Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZVN3320FTC

Part No.:
ZVN3320FTC
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixZVN3320FTC.pdf
Description:
MOSFET N-CH 200V 60MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,117

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZVN3320FTC from Diodes Incorporated is an N-channel enhancement-mode vertical MOSFET in SOT23 package, rated for 200 V drain-source voltage, 25 Ω RDS(ON) at VGS = 10 V, and 60 mA continuous drain current. It serves as a low-power switching device in battery-operated systems, solid-state relays, and DC-DC converter control stages where high-voltage tolerance and low leakage are critical.

For engineers reviewing the ZVN3320FTC datasheet, ZVN3320FTC pinout, ZVN3320FTC application, or ZVN3320FTC equivalent, this page delivers verified electrical parameters, terminal mapping, thermal behavior under pulsed operation, and real-world use context for discrete power-switching selection in space-constrained, low-current, high-VDSS designs.

Technical Context

This MOSFET employs a vertical DMOS structure optimized for high breakdown voltage (200 V) while maintaining low gate charge and input capacitance (45 pF Ciss). Its gate threshold voltage (1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drive without external level shifting.

Thermal resistance of 380 °C/W (RθJA) reflects its SOT23 footprint limitation, requiring careful PCB copper area management for sustained 60 mA operation. The body diode supports bidirectional current up to 60 mA with forward voltage <1.2 V at 100 mA, suitable for freewheeling in low-duty-cycle inductive loads.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 200 V - Supports operation across industrial and telecom supply rails up to 170 V DC with safety margin.
RDS(ON) 17–25 Ω @ VGS = 10 V - Delivers ≤1.5 mW conduction loss at 60 mA, enabling thermally stable low-power switching.
ID (continuous) 60 mA - Rated for persistent load control in sensor interfaces, LED biasing, and relay drivers.
Ciss 45 pF - Enables fast turn-on (<5 ns delay) with minimal gate drive energy, reducing controller loading.
VGS(th) 1.0–3.0 V - Ensures reliable turn-on from standard microcontroller GPIOs without auxiliary bias circuitry.
IDSS ≤50 µA @ VDS = 200 V - Guarantees negligible off-state leakage in high-impedance battery monitoring paths.
tF, tR 6–7 ns - Supports >50 MHz switching in low-energy pulse applications like solenoid actuation timing.

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3-terminal leadframe, matte tin finish, moisture sensitivity level 1, and UL 94V-0 flammability rating. Weight: 0.008 g.

Pin/Terminal Circuit Role Design Meaning
Drain (D) High-side switch node Connected to load supply rail; withstands 200 V transient spikes during inductive turn-off.
Gate (G) Control input Low-input-capacitance node (45 pF) compatible with 3.3/5 V CMOS drivers; no external pull-down required in most cases.
Source (S) Reference return path Common node for load current return; forms cathode of integrated body diode for reverse-current protection.

Key Features

Feature Design Value
Low input capacitance 45 pF Ciss reduces gate drive power and improves switching speed in low-duty-cycle control loops.
Low leakage performance ≤50 µA IDSS at 200 V ensures minimal standby current in always-on battery backup circuits.
Green packaging Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets RoHS 3 and automotive environmental requirements.
Thermal stability RDS(ON) increases only 2.4× from –55 °C to +150 °C, supporting operation across extended industrial temperature ranges.

Applications

DC-DC Converter Control Battery-Operated Sensor Node

Use Scenario: Low-quiescent-current step-down regulator using discrete synchronous rectification in portable medical monitors.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into output inductor; operates at 100–500 kHz with 10% duty cycle.

Use Value: 25 Ω RDS(ON) limits conduction loss to <0.1 mW at 20 mA average current, preserving battery runtime over 5-year deployment.

Use Scenario: Wake-up trigger for ultra-low-power environmental sensor clusters powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Load switch enabling/disabling peripheral sensors (e.g., humidity ICs) on demand via MCU GPIO.

Use Value: 10 µA max IGSS and 50 µA IDSS ensure total system sleep current remains below 100 nA, extending shelf life beyond 10 years.

Solid-State Relay Interface LED/Lamp Driver

Use Scenario: Isolated control of 24–48 V AC/DC pilot lights in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Output stage driving optocoupler LED or small solenoid; handles repetitive 100 ms ON pulses.

Use Value: 1 A pulsed drain current rating allows safe surge handling during cold filament inrush, eliminating need for parallel devices.

Use Scenario: Constant-current biasing of status LEDs and alphanumeric displays in automotive infotainment head units.

IC Role / Device Role / Timing Role: Current-limiting series switch between regulated 5 V rail and LED anode; modulated via PWM.

Use Value: Gate threshold uniformity (1.0–3.0 V) ensures consistent brightness across production batches without per-unit calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-current high-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZVN3310F 100 V VDSS, 10 Ω RDS(ON) @ 10 V - lower voltage rating but lower on-resistance. Not suitable for 170 V bus applications; preferred where board space permits higher current density at <100 V. Select when system voltage is capped at 80 V and sub-10 Ω conduction loss is prioritized over voltage margin.
DMN2004LK-7 20 V VDSS, 32 mΩ RDS(ON) @ 4.5 V - logic-level, much lower RDS(ON), but insufficient voltage headroom. Requires gate driver for 200 V operation; unsuitable as direct replacement in high-voltage signal paths. Choose only for 3.3 V/5 V logic-driven loads ≤20 V; not viable for ZVN3320FTC's 200 V use cases.

Compared with ZVN3320FTC, ZVN3310F trades voltage capability for lower RDS(ON) in mid-range supplies, while DMN2004LK-7 offers superior efficiency at low voltages but cannot replace ZVN3320FTC in high-side 200 V switching roles due to catastrophic breakdown risk.

Availability

ZVN3320FTC is available at Aetrix Electronics and suitable for DC-DC converters, battery-operated sensor nodes, and solid-state relay interfaces requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.

Supply support for ZVN3320FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

ZVN3320FTC belongs to Diodes' vertical MOSFET product line, engineered specifically for low-power, high-voltage switching in space-constrained applications such as portable instrumentation, industrial controls, and automotive subsystems.

FAQ

Is ZVN3320FTC suitable for 200 V DC switching applications?

Yes - its guaranteed 200 V drain-source breakdown voltage (BVDSS) and 1 A pulsed drain current rating make it appropriate for controlled 200 V DC switching in non-continuous duty applications such as relay emulation and intermittent load control, provided PCB layout maintains adequate creepage and thermal relief.

Can ZVN3320FTC be driven directly from a 3.3 V microcontroller GPIO?

Yes - with a gate threshold voltage range of 1.0–3.0 V and typical RDS(ON) of 17 Ω at VGS = 10 V, it achieves partial turn-on at 3.3 V (ID ≈ 20–25 mA), sufficient for low-current loads like indicator LEDs or optocouplers; full enhancement requires ≥4.5 V for minimal RDS(ON).

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +150 °C, and the device is characterized across –55 °C to +150 °C. At ambient temperatures up to +85 °C, continuous 60 mA operation is feasible only with ≥1 cm² of 2 oz copper pad per SOT23 footprint to maintain junction temperature within limit given RθJA = 380 °C/W.

Does ZVN3320FTC include an integrated body diode, and what are its characteristics?

Yes - it features an intrinsic body diode with 60 mA maximum forward current and typical forward voltage of ~0.85 V at 100 mA and 25 °C. This diode supports freewheeling in inductive loads and reverse-polarity protection, though its recovery time is not specified and should not be relied upon in high-frequency commutation.

ZVN3320FTC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
60mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
25Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
45 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
330mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

ZVN3320FTC FAQ

1.How can I place an order for ZVN3320FTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN3320FTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN3320FTC reliable?

The price and inventory of ZVN3320FTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN3320FTC is usually 5 days.

3.What payment methods are accepted for ZVN3320FTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN3320FTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN3320FTC?

ZVN3320FTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN3320FTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN3320FTC?

For technical support, including ZVN3320FTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN3320FTC requirements.

6.How does Aetrix verify that ZVN3320FTC is sourced from the original manufacturer or authorized distributors?

All ZVN3320FTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN3320FTC meets industry standards.

7.What is the process for return or replacement of ZVN3320FTC?

All ZVN3320FTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVN3320FTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN3320FTC part is unused and in its original packaging.

Return procedure for ZVN3320FTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZVN3320FTC Tags

  • ZVN3320FTC
  • ZVN3320FTC PDF
  • ZVN3320FTC Datasheet
  • ZVN3320FTC Specifications
  • ZVN3320FTC Images
  • Diodes Incorporated
  • Diodes Incorporated ZVN3320FTC
  • Buy ZVN3320FTC
  • ZVN3320FTC Price
  • ZVN3320FTC Distributor
  • ZVN3320FTC Supplier
  • ZVN3320FTC Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER