Diodes Incorporated ZVN4210ASTOA

Overview

ZVN4210ASTOA from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 100 V drain-source voltage, 1.5 Ω R_DS(on) at V_GS = 10 V and I_D = 1.5 A, and 450 mA continuous drain current at 25°C ambient - used in low-power switching, signal-level load control, and battery-powered logic interface circuits.

For engineers reviewing the ZVN4210ASTOA datasheet, ZVN4210ASTOA pinout, ZVN4210ASTOA application, or ZVN4210ASTOA equivalent, key selection criteria include verified R_DS(on) stability over temperature, gate threshold voltage range (0.8–2.4 V), and TO-92-compatible thermal derating behavior under pulsed 6 A loads.

Technical Context

This discrete MOSFET employs a vertical DMOS structure optimized for low-voltage logic-level drive compatibility and fast switching (t_d(on) = 4 ns, t_f = 30 ns) with minimal gate charge (Q_g ≈ 12 nC at V_DD = 20 V). Its 100 V BVDSS rating supports operation across 24 V industrial rails and 48 V telecom subsystems.

Thermal performance is defined by a 700 mW P_tot at T_amb = 25°C and junction temperature range of –55°C to +150°C, with normalized R_DS(on) increasing to ~1.8× at 125°C - critical for sustained duty-cycle designs in enclosed environments.

Key Specifications

Pinout & Package

Package: TO-92 compatible (E-Line variant), through-hole, 3-pin plastic case with standard D-G-S terminal assignment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power switching applications.

Compared with ZVN4210ASTOA, ZVN3310F trades conduction efficiency for tighter gate leakage control, while DMN2004LK-7 delivers lower R_DS(on) and higher current in SMT form - making it suitable for space-constrained, higher-duty-cycle applications.

Availability

ZVN4210ASTOA is available at Aetrix Electronics and suitable for low-power load switching, microcontroller I/O buffering, and 24 V industrial control applications requiring stable component supply and long-term TO-92 package continuity.

Supply support for ZVN4210ASTOA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, cost-optimized components for industrial, computing, and consumer markets.

ZVN4210ASTOA belongs to Diodes' legacy vertical DMOS FET product line, designed specifically for logic-level-driven, through-hole mounted switching in space- and cost-sensitive applications where TO-92 mechanical robustness and thermal predictability are essential.

FAQ

Is ZVN4210ASTOA suitable for 5 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 0.8–2.4 V and guaranteed turn-on at V_GS = 3.3 V, ZVN4210ASTOA operates reliably with standard 5 V and 3.3 V logic outputs. No external level shifter is needed, and its 100 nA gate leakage avoids unintended turn-on in high-impedance states.

What is the maximum safe pulsed drain current?

The absolute maximum pulsed drain current (I_DM) is 6 A, specified under short-duration conditions (duty cycle ≤1%, pulse width ≤10 µs). This rating assumes proper PCB copper area for heat spreading and ambient temperature ≤25°C; sustained operation above 450 mA requires thermal derating per the 700 mW P_tot limit.

Does ZVN4210ASTOA have avalanche rating?

No. The datasheet does not specify avalanche energy (E_AS) or repetitive avalanche capability. It is intended for clamped inductive switching only when paired with external flyback diodes or snubbers - operation beyond 100 V V_DS may cause irreversible device failure.

Can ZVN4210ASTOA replace BS170 in existing designs?

Yes, with verification. Both are TO-92 N-channel MOSFETs, but ZVN4210ASTOA offers lower R_DS(on) (1.5 Ω vs. ~5 Ω), higher V_DS (100 V vs. 60 V), and tighter V_GS(th) distribution. Layout and thermal margins should be rechecked, especially under 1.5 A loads where conduction loss drops by ~70%.