Diodes Incorporated ZVN3310FTC

Overview

ZVN3310FTC from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SOT-23 package, rated for 100 mA continuous drain current and 10 Ω R_DS(ON) at V_GS = 10 V, with 40 pF input capacitance and 330 mW power dissipation - used as low-side load switch in telecom power management and disconnect circuits.

For engineers reviewing the ZVN3310FTC datasheet, ZVN3310FTC pinout, ZVN3310FTC application, or ZVN3310FTC equivalent, key selection criteria include linear-mode pulse current capability (2 A), gate threshold voltage range (0.8–2.4 V), thermal rating (−55 to +150 °C), RoHS-compliant matte tin plating, and SOT-23 footprint compatibility with space-constrained PCB layouts.

Technical Context

This discrete MOSFET employs a planar silicon structure optimized for higher linear-mode pulse current handling versus trench alternatives, enabling robust operation under transient overload conditions without thermal runaway. Its low input capacitance (40 pF) and fast switching times (t_D(on) = 3–5 ns, t_r = 5–7 ns) support efficient low-power switching in battery-backed systems.

The device operates with gate drive compatible with 3.3 V and 5 V logic, featuring a guaranteed V_GS(th) of 0.8–2.4 V and zero-gate-voltage leakage ≤1 μA at 100 V - suitable for high-impedance control nodes and low-quiescent-current standby modes.

Key Specifications

Pinout & Package

Package: SOT-23 (JEDEC TO-236AB), 3-terminal plastic surface-mount case with UL 94V-0 flammability rating, 0.008 g mass, and matte tin-plated Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET switching applications.

Compared with ZVN3310FTC, ZVN2110A trades off breakdown safety for lower conduction loss at low voltage, while DMN2004K delivers higher current capacity within identical footprint - both require validation of gate drive compatibility and SOA under actual load transients.

Availability

ZVN3310FTC is available at Aetrix Electronics and suitable for telecom power sequencing, USB port protection, industrial sensor bias control, and low-power microcontroller I/O expansion requiring stable component supply across extended production lifecycles.

Supply support for ZVN3310FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for power management, signal integrity, and protection applications.

ZVN3310FTC belongs to Diodes' general-purpose MOSFET product line, designed for cost-sensitive, space-constrained switching tasks in consumer, telecom, and industrial equipment where predictable SOA and RoHS compliance are mandatory.

FAQ

What is the maximum safe operating voltage for ZVN3310FTC in continuous DC applications?

The absolute maximum drain-source voltage (V_DSS) is 100 V, but continuous operation should be limited to ≤80 V to maintain margin against transients and ensure long-term reliability per JEDEC JESD78 guidelines. At 80 V and 100 mA, power dissipation remains within the 330 mW rating only with adequate PCB copper area for thermal conduction.

Can ZVN3310FTC be driven directly from a 1.8 V microcontroller GPIO?

No - its gate threshold voltage range (0.8–2.4 V) means 1.8 V may produce inconsistent turn-on, especially at elevated temperature or with process variation. Reliable enhancement-mode operation requires ≥3.3 V gate drive to ensure R_DS(ON) stays below 10 Ω; a level shifter or dedicated gate driver is recommended for 1.8 V systems.

Is ZVN3310FTC suitable for linear (analog) regulation applications?

Yes - its planar structure provides higher safe operating area (SOA) in linear mode than trench MOSFETs, supporting up to 2 A pulsed drain current at V_DS = 25 V. However, continuous linear operation is limited by thermal dissipation: at 100 mA and 50 V drop, 5 W exceeds the 330 mW rating, requiring active cooling or strict duty-cycle control.

Does ZVN3310FTC have avalanche energy rating specified in the datasheet?

No - the DS31980 datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). The device is not characterized for unclamped inductive switching; external snubbers or clamping diodes must be used in inductive load applications to prevent destructive avalanche breakdown.