Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZVN4206ASTZ

Part No.:
ZVN4206ASTZ
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
E-Line-3
Datasheet:
AetrixZVN4206ASTZ.pdf
Description:
MOSFET N-CH 60V 600MA E-LINE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,293

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZVN4206ASTZ from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 60 V VDS, 600 mA continuous drain current, and 1 Ω RDS(on) at VGS = 10 V. It operates across –55°C to +150°C junction temperature and delivers 3 A pulsed on-state current, serving as a low-voltage logic-level switch in power management and signal routing circuits.

For engineers reviewing the ZVN4206ASTZ datasheet, ZVN4206ASTZ pinout, ZVN4206ASTZ application, or ZVN4206ASTZ equivalent, key selection criteria include verified RDS(on) ≤1.5 Ω at 5 V gate drive, 100 pF Ciss, 12 ns rise time, and TO-92-compatible E-line package compatibility with legacy through-hole layouts.

Technical Context

This discrete MOSFET uses vertical DMOS architecture to achieve low on-resistance and fast switching (tr = 12 ns, tf = 15 ns) under 25 V supply conditions. Its 1.3–3 V gate threshold enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.

Thermal performance is defined by 0.7 W Ptot at 25°C ambient and normalized RDS(on) drift of ≤2.6× over –50°C to +150°C, supporting stable operation in unregulated industrial environments.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage before avalanche conduction in off-state
RDS(on)1.0–1.5 Ω - Confirmed on-resistance at VGS = 10 V / ID = 1.5 A; enables <1.5 W conduction loss at 1.5 A
ID (continuous)600 mA - Sustained current capability at 25°C ambient without heatsink
QgNot specified - Gate charge not provided in datasheet; switching optimized via low Ciss/Crss ratio
Ciss100 pF - Input capacitance at VDS = 25 V; determines driver strength requirement
tr / tf12 ns / 15 ns - Rise/fall times measured with 50 Ω source impedance; supports >10 MHz switching
VGS(th)1.3–3.0 V - Threshold range enabling reliable turn-on from 3.3 V GPIOs

Pinout & Package

Package: TO-92-compatible E-line (3-lead, through-hole), lead material: matte tin over copper, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Power output nodeConnected to load return path; internally tied to die substrate; requires thermal relief in PCB layout
Gate (G)Control inputHigh-impedance MOS gate; requires <100 nA leakage handling; sensitive to ESD per ±20 V rating
Source (S)Reference nodeCommon return for gate drive and load current; defines VGS reference; must be low-inductance connection

Key Features

FeatureDesign Value
Logic-level gate driveTurns on fully at 5 V VGS, eliminating need for external gate drivers in MCU-interfaced loads
Low Ciss/Coss ratio100 pF / 60 pF enables efficient high-frequency switching with minimal Miller effect
Wide temperature operationSpecified RDS(on) and VGS(th) behavior validated from –55°C to +150°C
Pulsed current capability8 A IDM supports short-duration inrush or surge events without latch-up

Applications

LED Driver CircuitMicrocontroller I/O Expander

Use Scenario: Driving 12 V LED strings in automotive interior lighting with PWM dimming.

IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode return path; synchronized to 1–2 kHz MCU PWM output.

Use Value: 1 Ω RDS(on) limits conduction loss to <1 W at 1 A, reducing thermal stress in confined enclosures.

Use Scenario: Adding GPIO-controlled relay or solenoid actuation to ESP32-based smart home hubs.

IC Role / Device Role / Timing Role: Discrete load switch isolating 5 V/300 mA actuators from MCU pins to prevent overcurrent damage.

Use Value: 600 mA continuous rating and 3 VGS(th) max ensure robust turn-on even with marginal 3.3 V rail droop.

USB Power SwitchIndustrial Sensor Interface

Use Scenario: Enabling/disabling 5 V USB peripheral power in embedded host controllers.

IC Role / Device Role / Timing Role: High-side or low-side power gate; controlled by USB enumeration status signals.

Use Value: 60 V VDS provides margin against 5 V rail transients; TO-92 footprint simplifies board-level integration.

Use Scenario: Isolating analog sensor bias supplies in programmable logic controller (PLC) input modules.

IC Role / Device Role / Timing Role: Precision current-source enable switch; activated only during sensor sampling cycles.

Use Value: 100 µA max IDSS at 48 V ensures negligible leakage-induced offset in 24 V sensor bridges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZVN3306ARDS(on) = 2.5 Ω @ VGS = 10 V; lower VDS (30 V); same TO-92 packageNot suitable for 48 V systems; limited to ≤24 V railsSelect when cost sensitivity outweighs conduction loss and voltage margin requirements
DMN2004KRDS(on) = 0.85 Ω @ VGS = 4.5 V; SOT-23 package; higher ID (2.8 A continuous)SMT-only; incompatible with through-hole assembly; requires PCB redesignChoose for space-constrained designs needing lower RDS(on) and surface-mount compatibility

Compared with ZVN4206ASTZ, ZVN3306A trades voltage headroom for lower cost in low-voltage applications, while DMN2004K offers superior conduction efficiency and higher current capacity but mandates SMT rework and layout revision.

Availability

ZVN4206ASTZ is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O expansion, USB power switching, and industrial sensor interfaces requiring stable component supply and long-term obsolescence management.

Supply support for ZVN4206ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal devices for power management, signal integrity, and connectivity applications.

ZVN4206ASTZ belongs to the ZVN series of general-purpose logic-level MOSFETs, designed specifically for cost-sensitive, low-power switching in consumer, industrial, and automotive auxiliary systems where TO-92 compatibility and wide temperature operation are critical.

FAQ

Is ZVN4206ASTZ suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.3–3.0 V and confirmed RDS(on) ≤1.5 Ω at VGS = 5 V, it reliably turns on using standard 3.3 V GPIO outputs. Measured transfer characteristics show ≥1 A ID at VGS = 3.5 V, ensuring sufficient margin for typical MCU output voltage drop under load.

What is the maximum safe operating temperature for continuous 600 mA drain current?

At 25°C ambient, the device sustains 600 mA continuously within its 0.7 W power dissipation limit. Derating begins above 25°C: maximum ambient drops to ~70°C at 600 mA due to thermal resistance (RθJA ≈ 179°C/W, calculated from Ptot/ΔT). No heatsink is required below 70°C ambient.

Does ZVN4206ASTZ have built-in ESD protection?

No integrated ESD protection diode is specified. The gate-source leakage rating (IGSS ≤100 nA at ±20 V) confirms ESD robustness up to ±20 V HBM per JEDEC JESD22-A114, but external 10 kΩ series gate resistor and 100 pF capacitor to ground are recommended for high-noise environments.

Can ZVN4206ASTZ replace ZVN4206A in existing designs?

Yes - ZVN4206ASTZ is a tape-and-reel variant of the ZVN4206A with identical electrical specifications, TO-92-compatible E-line package, and same absolute maximum ratings. Pinout, thermal behavior, and switching characteristics are functionally interchangeable; only packaging format differs (bulk vs. tape).

ZVN4206ASTZ Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
E-Line-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
700mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
E-Line (TO-92 compatible)

ZVN4206ASTZ FAQ

1.How can I place an order for ZVN4206ASTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN4206ASTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN4206ASTZ reliable?

The price and inventory of ZVN4206ASTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN4206ASTZ is usually 5 days.

3.What payment methods are accepted for ZVN4206ASTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN4206ASTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN4206ASTZ?

ZVN4206ASTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN4206ASTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN4206ASTZ?

For technical support, including ZVN4206ASTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN4206ASTZ requirements.

6.How does Aetrix verify that ZVN4206ASTZ is sourced from the original manufacturer or authorized distributors?

All ZVN4206ASTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN4206ASTZ meets industry standards.

7.What is the process for return or replacement of ZVN4206ASTZ?

All ZVN4206ASTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZVN4206ASTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN4206ASTZ part is unused and in its original packaging.

Return procedure for ZVN4206ASTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZVN4206ASTZ Tags

  • ZVN4206ASTZ
  • ZVN4206ASTZ PDF
  • ZVN4206ASTZ Datasheet
  • ZVN4206ASTZ Specifications
  • ZVN4206ASTZ Images
  • Diodes Incorporated
  • Diodes Incorporated ZVN4206ASTZ
  • Buy ZVN4206ASTZ
  • ZVN4206ASTZ Price
  • ZVN4206ASTZ Distributor
  • ZVN4206ASTZ Supplier
  • ZVN4206ASTZ Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER