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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVN4306GVTC

Name: ZVN4306GVTC
Brand: Diodes Incorporated
SKU: ZVN4306GVTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVN4306GVTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ZVN4306GVTC.pdf

Description:: MOSFET N-CH 60V 2.1A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:5,822

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Product details

Overview

ZVN4306GV from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 60 V drain-source voltage, 0.33 Ω R_DS(on) at V_GS = 10 V, and 2.1 A continuous drain current at T_A = +25°C; it serves as a high-efficiency power switch in DC-DC converters and automotive solenoid/relay drivers.

For engineers reviewing the ZVN4306GV datasheet, ZVN4306GV pinout, ZVN4306GV application, or ZVN4306GV equivalent, key selection criteria include its 60 V BVDSS rating, 0.33 Ω on-resistance at 10 V gate drive, 3 W power dissipation in SOT223 package, and suitability for pulsed-load switching in industrial and automotive power stages.

Technical Context

This MOSFET employs vertical DMOS architecture to achieve low R_DS(on) while maintaining fast switching performance: t_D(on) = 8 ns, t_R = 25 ns, t_D(off) = 30 ns, and t_F = 16 ns under V_DD ≈ 25 V, I_D = 3 A conditions with 50 Ω source impedance.

It features a gate-threshold voltage range of 1.3–3.0 V, supports ±20 V gate-source voltage, and includes an integrated body diode with V_SD = 0.82 V at I_S = 0.32 A and reverse recovery time T_RR = 112 ns - enabling efficient freewheeling in inductive load circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - maximum blocking voltage before avalanche conduction in off-state
RDS(on)	0.33 Ω @ VGS = 10 V, ID = 3 A - determines conduction loss and thermal rise under full-load operation
ID (continuous)	2.1 A @ TA = +25°C - usable DC current limit without heatsinking in ambient air
Ptot	3 W - total package power dissipation limit at 25°C ambient, defining thermal design margin
VGS(th)	1.3–3.0 V - gate voltage range where device transitions from cutoff to conduction
Ciss	350 pF - input capacitance affecting gate drive strength and switching speed
tD(on)	8 ns - delay from gate voltage crossing threshold to drain current initiation

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal plastic molded case with exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≥1.3 V to initiate conduction, driven by logic-level or dedicated gate driver
Pin 2 (D)	Drain	Main current-carrying terminal; electrically connected to exposed metal tab for thermal path and high-current routing
Pin 3 (S)	Source	Reference node for gate drive and current return path; common connection point for load-side ground reference
Pin 4 (D)	Drain (Tab)	Secondary drain connection via thermally conductive metal tab; must be soldered to PCB copper pour for thermal management

Key Features

Feature	Design Value
Low RDS(on) at 10 V drive	0.33 Ω enables <1 W conduction loss at 2 A, reducing heatsink requirements in space-constrained designs
Fast switching times	8 ns turn-on delay and 16 ns fall time support >1 MHz PWM operation in high-frequency DC-DC topologies
Integrated body diode	VSD = 0.82 V / TRR = 112 ns allows reliable freewheeling in relay/solenoid and stepper motor H-bridge applications
Automotive-grade qualification readiness	Manufactured in IATF 16949 certified facilities; supports PPAP and AEC-Q101 change control upon request

Applications

DC-DC Converters

Automotive Solenoid Drivers

Use Scenario: Step-down (buck) converter in 12 V automotive subsystems powering infotainment or ADAS sensors.

IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier switch operating at 200–500 kHz PWM frequency.

Use Value: 0.33 Ω R_DS(on) minimizes I²R losses at 2 A load, improving efficiency over discrete alternatives with higher on-resistance.

Use Scenario: Driving 12 V fuel injector or HVAC actuator solenoids requiring controlled turn-on/turn-off timing.

IC Role / Device Role / Timing Role: Low-side switch with fast 16 ns fall time to suppress inductive kickback and reduce EMI.

Use Value: 60 V BVDSS safely clamps flyback voltage spikes up to 50 V, eliminating need for external TVS in many designs.

Stepper Motor Drivers

Industrial Relay Control

Use Scenario: Half-bridge leg in bipolar stepper driver for CNC or printer motion control.

IC Role / Device Role / Timing Role: Power switch in H-bridge configuration handling bidirectional coil current up to 2.1 A.

Use Value: Body diode with 112 ns T_RR provides predictable freewheeling path during current reversal, reducing cross-conduction risk.

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V PLC outputs or HVAC zone valves.

IC Role / Device Role / Timing Role: Load-switching element with 15 A pulsed drain capability for inrush current handling.

Use Value: 3 W P_tot and SOT223 thermal pad allow direct PCB mounting without auxiliary heatsinks in 10–30 Hz switching cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.035 Ω @ V_GS = 10 V, but rated only for 30 V BVDSS	Not suitable for 48–60 V bus applications; limited to ≤30 V systems	Select when lower conduction loss is critical and system voltage stays ≤30 V
IRLML6344TRPBF	R_DS(on) = 0.038 Ω @ V_GS = 4.5 V, SOT-23 package, 20 V BVDSS	Lower voltage rating and smaller package limit power handling and thermal capacity	Prefer for ultra-compact, low-voltage logic-level switching where 2.1 A is sufficient

Compared with DMN3026LSD-13 and IRLML6344TRPBF, ZVN4306GV uniquely balances 60 V blocking capability, 0.33 Ω on-resistance, and SOT223 thermal robustness - making it optimal for 12–48 V industrial and automotive power switches where voltage margin and board-level heat spreading are essential.

Availability

ZVN4306GV is available at Aetrix Electronics and suitable for DC-DC converters, automotive solenoid drivers, and industrial relay control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for ZVN4306GV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

ZVN4306GV belongs to Diodes' vertical DMOS power MOSFET product line, engineered for high-efficiency switching in automotive, industrial, and consumer power conversion systems where ruggedness and thermal performance are critical.

FAQ

Is ZVN4306GV suitable for logic-level gate drive?

No - ZVN4306GV has a gate-threshold voltage range of 1.3–3.0 V but is optimized for 10 V gate drive to achieve its specified 0.33 Ω R_DS(on). At 4.5 V, R_DS(on) rises to 0.45 Ω, increasing conduction loss significantly. It is not classified as a true logic-level MOSFET.

What is the thermal resistance junction-to-ambient for ZVN4306GV in SOT223?

The datasheet does not specify R_θJA directly, but with standard JEDEC 2-layer PCB layout (1 in² copper pad), typical R_θJA is ~120°C/W. With 2 in² copper and thermal vias under the drain tab, it improves to ~60°C/W - enabling 2.1 A continuous operation at +70°C ambient.

Does ZVN4306GV have avalanche capability?

Yes - it is rated for repetitive avalanche energy of 25 mJ and peak avalanche current of 1 A. This allows safe operation under inductive switching stress without external snubbers in properly designed circuits meeting the specified test conditions (V_DD ≤ 60 V, pulse width ≤ 10 µs).

Can ZVN4306GV replace older ZVN4306F or ZVN4306A variants?

Yes - ZVN4306GV is the green, halogen-free, RoHS-compliant revision of the ZVN4306 family. Pinout, electrical specs, and package dimensions are identical; only material content and marking differ. No redesign or requalification is required for drop-in replacement in existing layouts.

ZVN4306GVTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

ZVN4306GVTC FAQ

1.How can I place an order for ZVN4306GVTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN4306GVTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN4306GVTC reliable?

The price and inventory of ZVN4306GVTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN4306GVTC is usually 5 days.

3.What payment methods are accepted for ZVN4306GVTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN4306GVTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN4306GVTC?

ZVN4306GVTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN4306GVTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN4306GVTC?

For technical support, including ZVN4306GVTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN4306GVTC requirements.

6.How does Aetrix verify that ZVN4306GVTC is sourced from the original manufacturer or authorized distributors?

All ZVN4306GVTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN4306GVTC meets industry standards.

7.What is the process for return or replacement of ZVN4306GVTC?

All ZVN4306GVTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVN4306GVTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN4306GVTC part is unused and in its original packaging.

Return procedure for ZVN4306GVTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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