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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVN4310ASTZ

Name: ZVN4310ASTZ
Brand: Diodes Incorporated
SKU: ZVN4310ASTZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVN4310ASTZ

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: ZVN4310ASTZ.pdf

Description:: MOSFET N-CH 100V 900MA E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:3,700

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Product details

Overview

ZVN4310ASTZ from Diodes Incorporated is an N-channel enhancement-mode vertical DMOS FET rated for 100 V V_DS, 0.5 Ω R_DS(on) at V_GS = 10 V and I_D = 3 A, with 1.13 W practical power dissipation on PCB mounting. It serves as a low-voltage switching element in DC-DC converters, LED drivers, and load-switching circuits where compact TO-92 packaging and moderate current handling are required.

For engineers reviewing the ZVN4310ASTZ datasheet, ZVN4310ASTZ pinout, ZVN4310ASTZ application, or ZVN4310ASTZ equivalent, key selection criteria include verified R_DS(on) tolerance (0.36–0.65 Ω), gate threshold voltage range (1–3 V), pulsed drain current capability (12 A), thermal resistance to ambient (150 °C/W), and SPICE model availability for simulation validation.

Technical Context

This discrete MOSFET operates in enhancement mode with a vertically structured DMOS cell architecture, enabling higher breakdown voltage and lower on-resistance than planar equivalents in the same package. Its gate threshold voltage (1–3 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drive, while the 30 ns turn-off delay supports switching frequencies up to ~3 MHz in non-resonant topologies.

The device exhibits typical input capacitance (C_iss = 350 pF) and reverse transfer capacitance (C_rss = 30 pF) at V_DS = 25 V, supporting predictable gate drive design. Its 600 mS transconductance at V_DS = 25 V and I_D = 3 A confirms strong small-signal gain for analog switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - Withstands up to 100 V drain-source potential without breakdown under static conditions.
R_DS(on)	0.5 Ω max at V_GS = 10 V, I_D = 3 A - Defines conduction loss of ≤4.5 mW per mA of load current at rated gate drive.
I_D continuous	0.9 A at T_amb = 25°C - Maximum steady-state current with standard PCB copper area (1 inch²).
P_totp	1.13 W - Practical power dissipation limit with typical FR-4 PCB mounting, not derated.
V_GS(th)	1–3 V - Gate voltage range at which device begins conducting; enables direct interface with 3.3 V microcontrollers.
C_iss	350 pF - Input capacitance determines gate charge requirement and driver strength needed for 10–30 ns switching transitions.
t_d(off)	30 ns - Turn-off delay time measured with 50 Ω source impedance, critical for timing budget in high-frequency PWM control.

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-pin plastic case with standardized lead spacing and thermal pad-free construction.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side current path terminal	Connected to load supply rail; carries full switched current and must be routed with adequate trace width for 1 A continuous operation.
Gate (G)	Control electrode	High-impedance input requiring <20 nA leakage; sensitive to ESD and requires series resistor (≥10 Ω) for ringing suppression during fast switching.
Source (S)	Reference node and return path	Common connection point for gate drive reference and load return; must be tied directly to ground plane to minimize noise coupling into gate loop.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Turns on fully with 3.3 V or 5 V microcontroller outputs, eliminating need for level-shifting circuitry.
SPICE model availability	Enables accurate transient and thermal simulation in LTspice or PSpice before PCB layout, reducing prototype iterations.
Low C_rss (30 pF)	Minimizes Miller-induced gate oscillation and improves immunity to dv/dt-induced false turn-on in inductive loads.
12 A pulsed drain current	Supports short-duration surge loads such as motor startup or capacitor charging without thermal runaway under proper duty cycle control.
TO-92 mechanical compatibility	Direct drop-in replacement for legacy ZVN4310A and similar through-hole N-MOSFETs in existing designs using standard pick-and-place tooling.

Applications

LED Constant-Current Driver

Microcontroller-Based Load Switch

Use Scenario: Driving 1–3 white LEDs in series from a 12 V supply with PWM dimming at 1–5 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode return path; synchronized to MCU PWM output.

Use Value: 0.5 Ω R_DS(on) limits conduction loss to <0.5 W at 1 A, enabling passive cooling and >92% efficiency in 12 V → 9 V LED string configurations.

Use Scenario: Enabling/disabling a 500 mA sensor module powered from a 5 V rail in battery-operated IoT nodes.

IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load power gate controlled by GPIO pin.

Use Value: 1–3 V V_GS(th) ensures full turn-on with 3.3 V MCU I/O, while 20 nA I_GSS minimizes standby current drain below 1 µA.

DC-DC Buck Converter Low-Side Switch

Relay/Actuator Driver Interface

Use Scenario: Synchronous rectification in 5 V input, 3.3 V output buck converter operating at 500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous switch replacing Schottky diode to reduce conduction loss.

Use Value: 30 ns t_d(off) and 16 ns t_f support clean dead-time control, minimizing shoot-through risk when paired with complementary high-side driver.

Use Scenario: Driving 12 V, 200 mA coil of electromechanical relay from an ARM Cortex-M0+ GPIO.

IC Role / Device Role / Timing Role: Inductive load switch with integrated flyback path management via external diode.

Use Value: 100 V V_DS rating provides 2× safety margin over 12 V supply, preventing avalanche failure during relay coil de-energization transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVN4306ASTZ	V_DS = 60 V, R_DS(on) = 1.2 Ω (max), lower voltage rating and higher on-resistance	Suitable only for ≤48 V systems; higher conduction loss limits use in >500 mA continuous loads	Select when cost sensitivity outweighs voltage headroom and efficiency requirements in low-voltage consumer electronics.
FQP30N06L	V_DS = 60 V, R_DS(on) = 0.035 Ω (typ), TO-220 package, 30 A pulsed rating	Requires heatsink for >2 A loads; incompatible footprint; superior performance but over-specified for TO-92 space-constrained designs	Choose for high-current industrial power stages where thermal management infrastructure exists and board area permits larger package.

Compared with ZVN4310ASTZ, ZVN4306ASTZ trades voltage margin for cost in low-voltage applications, while FQP30N06L delivers dramatically lower R_DS(on) at the expense of TO-92 compatibility and thermal design simplicity-making ZVN4310ASTZ optimal for space-constrained, 100 V-tolerant, sub-1 A switching tasks.

Availability

ZVN4310ASTZ is available at Aetrix Electronics and suitable for LED drivers, microcontroller-peripheral interfaces, DC-DC converter synchronous rectifiers, and relay driver circuits requiring stable component supply across production lifecycles.

Supply support for ZVN4310ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for power management, signal integrity, and protection.

ZVN4310ASTZ belongs to Diodes' ZVN-series vertical DMOS FET product line, designed specifically for cost-sensitive, space-constrained linear and switching applications requiring robust 100 V capability in legacy-compatible through-hole packages.

FAQ

Is ZVN4310ASTZ suitable for 3.3 V logic-level gate drive?

Yes. With a gate threshold voltage range of 1–3 V and guaranteed turn-on at V_GS = 4.5 V (per typical ID(on) = 9 A at V_GS = 10 V), it achieves full enhancement using standard 3.3 V CMOS outputs. Measured R_DS(on) at V_GS = 5 V is 0.65 Ω max, confirming usable conduction at 3.3 V with appropriate current derating.

What is the maximum safe operating temperature for continuous use?

The junction temperature must not exceed +150°C. At ambient temperatures up to +70°C, continuous operation at 0.9 A requires ≥1 inch² of 2 oz copper on FR-4 to maintain junction rise within R_th(j-amb) × P_tot limits. Derating curves show 1.13 W practical dissipation drops to 0.75 W at +100°C ambient.

Does ZVN4310ASTZ have built-in ESD protection?

No. The datasheet specifies no integrated ESD protection structure. Gate-source leakage is rated at 20 nA at ±20 V, indicating a standard MOSFET gate oxide without robust HBM or CDM hardening. External 10 kΩ series gate resistor and TVS diode between G–S are recommended for board-level ESD resilience.

Can ZVN4310ASTZ replace ZVN4310A in existing designs?

Yes. ZVN4310ASTZ is a direct form-fit-function replacement for ZVN4310A, sharing identical TO-92 package dimensions, pinout (D-G-S), absolute maximum ratings, and electrical characteristics. The "STZ" suffix denotes tape-and-reel packaging and updated manufacturing process, with no functional or parametric deviation from the original issue 2 specification.

ZVN4310ASTZ Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 850mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZVN4310ASTZ FAQ

1.How can I place an order for ZVN4310ASTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN4310ASTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN4310ASTZ reliable?

The price and inventory of ZVN4310ASTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN4310ASTZ is usually 5 days.

3.What payment methods are accepted for ZVN4310ASTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN4310ASTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN4310ASTZ?

ZVN4310ASTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN4310ASTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN4310ASTZ?

For technical support, including ZVN4310ASTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN4310ASTZ requirements.

6.How does Aetrix verify that ZVN4310ASTZ is sourced from the original manufacturer or authorized distributors?

All ZVN4310ASTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN4310ASTZ meets industry standards.

7.What is the process for return or replacement of ZVN4310ASTZ?

All ZVN4310ASTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZVN4310ASTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN4310ASTZ part is unused and in its original packaging.

Return procedure for ZVN4310ASTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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