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Diodes Incorporated ZVN4424GTC

Part No.:
ZVN4424GTC
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixZVN4424GTC.pdf
Description:
MOSFET N-CH 240V 500MA SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,988

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Product details

Overview

ZVN4424G from Diodes Incorporated is an N-channel enhancement-mode vertical DMOSFET in SOT223 package, rated for 240 V drain-source breakdown voltage, 500 mA continuous drain current at +25°C, and 4.3 Ω RDS(ON) at VGS = 2.5 V. It serves as a high-voltage, low-threshold switching device in telecom hook-switch circuits and battery-powered DC-DC converters.

For engineers reviewing the ZVN4424G datasheet, ZVN4424G pinout, ZVN4424G application, or ZVN4424G equivalent, key selection criteria include its 240 V BVDSS rating, sub-2 V gate threshold, 2.5 W power dissipation at TA = +25°C, fast switching times (tD(OFF) ≤ 60 ns), and SOT223 thermal performance in space-constrained power management designs.

Technical Context

This MOSFET employs vertical DMOS architecture to achieve high voltage blocking with low on-resistance. Its 0.8–1.8 V gate threshold enables direct drive from 3.3 V logic and supports low-power control in battery-operated systems.

Dynamic parameters-including 110–200 pF input capacitance, 15–25 pF output capacitance, and 40–60 ns turn-off delay-are optimized for efficient switching in 100 kHz–1 MHz DC-DC topologies where gate drive loss and switching transition time critically impact efficiency.

Key Specifications

ParameterValue and Actual Design Meaning
BVDSS240 V - Withstands up to 240 V drain-source voltage before avalanche conduction, suitable for 190 V DC bus applications.
RDS(ON)4.3 Ω @ VGS = 2.5 V - Enables full enhancement with standard 3.3 V microcontroller GPIO, minimizing conduction loss in low-power switches.
ID (continuous)500 mA @ TA = +25°C - Supports load switching in telecom line interface cards and portable equipment without forced cooling.
tD(OFF)40–60 ns - Reduces switching transition time in high-frequency DC-DC converters, lowering overlap loss during PWM operation.
PTOT2.5 W @ TA = +25°C - Delivers usable power handling in SOT223 footprint with PCB copper pour, typical for board-level power routing.
VGS(TH)0.8–1.8 V - Ensures reliable turn-on across temperature and process variation using low-voltage logic drivers.
Ciss110–200 pF - Determines gate charge requirement (~2.5 nC typical) for driving with minimal gate resistor sizing.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, thermally enhanced plastic case with exposed drain pad. Molded "Green" compound (UL 94V-0), lead-free, halogen- and antimony-free.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current-carrying terminalConnected to exposed metal tab; primary thermal path to PCB copper pour; electrically tied to internal MOSFET drain structure.
Source (S)Reference node for gate control and current returnProvides low-impedance return path; used as ground reference for gate drive in low-side switch configuration.
Gate (G)Control electrodeHigh-impedance input requiring <100 nA leakage; driven by logic-level signal to modulate channel conductivity.

Key Features

FeatureDesign Value
240 V BVDSS ratingEnables use in 190 V telecom line interfaces and industrial HV DC-DC stages without derating or series stacking.
4.3 Ω RDS(ON) @ VGS = 2.5 VPermits direct drive from 3.3 V MCU outputs, eliminating level-shifter circuitry in battery-powered hook-switch modules.
Fast switching (tD(OFF) ≤ 60 ns)Reduces energy loss during transitions in 500 kHz flyback or buck converters, improving system efficiency above 85%.
RoHS 3 & "Green" compliantMeets EU 2015/863/EU requirements with Br+Cl <1500 ppm and Sb <1000 ppm-supports eco-design certification for telecom equipment.

Applications

Telecom Hook SwitchBattery-Powered DC-DC Converter

Use Scenario: Electronic replacement of mechanical hook switches in analog telephone line interface cards.

IC Role / Device Role / Timing Role: Low-side switch controlling loop current flow between tip/ring and battery feed.

Use Value: 240 V BVDSS withstands ringing voltage surges; 4.3 Ω RDS(ON) limits voltage drop to <2.2 V at 500 mA, preserving talk battery life.

Use Scenario: High-efficiency step-down converter in portable medical monitors powered by single Li-ion cell.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch in 300 kHz buck topology.

Use Value: 60 ns tD(OFF) and 25 ns tF minimize dead-time losses; 2.5 W PTOT allows 400 mW dissipation with 20°C/W PCB thermal resistance.

Earth Recall CircuitElectronic Dialing Switch

Use Scenario: Isolation and activation of earth-leakage detection path in PBX line cards.

IC Role / Device Role / Timing Role: High-voltage isolation switch enabling controlled grounding of line pair during fault test cycles.

Use Value: 10 μA IDSS at 240 V ensures negligible leakage current during standby, meeting ITU-T K.20 surge immunity requirements.

Use Scenario: Pulse generation for DTMF tone dialing in legacy VoIP gateways.

IC Role / Device Role / Timing Role: Fast-turning switch controlling current pulses through tone generator transformer windings.

Use Value: 5 ns tR and 25 ns tF support clean 100 μs pulse edges required for accurate frequency synthesis without harmonic distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage low-threshold MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZVN4424FSame die, SOT23-3 package; RDS(ON) = 4.3 Ω @ VGS = 2.5 V but lower PTOT (1.25 W).Limited to <250 mA continuous current due to thermal constraints; unsuitable for 500 mA telecom loads.Select only when board space is critical and power dissipation remains below 0.6 W.
DMN24H3D5L240 V BVDSS, 3.5 Ω RDS(ON) @ VGS = 4.5 V, but VGS(TH) = 1.0–2.5 V; SOT223-3.Requires ≥4.5 V gate drive for optimal RDS(ON); less compatible with 3.3 V logic without level shift.Prefer when higher gate drive voltage is available and lower on-resistance justifies added complexity.

Compared with ZVN4424F and DMN24H3D5L, the ZVN4424G uniquely balances 240 V capability, 3.3 V logic compatibility, and 500 mA current handling in SOT223-making it the only option qualified for sustained telecom hook-switch duty without thermal derating.

Availability

ZVN4424G is available at Aetrix Electronics and suitable for telecom line interface cards, battery-powered medical monitors, and industrial DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for ZVN4424G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The ZVN4424G belongs to Diodes' high-voltage vertical DMOSFET product line, engineered specifically for telecom infrastructure, battery-powered instrumentation, and industrial power switching where logic-level drive and surge robustness are essential.

FAQ

What is the maximum continuous drain current for ZVN4424G at +70°C ambient?

At TA = +70°C, the continuous drain current is derated to 350 mA. This is calculated using the 2.5 W power dissipation limit and the thermal resistance of SOT223 (typically 100°C/W junction-to-ambient with minimal copper), resulting in a 100°C junction rise that reduces safe current handling proportionally.

Is ZVN4424G suitable for automotive applications?

The ZVN4424GQ variant-not the base ZVN4424G-is AEC-Q101 qualified and PPAP capable. The standard ZVN4424G lacks automotive qualification documentation, temperature cycling validation, and IATF 16949 traceability, so it is not recommended for automotive ECUs or ADAS modules.

How does the gate threshold voltage affect drive circuit design?

With VGS(TH) spanning 0.8–1.8 V, the ZVN4424G turns on fully at 2.5 V, allowing direct connection to 3.3 V microcontrollers. However, gate drive must source ≥10 mA peak to charge Ciss rapidly; a 10 Ω series resistor is typical to damp ringing without compromising tR/tF.

Can ZVN4424G be used in linear (analog) mode for voltage regulation?

No-it is not characterized or guaranteed for linear operation. The Safe Operating Area (SOA) curve is not provided in the datasheet, and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of RDS(ON) and limited SOA at high VDS/ID combinations.

ZVN4424GTC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
240 V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
5.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±40V
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

ZVN4424GTC FAQ

1.How can I place an order for ZVN4424GTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN4424GTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN4424GTC reliable?

The price and inventory of ZVN4424GTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN4424GTC is usually 5 days.

3.What payment methods are accepted for ZVN4424GTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN4424GTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN4424GTC?

ZVN4424GTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN4424GTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN4424GTC?

For technical support, including ZVN4424GTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN4424GTC requirements.

6.How does Aetrix verify that ZVN4424GTC is sourced from the original manufacturer or authorized distributors?

All ZVN4424GTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN4424GTC meets industry standards.

7.What is the process for return or replacement of ZVN4424GTC?

All ZVN4424GTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVN4424GTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN4424GTC part is unused and in its original packaging.

Return procedure for ZVN4424GTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZVN4424GTC Tags

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