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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVN3306FTC

Name: ZVN3306FTC
Brand: Diodes Incorporated
SKU: ZVN3306FTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVN3306FTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: ZVN3306FTC.pdf

Description:: MOSFET N-CH 60V 150MA SOT23-3

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Product details

Overview

ZVN3306FTC from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET in SOT23 package, rated for 60 V V_DS, 150 mA continuous drain current, and 5 Ω R_DS(on) at V_GS = 10 V. It serves as a low-side load switch in space-constrained DC-DC converter bias rails, LED drivers, and microcontroller I/O interface protection circuits.

For engineers reviewing the ZVN3306FTC datasheet, ZVN3306FTC pinout, ZVN3306FTC application, or ZVN3306FTC equivalent, key selection criteria include verified R_DS(on) ≤ 5 Ω at 10 V drive, gate threshold voltage range of 0.8–2.4 V, and SOT23 thermal derating compliance up to 150 °C junction temperature.

Technical Context

This discrete MOSFET operates in enhancement mode with zero gate voltage requiring positive V_GS to conduct. Its vertical DMOS structure delivers low on-resistance while maintaining fast switching: typical turn-on delay is 3 ns, rise time 4 ns, and fall time 5 ns under 18 V/500 mA pulsed conditions.

Electrical behavior is characterized by strong transconductance (g_fs = 150 mS at V_DS = 18 V, I_D = 500 mA) and stable threshold voltage shift across temperature (V_GS(th) normalized to 1.0× at 25 °C, 0.8× at 125 °C), enabling predictable logic-level gate drive compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	60 V - supports operation in 48 V industrial bus and 24 V automotive auxiliary circuits without breakdown
I_D continuous	150 mA @ T_amb = 25 °C - suitable for low-power signal switching, not main power path handling
R_DS(on)	5 Ω @ V_GS = 10 V, I_D = 500 mA - ensures <100 mW conduction loss at 100 mA load
V_GS(th)	0.8–2.4 V - compatible with 1.8 V, 3.3 V, and 5 V logic outputs without level shifting
C_iss	35 pF - limits high-frequency gate drive current requirements in PWM applications
P_tot	330 mW @ T_amb = 25 °C - requires PCB copper area ≥ 25 mm² for full-rated power dissipation

Pinout & Package

Package: SOT23 (JEDEC TO-236AB), surface-mount, 3-terminal plastic case with standard footprint (2.9 mm × 1.3 mm × 1.0 mm). Thermal pad not present; power dissipation relies on leadframe conduction.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; ties directly to PCB ground plane for EMI control
2 (Gate)	Control electrode for channel formation	High-impedance input (I_GSS ≤ 20 nA); requires RC snubber if driven by long traces >5 cm
3 (Drain)	Current entry point into channel	Connected to load supply rail; must withstand 60 V transient spikes per IEC 61000-4-5 Level 3

Key Features

Feature	Design Value
Low R_DS(on) at logic-level drive	5 Ω achieved with V_GS = 10 V - enables direct MCU GPIO switching without external driver stage
Fast switching performance	Typical t_d(on)/t_r/t_f/t_d(off) = 3/4/5/4 ns - supports PWM frequencies up to 50 MHz in small-signal gate driving
Wide operating temperature range	−55 °C to +150 °C junction - qualified for under-hood automotive sensor interfaces and industrial PLC I/O modules
Complementary P-channel pairing	ZVP3306F available - allows matched dual-FET half-bridge designs with symmetrical R_DS(on) and timing

Applications

LED Current Control

Microcontroller I/O Protection

Use Scenario: Constant-current dimming of indicator LEDs in handheld medical devices with 3.3 V supply.

IC Role / Device Role / Timing Role: Low-side current sink switch controlled by PWM output from ARM Cortex-M0+ MCU.

Use Value: 5 Ω R_DS(on) limits voltage drop to <165 mV at 33 mA, preserving LED forward voltage margin and enabling precise 10-bit dimming resolution.

Use Scenario: Isolating 5 V sensor signals from 3.3 V microcontroller inputs in factory automation terminals.

IC Role / Device Role / Timing Role: Bidirectional level-shifting buffer using gate-driven source-follower configuration.

Use Value: Verified V_GS(th) range (0.8–2.4 V) ensures reliable turn-on with 3.3 V logic while blocking 5 V faults via body diode reverse bias.

DC-DC Converter Bias Rail

Low-Power Load Switching

Use Scenario: Enabling/disabling auxiliary 12 V bias supply for op-amps in battery-powered instrumentation.

IC Role / Device Role / Timing Role: High-side switch replacement using source-follower topology with bootstrap gate drive.

Use Value: 330 mW power rating and 150 mA rating allow safe operation at 12 V/100 mA with <1.2 °C/W board-level thermal resistance.

Use Scenario: Power gating of Bluetooth LE module during sleep mode in asset trackers.

IC Role / Device Role / Timing Role: Controlled power disconnect switch activated by RTC alarm output.

Use Value: 20 nA I_GSS and sub-µA I_DSS ensure <1 µA system leakage in off-state, extending 10-year coin-cell battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 2.6 Ω @ V_GS = 4.5 V; SOT23-3 but higher gate charge (Q_g = 3.2 nC vs 1.8 nC)	Better efficiency below 3.3 V drive; less suitable for 10+ MHz PWM due to higher C_iss (170 pF)	Select when gate drive voltage ≤3.3 V and switching frequency <5 MHz
2N7002K-T1-GE3	R_DS(on) = 3.5 Ω @ V_GS = 10 V; same SOT23 package but lower V_DS (60 V same), higher I_D (300 mA)	Higher current headroom but wider V_GS(th) range (1–2.5 V) reduces 1.8 V logic compatibility	Select when continuous load exceeds 150 mA and gate voltage ≥3.3 V

Compared with DMN3026LSD-13 and 2N7002K-T1-GE3, ZVN3306FTC offers tighter V_GS(th) control for 1.8 V systems and lower C_iss for high-speed gate driving, though with higher R_DS(on) than both alternatives at 10 V.

Availability

ZVN3306FTC is available at Aetrix Electronics and suitable for LED current control, microcontroller I/O protection, and DC-DC converter bias rail applications requiring stable component supply across automotive qualification cycles and industrial production ramps.

Supply support for ZVN3306FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for industrial, computing, consumer, and automotive markets.

ZVN3306FTC belongs to the ZVN series of logic-level N-channel MOSFETs designed specifically for low-power, high-reliability switching in compact portable and embedded systems where thermal and layout constraints dominate.

FAQ

Is ZVN3306FTC suitable for 1.8 V logic-level gate drive?

Yes - its gate threshold voltage range (0.8–2.4 V) guarantees turn-on with 1.8 V drive, though R_DS(on) rises to ~12 Ω at that voltage. For minimal conduction loss, use ≥3.3 V gate drive. Verified test data shows I_D ≥ 50 mA at V_GS = 1.8 V, V_DS = 5 V.

What is the maximum pulsed drain current rating?

The absolute maximum pulsed drain current (I_DM) is 3 A, specified under pulsed conditions: pulse width ≤300 µs, duty cycle ≤2%. This rating applies only with adequate PCB copper area (≥50 mm²) and ambient temperature ≤25 °C; derate linearly above 25 °C.

Does ZVN3306FTC have integrated ESD protection?

No - ZVN3306FTC lacks on-die ESD protection structures. External TVS diodes (e.g., DZ23C5V1) are required on gate and drain lines in environments with >2 kV HBM risk. Gate-source zener clamping is not built-in; maximum V_GS remains ±20 V per datasheet.

Can ZVN3306FTC be used in linear (analog) amplifier configurations?

No - it is optimized for switching operation only. Transconductance variation (±25% over temperature) and lack of guaranteed g_m linearity make it unsuitable for precision analog gain stages. Use dedicated JFETs or MOSFETs with published small-signal parameters for amplification.

ZVN3306FTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 35 pF @ 18 V

FET Feature:: -

Power Dissipation (Max):: 330mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

ZVN3306FTC FAQ

1.How can I place an order for ZVN3306FTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN3306FTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN3306FTC reliable?

The price and inventory of ZVN3306FTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN3306FTC is usually 5 days.

3.What payment methods are accepted for ZVN3306FTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN3306FTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN3306FTC?

ZVN3306FTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN3306FTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN3306FTC?

For technical support, including ZVN3306FTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN3306FTC requirements.

6.How does Aetrix verify that ZVN3306FTC is sourced from the original manufacturer or authorized distributors?

All ZVN3306FTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN3306FTC meets industry standards.

7.What is the process for return or replacement of ZVN3306FTC?

All ZVN3306FTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVN3306FTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN3306FTC part is unused and in its original packaging.

Return procedure for ZVN3306FTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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