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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVN3310ASTOB

Name: ZVN3310ASTOB
Brand: Diodes Incorporated
SKU: ZVN3310ASTOB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVN3310ASTOB

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: ZVN3310ASTOB.pdf

Description:: MOSFET N-CH 100V 200MA E-LINE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZVN3310ASTOB from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 100 V drain-source voltage, 200 mA continuous drain current at 25°C, and 10 Ω R_DS(on) at V_GS = 10 V and I_D = 500 mA. It operates across –55°C to +150°C and is commonly used in low-power switching circuits such as LED drivers and signal-level load control.

For engineers reviewing the ZVN3310ASTOB datasheet, ZVN3310ASTOB pinout, ZVN3310ASTOB application, or ZVN3310ASTOB equivalent, key selection factors include its TO-92-compatible E-Line package, gate threshold voltage range (0.8–2.4 V), low input capacitance (C_iss = 40 pF), and verified performance under pulsed conditions (I_DM = 2 A).

Technical Context

This discrete MOSFET employs vertical DMOS construction for improved conduction efficiency and thermal stability in through-hole mounting configurations. Its enhancement-mode operation requires positive gate bias to conduct, with a typical transconductance of 100 mS at V_DS = 25 V and I_D = 500 mA.

The device exhibits low dynamic switching parameters: turn-on delay of 5 ns, rise time of 7 ns, turn-off delay of 6 ns, and fall time of 7 ns under V_DD ≈ 25 V and I_D = 500 mA. C_oss = 15 pF and C_rss = 5 pF support fast switching in low-noise, low-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage before avalanche breakdown
R_DS(on)	10 Ω - on-resistance at V_GS = 10 V, defining conduction loss in linear/switching operation
I_D (continuous)	200 mA - max steady-state drain current at T_amb = 25°C, derated above ambient
V_GS(th)	0.8–2.4 V - gate voltage range where channel begins forming; impacts logic-level drive compatibility
C_iss	40 pF - input capacitance affecting gate drive power and switching speed
t_d(on)	5 ns - time from gate voltage crossing threshold to 10% drain current rise
P_tot	625 mW - total power dissipation limit at T_amb = 25°C, constrained by TO-92 thermal resistance

Pinout & Package

Package: TO-92-compatible E-Line (3-lead plastic case, axial lead orientation). Pin assignment confirmed per Diodes Incorporated ZVN3310A datasheet Issue 2 (March 1994) and mechanical drawing 3-378.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (high-side connection)	Connected to load supply rail; handles full switched current and blocking voltage
Gate (G)	Control electrode	Receives voltage-controlled signal; high impedance (I_GSS ≤ 20 nA) minimizes drive current demand
Source (S)	Reference node and return path	Common reference for gate drive; ties to ground or low-side return in low-side switch configuration

Key Features

Feature	Design Value
N-channel enhancement mode	Requires only positive V_GS to activate; simplifies gate drive design vs depletion-mode devices
Vertical DMOS structure	Enables higher current density and lower R_DS(on) per die area than planar MOSFETs
Low C_iss/C_oss ratio	C_iss = 40 pF, C_oss = 15 pF - supports efficient high-frequency switching with minimal Miller effect
Wide temperature range	Operates from –55°C to +150°C - suitable for industrial and automotive under-hood environments
TO-92 mechanical compatibility	E-Line footprint matches standard TO-92 PCB footprints - enables drop-in replacement in legacy designs

Applications

LED Indicator Driver

Low-Voltage Signal Switch

Use Scenario: Driving discrete LEDs in panel indicators or status displays with 5–24 V supply rails.

IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-ground current path.

Use Value: 200 mA continuous rating and 10 Ω R_DS(on) ensure stable brightness with <100 mW conduction loss at 20 mA.

Use Scenario: Enabling/disabling analog sensor outputs or microcontroller I/O lines in battery-powered devices.

IC Role / Device Role / Timing Role: Signal-level pass gate isolating downstream circuitry during sleep mode.

Use Value: Gate leakage <20 nA and V_GS(th) ≤ 2.4 V allow direct interface with 3.3 V GPIO without level-shifting.

Relay Driver Interface

Small-Signal Load Control

Use Scenario: Driving relay coils requiring up to 150 mA at 12 V in industrial control modules.

IC Role / Device Role / Timing Role: Buffer between MCU output and inductive coil, absorbing flyback energy via internal body diode.

Use Value: 100 V V_DS rating and 2 A pulsed current capability safely handle relay turn-off transients.

Use Scenario: Controlling small solenoids, buzzers, or fan motors in consumer electronics.

IC Role / Device Role / Timing Role: Power switch in low-duty-cycle intermittent loads.

Use Value: Fast switching (t_r/t_f ≤ 7 ns) reduces transition losses; 625 mW P_tot supports short bursts at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power N-channel switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVN2110A	R_DS(on) = 15 Ω (higher), V_DS = 60 V (lower), same TO-92 package	Not suitable for 100 V bus applications; limited to ≤60 V systems	Select when cost sensitivity outweighs voltage margin and conduction loss requirements
2N7002	R_DS(on) = 5.5 Ω (lower), V_DS = 60 V, SOT-23 surface-mount package	Requires PCB redesign for SMT; unsuitable for through-hole legacy boards	Prefer for new compact designs needing lower on-resistance and higher efficiency at ≤60 V

Compared with ZVN3310ASTOB, ZVN2110A trades voltage headroom for cost, while 2N7002 improves conduction loss but sacrifices mechanical compatibility and voltage rating-making ZVN3310ASTOB optimal for through-hole 100 V switching where thermal and layout constraints favor TO-92.

Availability

ZVN3310ASTOB is available at Aetrix Electronics and suitable for LED indicator drivers, low-voltage signal switches, relay interfaces, and small-signal load control requiring stable component supply and long-term obsolescence management.

Supply support for ZVN3310ASTOB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, computing, and consumer markets.

ZVN3310ASTOB belongs to Diodes' legacy vertical DMOS FET product line, designed specifically for cost-sensitive, through-hole mounted low-power switching applications demanding robustness and wide temperature operation.

FAQ

Is ZVN3310ASTOB suitable for PWM dimming of LEDs?

Yes. With 7 ns rise/fall times and 5 ns turn-on delay, it supports PWM frequencies up to several hundred kHz. Its 10 Ω R_DS(on) ensures minimal conduction loss at typical LED currents (20–100 mA), and the 100 V rating accommodates transient spikes in inductive LED driver circuits.

What is the maximum safe gate drive voltage for ZVN3310ASTOB?

The absolute maximum gate-source voltage is ±20 V. For reliable long-term operation, gate drive should be limited to 10–12 V. Exceeding 15 V risks accelerated gate oxide degradation, especially at elevated junction temperatures (>100°C), as confirmed by V_GS stress testing in the original datasheet.

Can ZVN3310ASTOB replace a 2N3904 BJT in switching applications?

No. While both are three-terminal switches, ZVN3310ASTOB is a voltage-controlled MOSFET with negligible gate current, whereas the 2N3904 is a current-driven BJT requiring base current limiting. Direct substitution would cause drive circuit incompatibility and potential saturation issues due to differing V_BE/V_GS(th) and gain mechanisms.

Does ZVN3310ASTOB have an integrated body diode, and is it rated for reverse recovery?

Yes, it has a parasitic body diode between source and drain. However, the datasheet does not specify reverse recovery time (t_rr) or rated diode current. The diode is intended only for clamping inductive kickback-not for continuous freewheeling. For bidirectional or high-frequency freewheeling, an external Schottky diode is recommended.

ZVN3310ASTOB Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 40 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 625mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZVN3310ASTOB FAQ

1.How can I place an order for ZVN3310ASTOB through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN3310ASTOB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN3310ASTOB reliable?

The price and inventory of ZVN3310ASTOB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN3310ASTOB is usually 5 days.

3.What payment methods are accepted for ZVN3310ASTOB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN3310ASTOB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN3310ASTOB?

ZVN3310ASTOB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN3310ASTOB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN3310ASTOB?

For technical support, including ZVN3310ASTOB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN3310ASTOB requirements.

6.How does Aetrix verify that ZVN3310ASTOB is sourced from the original manufacturer or authorized distributors?

All ZVN3310ASTOB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN3310ASTOB meets industry standards.

7.What is the process for return or replacement of ZVN3310ASTOB?

All ZVN3310ASTOB units undergo pre-shipment inspection (PSI). If there is an issue with ZVN3310ASTOB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN3310ASTOB part is unused and in its original packaging.

Return procedure for ZVN3310ASTOB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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