Diodes Incorporated ZVN4210GTA
- Part No.:
- ZVN4210GTA
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
ZVN4210GTA.pdf
- Description:
- MOSFET N-CH 100V 800MA SOT223
- Quantity:
- Payment:

- Shipping:

Inventory:2,590
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Product details
Overview
ZVN4210GTA from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET in SOT223 package, rated for 100 V drain-source voltage, 1.5 Ω RDS(on) at VGS = 10 V, and 800 mA continuous drain current at TA = +25°C. It delivers high-efficiency power switching in compact DC-DC converters and load-switching circuits.
For engineers reviewing the ZVN4210GTA datasheet, ZVN4210GTA pinout, ZVN4210GTA application, or ZVN4210GTA equivalent, key selection criteria include its 100 V BVDSS rating, low 1.5 Ω on-resistance at 10 V gate drive, fast 4 ns turn-on delay, integrated body diode with 0.79 V forward drop, and SOT223 thermal performance supporting 2 W dissipation.
Technical Context
This MOSFET employs a vertical DMOS structure optimized for low conduction loss while preserving fast switching behavior. Its gate threshold voltage (0.8–2.4 V) enables compatibility with 3.3 V and 5 V logic-level control, and its 100 pF input capacitance supports stable gate driving at moderate frequencies.
The device integrates a monolithic body diode with reverse recovery time of 135 ns and exhibits robust thermal capability (TJ = –55 to +150°C), making it suitable for thermally constrained PCB layouts where SOT223 footprint and 2 W PD are critical constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100 V - Withstands up to 100 V drain-to-source blocking voltage before avalanche onset |
| RDS(on) | 1.5 Ω @ VGS = 10 V - Enables <1.2 W conduction loss at 800 mA, critical for efficiency in low-power SMPS |
| ID (continuous) | 800 mA @ TA = +25°C - Supports steady-state load switching in battery-powered and auxiliary rail applications |
| tD(on) | 4 ns - Minimizes dead-time losses in synchronous buck or half-bridge topologies |
| Ciss | 100 pF - Determines gate drive energy requirement and influences switching speed vs. EMI trade-off |
| VSD | 0.79 V @ IS = 0.32 A - Low forward drop reduces power loss during freewheeling in inductive loads |
| PD | 2 W @ TA = +25°C - Defines maximum steady-state power handling without heatsink in standard FR-4 layout |
Pinout & Package
Package: SOT223 (Type DN), surface-mount, 3-terminal plastic molded case with exposed drain pad for thermal conduction. Weight: 0.112 g. Moisture sensitivity level: J-STD-020 Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Exposed metal tab - electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical continuity |
| Gate | Control electrode | High-impedance input requiring <100 nA leakage; sensitive to ESD; routed away from noisy traces |
| Source | Reference node for gate drive and current return | Common connection point for load return path and gate driver ground reference |
Key Features
| Feature | Design Value |
|---|---|
| Lead-free, RoHS-compliant finish | Matte tin annealed over copper leadframe - ensures solderability per MIL-STD-202 and eliminates Pb-based contamination risk in consumer/industrial assembly |
| Halogen- and antimony-free "Green" construction | Br < 900 ppm, Cl < 900 ppm (Br+Cl < 1500 ppm), Sb < 1000 ppm - meets IEC 61249-2-21 and automotive environmental compliance requirements |
| Low RDS(on) with fast switching | 1.5 Ω @ 10 V + 4 ns tD(on) - balances conduction and switching loss for >90% efficiency in 5–24 V input DC-DC stages |
| Integrated body diode | VSD = 0.79 V @ 0.32 A - Eliminates need for external flyback diode in low-current inductive switching applications |
Applications
| DC-DC Converter High-Side Switch | USB Port Power Switch |
|---|---|
Use Scenario: Step-down converter operating from 12 V input to 3.3 V/500 mA output in space-constrained IoT sensor node. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling power delivery to downstream LDO or microcontroller rail. Use Value: 1.5 Ω RDS(on) limits conduction loss to ~600 mW at full load, enabling passive cooling in sealed enclosure. | Use Scenario: USB 2.0 host port implementing overcurrent protection and hot-plug enable/disable in industrial HMI panel. IC Role / Device Role / Timing Role: Load switch isolating VBUS from peripheral during fault or standby mode. Use Value: 100 V BVDSS provides margin against transient surges; 800 mA ID supports full USB 2.0 bus power capability. |
| LED Driver Current Regulator | Automotive Interior Lighting Control |
Use Scenario: Constant-current LED string driver for status indicators in medical diagnostic equipment. IC Role / Device Role / Timing Role: Low-side current sink modulated via PWM from MCU GPIO. Use Value: Fast 4 ns tD(on) and 30 ns tF support >100 kHz PWM dimming without visible flicker or thermal overshoot. | Use Scenario: Dimmable map light circuit in passenger compartment, powered from 12 V battery with ignition-sensed enable. IC Role / Device Role / Timing Role: Ground-referenced switching element controlled by vehicle body controller PWM signal. Use Value: –55 to +150°C operating range and AEC-Q101 qualification readiness ensure reliability across under-dash temperature extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZVN4208GTA | Lower BVDSS (60 V), lower RDS(on) (1.0 Ω), same SOT223 package | Not suitable for 100 V bus applications; better for ≤48 V systems needing lower conduction loss | Select when system max VDS ≤ 60 V and efficiency at light load is prioritized |
| DMN2053UVT-7 | Higher ID (1.2 A), lower RDS(on) (0.85 Ω @ 4.5 V), same 100 V rating, SOT-23-3 package | Smaller footprint but lower thermal mass; limited to ≤1 W continuous dissipation | Choose for ultra-compact designs with <1 A load and active thermal management |
Compared with ZVN4210GTA, ZVN4208GTA trades off voltage rating for lower on-resistance in identical packaging, while DMN2053UVT-7 offers higher current capability in a smaller SOT-23-3 form factor-both require re-evaluation of thermal layout and gate drive strength.
Availability
ZVN4210GTA is available at Aetrix Electronics and suitable for DC-DC converters, USB power switches, LED drivers, and automotive interior lighting requiring stable component supply across industrial and embedded production cycles.
Supply support for ZVN4210GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The ZVN series targets cost-sensitive, high-volume power management applications where SOT223 thermal performance, RoHS/Green compliance, and logic-level gate drive are essential design requirements.
FAQ
Is ZVN4210GTA suitable for 5 V logic-level gate drive?
Yes. Its gate threshold voltage ranges from 0.8 V to 2.4 V, and RDS(on) is specified at VGS = 5 V (1.8 Ω). It fully enhances with standard 5 V microcontroller GPIO outputs, delivering reliable 800 mA conduction without external level shifting.
What is the thermal resistance junction-to-ambient for ZVN4210GTA in standard SOT223 layout?
Per DS33366 Rev. 4–2, the typical θJA is 62.5°C/W on a 1-inch² 2-oz copper pad. This value assumes no internal layer copper and standard JEDEC test board conditions; actual PCB layout with thermal vias and larger copper area can reduce θJA to ~45°C/W.
Does ZVN4210GTA have AEC-Q101 qualification?
No. The datasheet states that automotive-grade versions require specific change control and PPAP capability; ZVN4210GTA itself is not AEC-Q101 qualified. For automotive use, contact Diodes Incorporated directly for qualified variants such as ZVN4210GQTA.
Can ZVN4210GTA replace a bipolar transistor in linear regulator applications?
No. As an enhancement-mode MOSFET, it lacks inherent current-limiting behavior and safe operating area (SOA) characterization for linear-mode operation. Its RDS(on) is optimized for switching, not analog conduction; use only in saturated or switching configurations per datasheet SOA curves.
ZVN4210GTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
ZVN4210GTA FAQ
1.How can I place an order for ZVN4210GTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZVN4210GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZVN4210GTA reliable?
The price and inventory of ZVN4210GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN4210GTA is usually 5 days.
3.What payment methods are accepted for ZVN4210GTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN4210GTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZVN4210GTA?
ZVN4210GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZVN4210GTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZVN4210GTA?
For technical support, including ZVN4210GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN4210GTA requirements.
6.How does Aetrix verify that ZVN4210GTA is sourced from the original manufacturer or authorized distributors?
All ZVN4210GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN4210GTA meets industry standards.
7.What is the process for return or replacement of ZVN4210GTA?
All ZVN4210GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZVN4210GTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZVN4210GTA part is unused and in its original packaging.
Return procedure for ZVN4210GTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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