Diodes Incorporated ZVN4306GVTA

Overview

ZVN4306GVTA from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 60 V drain-source voltage, 0.33 Ω R_DS(on) at V_GS = 10 V, and 2.1 A continuous drain current in SOT223 package; it serves as a high-efficiency power switch in DC-DC converters and automotive solenoid drivers.

For engineers reviewing the ZVN4306GVTA datasheet, ZVN4306GVTA pinout, ZVN4306GVTA application, or ZVN4306GVTA equivalent, key selection criteria include its 60 V BVDSS rating, 0.33 Ω on-resistance at 10 V gate drive, 3 W power dissipation, 15 A pulsed drain capability, and SOT223 thermal performance in compact power management designs.

Technical Context

This MOSFET employs a vertical DMOS structure optimized for low conduction loss while preserving fast switching behavior, with 8 ns turn-on delay and 25 ns rise time under 25 V V_DD, 10 V gate drive, and 3 A load conditions.

It features a 1.3–3 V gate threshold voltage, 0.7 S forward transconductance at 3 A, and integrated body diode with 0.82 V forward voltage at 0.32 A - enabling self-commutated operation in flyback and stepper motor H-bridge configurations.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal plastic molded case with exposed drain tab for thermal conduction; moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3026LSD-13 and IRLML6344TRPBF, ZVN4306GVTA uniquely supports 60 V operation in SOT223 with balanced RDS(on), switching speed, and avalanche ruggedness - making it the only viable option for 48 V industrial and 12/24 V automotive power switching where voltage margin and thermal robustness are critical.

Availability

ZVN4306GVTA is available at Aetrix Electronics and suitable for automotive solenoid drivers, DC-DC buck converters, and industrial relay interfaces requiring stable component supply across production lifecycles.

Supply support for ZVN4306GVTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

ZVN4306GVTA belongs to Diodes' vertical DMOS power MOSFET product line, engineered specifically for high-reliability, medium-voltage switching in automotive and industrial power management where avalanche tolerance and thermal robustness are mandatory.

FAQ

Is ZVN4306GVTA qualified to AEC-Q101?

No - the ZVN4306GVTA is not AEC-Q101 qualified. Diodes offers AEC-Q101 versions under different part numbers (e.g., ZVN4306GQTA) with PPAP documentation and IATF 16949 manufacturing. This variant is intended for industrial and commercial applications meeting RoHS and green compliance but not automotive qualification requirements.

What is the thermal resistance (RθJA) for ZVN4306GVTA in SOT223?

The datasheet does not specify RθJA for ZVN4306GVTA. However, typical SOT223 (Type DN) packages with standard 1-in² 2-oz copper pad achieve ~100 °C/W RθJA. For 3 W dissipation, junction temperature rise would be ~300 °C above ambient - confirming that derating or enhanced thermal layout (e.g., multi-layer thermal vias, larger copper area) is required to stay within the −55 to +150 °C operating range.

Can ZVN4306GVTA be used as a high-side switch?

No - ZVN4306GVTA is an N-channel MOSFET and cannot function as a true high-side switch without a gate voltage higher than the source (i.e., bootstrap or charge-pump circuitry). Its gate threshold (1.3–3 V) and 20 V VGS rating make it suitable only for low-side or common-source configurations unless paired with dedicated high-side driver ICs like the LM5113 or IRS2117.

Does ZVN4306GVTA have a specified gate charge (Qg)?

No - the official DS33370 Rev. 3-2 datasheet does not list total gate charge (Qg), gate-to-source charge (Qgs), or gate-to-drain charge (Qgd). Designers must estimate switching losses using Ciss (350 pF), Crss (30 pF), and measured gate drive waveforms, or contact Diodes technical support for SPICE models containing Qg parameters if available upon request.