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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVN3310ASTZ

Name: ZVN3310ASTZ
Brand: Diodes Incorporated
SKU: ZVN3310ASTZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVN3310ASTZ

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: ZVN3310ASTZ.pdf

Description:: MOSFET N-CH 100V 200MA E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:1,950

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Product details

Overview

ZVN3310ASTZ from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 100 V drain-source voltage, 200 mA continuous drain current, and 10 Ω R_DS(on) at V_GS = 10 V and I_D = 500 mA; used in low-power switching, signal-level load control, and battery-powered logic interface circuits.

For engineers reviewing the ZVN3310ASTZ datasheet, ZVN3310ASTZ pinout, ZVN3310ASTZ application, or ZVN3310ASTZ equivalent, key selection criteria include verified 100 V BVDSS, gate threshold range (0.8–2.4 V), 625 mW power dissipation at 25°C, and TO-92-compatible E-Line package compatibility with legacy through-hole layouts.

Technical Context

This discrete MOSFET operates in enhancement mode with a vertically structured DMOS cell, enabling fast switching (t_d(on) = 5 ns, t_f = 7 ns) and stable threshold behavior across temperature (V_GS(th) shifts <±20% from −55°C to +150°C). Its low input capacitance (C_iss = 40 pF) and moderate transconductance (g_fs = 100 mS) support clean digital drive with minimal gate charge (Q_g ≈ 4.5 nC).

The device exhibits well-characterized saturation and output characteristics up to 1 A, with R_DS(on) tracking linearly with V_GS above 3 V and maintaining <12 Ω up to 125°C junction temperature-enabling predictable conduction loss in thermally constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports operation across 24 V industrial rails and 48 V telecom inputs without derating
R_DS(on)	10 Ω @ V_GS = 10 V, I_D = 500 mA - delivers ≤5 V drop at 500 mA, suitable for low-side switch applications
I_D cont	200 mA @ T_amb = 25°C - defines safe steady-state current in free-air, non-heatsinked TO-92 mounting
P_tot	625 mW @ T_amb = 25°C - sets thermal limit for PCB copper area design (≈1 cm² 2-oz copper required)
V_GS(th)	0.8–2.4 V @ I_D = 1 mA - ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive
C_iss	40 pF @ V_DS = 25 V - limits gate drive current requirement to <1 mA for 10 MHz toggle rates
t_f/t_r	7 ns each @ V_DD ≈ 25 V, I_D = 500 mA - enables sub-100 ns switching cycles in timing-critical logic buffers

Pinout & Package

E-Line TO-92 package: molded plastic case with 3 leads, compatible with standard TO-92 footprints and wave-solder processes; lead finish is matte tin, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (high-side or low-side)	Connected to load or supply rail; electrically tied to metal tab in some variants (not applicable here)
Gate (G)	Control electrode	High-impedance input requiring <20 nA leakage; sensitive to ESD-requires series resistor if driven by long traces
Source (S)	Reference node for gate drive and current return	Typically grounded in low-side switches; establishes V_GS reference and must be low-inductance for fast switching

Key Features

Feature	Design Value
100 V breakdown rating	Enables use in 24/48 V systems without external clamping or derating
10 Ω R_DS(on) at 10 V drive	Reduces conduction loss to ≤2.5 W at 500 mA, easing thermal management in compact designs
TO-92 mechanical compatibility	Allows drop-in replacement of legacy N-channel FETs (e.g., 2N7000, BS170) in existing through-hole layouts
−55°C to +150°C operating range	Supports deployment in automotive under-hood, industrial motor control, and outdoor sensor enclosures
Low C_iss / C_oss ratio (40 pF / 15 pF)	Minimizes Miller effect during switching, improving noise immunity in mixed-signal PCBs

Applications

LED Driver Switch

Microcontroller GPIO Expander

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU outputs in space-constrained IoT nodes.

IC Role / Device Role: Low-side switch controlled directly by MCU GPIO without level-shifting.

Use Value: V_GS(th) ≤2.4 V ensures full enhancement at 3.3 V, while 10 Ω R_DS(on) limits LED current error to <5% across temperature.

Use Scenario: Adding 8-bit parallel output capability to an ARM Cortex-M0 with limited GPIO count.

IC Role / Device Role: Discrete buffer array for driving higher-current peripherals (relays, solenoids) from logic-level signals.

Use Value: 200 mA I_D cont and 625 mW P_tot allow sustained 100 mA per channel in 8-channel arrays on standard FR4.

Low-Voltage Power Sequencing

RS-232 Level Translator

Use Scenario: Enabling 5 V and 3.3 V rails in sequence using microcontroller-controlled power-up timing.

IC Role / Device Role: High-side or low-side enable switch in multi-rail PMIC bypass paths.

Use Value: 100 V V_DS margin prevents failure during inrush or transient coupling between rails.

Use Scenario: Converting TTL logic levels to RS-232 voltage swings (±3 to ±15 V) in isolated serial interfaces.

IC Role / Device Role: Discrete pass transistor in charge-pump-assisted level-shifting stages.

Use Value: Fast 7 ns rise/fall times preserve signal integrity up to 230 kbps baud rate without added slew limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N7002K	R_DS(on) = 3.5 Ω @ V_GS = 10 V, but V_DS max = 60 V	Not suitable for >60 V bus monitoring or 48 V telecom inputs	Select when lower on-resistance is critical and voltage stress remains <60 V
BS170	V_DS = 60 V, R_DS(on) = 5 Ω @ 10 V, but P_tot = 500 mW and T_j(max) = 150°C same	Lower power handling reduces margin in sustained 200 mA loads at elevated ambient	Prefer for cost-sensitive consumer designs where 60 V rating suffices and thermal headroom is adequate

Compared with 2N7002K and BS170, ZVN3310ASTZ provides superior voltage margin (100 V vs. 60 V) at the expense of higher R_DS(on), making it optimal for industrial 24/48 V systems where overvoltage robustness outweighs milliohm savings.

Availability

ZVN3310ASTZ is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, low-voltage power sequencing, and RS-232 level translation requiring stable component supply and long-term manufacturability.

Supply support for ZVN3310ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and Europe and ISO/TS 16949-certified manufacturing.

ZVN3310ASTZ belongs to Diodes' E-Line portfolio of general-purpose enhancement-mode MOSFETs, designed specifically for cost-sensitive, high-reliability through-hole applications in industrial controls, appliance subsystems, and legacy-compatible upgrades.

FAQ

Is ZVN3310ASTZ suitable for PWM motor control?

No-it is rated for only 200 mA continuous drain current and 625 mW power dissipation, insufficient for typical brushed DC motor loads. Its 10 Ω R_DS(on) would generate excessive heat above ~100 mA at 25°C ambient. Use instead for signal switching, LED control, or logic buffering-not motor drive.

Does ZVN3310ASTZ have built-in ESD protection?

No. The datasheet specifies only 20 nA gate leakage at ±20 V and does not list human-body model (HBM) or charged-device model (CDM) ESD ratings. External gate protection (e.g., 10 kΩ series resistor + 10 V TVS) is recommended when routing gate traces beyond 2 cm.

Can ZVN3310ASTZ replace the 2N7000 in existing designs?

Yes, with verification: both use TO-92 packages and share pinout (D-G-S), but ZVN3310ASTZ has higher V_DS (100 V vs. 60 V) and higher R_DS(on) (10 Ω vs. 5 Ω). Confirm that 10 Ω on-resistance meets your voltage drop and thermal requirements before substitution.

What is the maximum safe gate drive voltage?

The absolute maximum V_GS is ±20 V. Operation above ±15 V offers diminishing R_DS(on) improvement and increases risk of gate oxide stress. For reliability, limit gate drive to 10–12 V with a series resistor to control dV/dt and suppress ringing.

ZVN3310ASTZ Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Cut Tape (CT)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 40 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 625mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZVN3310ASTZ FAQ

1.How can I place an order for ZVN3310ASTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN3310ASTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN3310ASTZ reliable?

The price and inventory of ZVN3310ASTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN3310ASTZ is usually 5 days.

3.What payment methods are accepted for ZVN3310ASTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN3310ASTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN3310ASTZ?

ZVN3310ASTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN3310ASTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN3310ASTZ?

For technical support, including ZVN3310ASTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN3310ASTZ requirements.

6.How does Aetrix verify that ZVN3310ASTZ is sourced from the original manufacturer or authorized distributors?

All ZVN3310ASTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN3310ASTZ meets industry standards.

7.What is the process for return or replacement of ZVN3310ASTZ?

All ZVN3310ASTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZVN3310ASTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN3310ASTZ part is unused and in its original packaging.

Return procedure for ZVN3310ASTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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