates in enhancement mode with isolated gate control, requiring positive V_GS to conduct. Its vertical DMOS structure enables higher voltage blocking while maintaining low on-resistance for its package class. The device exhibits typical transconductance of 100 mS and input capacitance of 85 pF at 25 V V_DS.

Gate drive compatibility is defined by ±20 V V_GS rating and 20 nA gate leakage at ±20 V. Switching performance includes 8 ns turn-on delay, 8 ns rise time, 20 ns turn-off delay, and 12 ns fall time under 25 V/250 mA test conditions - suitable for medium-speed digital switching below 1 MHz.

Key Specifications

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-pin plastic case with standard D-G-S pin assignment (viewed from flat side, leads down).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage switching applications.

Compared with ZVN2120A, ZVN0124A trades 50 V extra blocking for 5 Ω higher R_DS(on), while ZVNL110A sacrifices half the voltage rating to halve on-resistance - choice depends strictly on whether system voltage stress or conduction loss dominates the design constraint.

Availability

ZVN2120A is available at Aetrix Electronics and suitable for high-voltage signal switching, logic-level relay replacement, and precision analog multiplexing requiring stable component supply and legacy TO-92 footprint compatibility.

Supply support for ZVN2120A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete transistors and analog ICs for precision, high-voltage, and low-noise applications.

ZVN2120A belongs to Zetex's vertical DMOS FET product line, designed specifically for robust, low-leakage switching in space-constrained industrial and instrumentation systems operating up to 200 V.

FAQ

Is ZVN2120A suitable for 120 V AC line-switching applications?

Yes - with 200 V V_DS rating and 150 °C max junction temperature, ZVN2120A supports direct switching of rectified 120 V AC (≈170 V peak) when operated within its 180 mA continuous current and 700 mW power limits. Derating per ambient temperature is required above 25 °C.

What is the recommended gate resistor value for driving ZVN2120A at 100 kHz?

A 100 Ω to 470 Ω series gate resistor is recommended to balance switching speed and ringing suppression. With 85 pF C_iss and typical driver output impedance, this range achieves <20 ns rise/fall times while limiting overshoot under 25 V V_DD conditions.

Does ZVN2120A have built-in ESD protection?

No - ZVN2120A has no integrated ESD protection diodes. Gate-source voltage must be limited to ±20 V, and handling requires standard MOSFET ESD precautions. External 10 kΩ pull-down resistor and series 100 Ω gate resistor are advised in production layouts.

Can ZVN2120A replace BS170 in existing designs?

Only with verification - while both are TO-92 N-channel MOSFETs, ZVN2120A has higher V_DS (200 V vs. 60 V) and higher R_DS(on) (10 Ω vs. ~5 Ω), making it unsuitable for low-voltage, high-current uses. It is appropriate only where 200 V rating is needed and 10 Ω on-resistance is acceptable.