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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVN4525E6TC

Name: ZVN4525E6TC
Brand: Diodes Incorporated
SKU: ZVN4525E6TC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVN4525E6TC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6

Datasheet:: ZVN4525E6TC.pdf

Description:: MOSFET N-CH 250V 230MA SOT23-6

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Product details

Overview

ZVN4525E6 from Diodes Incorporated is a 250V N-channel enhancement-mode MOSFET in SOT26 package, rated for 230mA continuous drain current at 25°C, with R_DS(ON) = 5.6Ω (typ) at V_GS = 10V and V_GS(th) = 1.4V (typ). It delivers fast switching (t_d(on) = 1.25ns, t_f = 3.5ns), low gate charge (Q_g = 2.6nC typ), and integrated body diode (V_SD = 0.97V at I_S = 360mA), enabling use in telecom call routers and solid-state relays.

For engineers reviewing the ZVN4525E6 datasheet, ZVN4525E6 pinout, ZVN4525E6 application, or ZVN4525E6 equivalent, key selection considerations include its 250V BVDSS rating, low 1.4V threshold voltage for logic-level drive compatibility, 8.5Ω max RDS(ON) at 10V, thermal resistance of 113°C/W (J-A), and SOT26 three-terminal configuration optimized for high-voltage switching in space-constrained telecom interfaces.

Technical Context

This MOSFET operates as a single N-channel switch with enhancement-mode gate control, requiring positive V_GS to conduct. Its 250V breakdown voltage supports isolation in telecom line interface circuits, while low 1.4V typical V_GS(th) enables direct drive from 3.3V or 5V logic without level-shifting.

Dynamic performance is defined by 72pF input capacitance (C_iss), 3.6pF reverse transfer capacitance (C_rss), and 2.6nC total gate charge - parameters that jointly determine switching loss and drive strength requirements in high-frequency relay drivers and hook-switch controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	250V - Withstands up to 250V drain-source voltage before avalanche conduction, suitable for telecom line-side isolation.
RDS(ON) @ VGS=10V	5.6Ω (typ), 8.5Ω (max) - Determines on-state power loss (P = I²R) at 230mA; enables <150mW conduction loss in low-current switching.
VGS(th)	0.8–1.8V - Ensures reliable turn-on with 3.3V microcontroller GPIOs; avoids partial enhancement in marginally biased circuits.
Qg	2.6–3.65nC - Defines minimum gate driver current needed for nanosecond-scale switching; reduces drive circuit complexity vs. higher-Qg MOSFETs.
t_f	3.5ns - Enables clean, fast turn-off critical for minimizing cross-conduction in half-bridge or relay emulation topologies.
RθJA	113°C/W - Specifies junction-to-ambient thermal resistance on standard 25mm×25mm FR4 PCB; sets maximum allowable power dissipation at ambient temperature.
trr	186–260ns - Body diode recovery time impacts efficiency in inductive load switching; limits maximum operating frequency in flyback or snubberless designs.

Pinout & Package

Package: SOT26 - surface-mount, 6-pin leaded plastic package with exposed drain pad; dimensions per Diodes outline SOT26 (A2 = 1.10mm, D = 3.00mm, E = 2.80mm); RoHS-compliant, halogen-free, 0.015g weight.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Current return path for channel conduction	Connected to system ground or low-side reference; ties to internal body diode cathode.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring minimal drive current; sensitive to ESD; must be actively pulled low to ensure off-state.
Pin 3 (Drain)	Main current-carrying terminal (high-side connection)	Exposed metal pad on bottom surface serves as primary heat sink and high-voltage node; connects to telecom line or HV rail.
Pin 4 (Source)	Redundant source connection	Parallel path to Pin 1 to reduce source inductance and improve switching stability in high-dI/dt applications.
Pin 5 (Drain)	Redundant drain connection	Parallel path to Pin 3 to lower drain inductance and enhance voltage transient immunity in telecom surge environments.
Pin 6 (Gate)	Redundant gate connection	Provides additional gate routing flexibility and lowers gate loop inductance for consistent nanosecond-scale edge control.

Key Features

Feature	Design Value
250V Drain-Source Breakdown	Enables direct integration into 100–200V telecom line interface circuits without external voltage clamping.
Low 1.4V Typical Threshold Voltage	Permits full enhancement using standard 3.3V/5V logic outputs-eliminates need for gate driver ICs in low-power hook-switch designs.
Fast 3.5ns Fall Time	Minimizes switching transition losses in repetitive pulse applications such as dialing signal generation and call routing control.
Integrated Body Diode with 0.97V VF	Supports bidirectional current handling in solid-state relay configurations without external freewheeling diodes.
SOT26 Package with Exposed Drain Pad	Provides enhanced thermal dissipation (RθJA = 65°C/W under pulsed conditions) and mechanical robustness for automated assembly in telecom modules.

Applications

Earth Recall and Dialing Switches

Electronic Hook Switches

Use Scenario: Replacing electromechanical switches in PSTN line interface cards to generate earth recall signals and rotary/pulse dialing waveforms.

IC Role / Device Role / Timing Role: High-voltage N-channel switch controlling current flow through telephone line transformer primaries.

Use Value: Eliminates contact wear and bounce; supports >1M operation cycles with sub-microsecond timing accuracy for pulse dialing compliance.

Use Scenario: Detecting and controlling on-hook/off-hook states in VoIP analog telephone adapters (ATAs) and IP phones.

IC Role / Device Role / Timing Role: Low-threshold MOSFET acting as line supervision switch, interfacing between codec and two-wire telephone line.

Use Value: Enables direct MCU GPIO control without level shifters; maintains <10μA leakage (IDSS ≤ 500nA) to avoid false off-hook detection.

High-Voltage Power MOSFET Drivers

Solid-State Relays

Use Scenario: Driving gate terminals of higher-power MOSFETs or IGBTs in telecom power supplies and line feed circuits.

IC Role / Device Role / Timing Role: Level-shifting buffer stage providing fast, low-inductance gate drive with controlled dV/dt.

Use Value: 2.6nC Qg and 3.5ns tf allow precise timing control of downstream power devices; 250V rating isolates logic from HV domains.

Use Scenario: Replacing mechanical relays in PBX systems, alarm panels, and industrial control I/O modules.

IC Role / Device Role / Timing Role: Bidirectional switching element leveraging integrated body diode for AC load control in zero-crossing or random-phase SSR topologies.

Use Value: 1.1A continuous source current (IS) and 186ns trr support 50/60Hz AC switching with <1% THD; SOT26 footprint enables compact dual-channel SSR designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVN4525E6TA	Same die, identical electrical specs, SOT26 package, but supplied in 3,000-unit 7-inch reel (vs. 10,000-unit 13-inch reel for ZVN4525E6TC)	No functional difference; suited for prototyping or low-volume production where smaller reels reduce inventory holding cost	Select ZVN4525E6TA for evaluation or pilot builds; ZVN4525E6TC preferred for high-volume manufacturing due to larger reel quantity and lower unit handling cost
ZVP4525E6	Complementary P-channel device: BVDSS = –250V, VGS(th) = –1.4V (typ), RDS(ON) = 11Ω (typ) at VGS = –10V	Used in high-side switching or complementary pair configurations (e.g., push-pull line drivers), not direct replacement	Choose ZVP4525E6 only when designing symmetrical high-voltage switch stages requiring matched N/P characteristics; not interchangeable in existing N-channel layouts

Compared with ZVN4525E6TA, the ZVN4525E6TC offers identical performance with optimized packaging for volume production; versus ZVP4525E6, it provides opposite channel polarity and cannot substitute in unidirectional N-channel roles - selection depends strictly on layout constraints and procurement scale.

Availability

ZVN4525E6TC is available at Aetrix Electronics and suitable for telecom call routing, electronic hook-switch implementation, and solid-state relay design requiring stable component supply, RoHS-compliant packaging, and traceable sourcing for industrial and communications equipment.

Supply support for ZVN4525E6TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

ZVN4525E6 belongs to Diodes' high-voltage MOSFET product line, engineered specifically for telecom infrastructure, line interface units, and solid-state switching applications demanding reliability at 250V with low gate drive requirements.

FAQ

What is the maximum continuous drain current for ZVN4525E6TC at 70°C ambient?

The maximum continuous drain current is 183mA at TA = +70°C, derated from 230mA at +25°C per the linear derating factor of 8.8mW/°C. This value assumes mounting on a 25mm × 25mm FR4 PCB with 1oz copper in still air, as specified in Note 5 of the datasheet.

Can ZVN4525E6TC be driven directly by a 3.3V microcontroller GPIO?

Yes - with a typical VGS(th) of 1.4V and maximum of 1.8V, the device fully enhances at 3.3V gate drive. RDS(ON) remains ≤8.5Ω at VGS = 4.5V (5.9Ω typ), ensuring low conduction loss even with marginal overdrive, making it compatible with standard 3.3V logic without external level shifting.

Does ZVN4525E6TC include an integrated body diode, and what are its key parameters?

Yes - it features an integrated body diode with forward voltage VSD = 0.97V at IS = 360mA and TJ = +25°C, reverse recovery time trr = 186–260ns, and reverse recovery charge Qrr = 34–48nC. These values are measured with IF = 360mA and di/dt = 100A/μs, supporting efficient operation in inductive load switching.

Is ZVN4525E6TC qualified for automotive applications?

No - the device is not AEC-Q101 qualified. While Diodes offers automotive-grade variants in the same family (e.g., ZVN4525E6Q), the ZVN4525E6TC is intended for industrial and telecom applications. For automotive use, customers must contact Diodes directly to request PPAP-capable, IATF 16949-manufactured alternatives.

ZVN4525E6TC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.4V, 10V

Rds On (Max) @ Id, Vgs:: 8.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 3.65 nC @ 10 V

Vgs (Max):: ±40V

Input Capacitance (Ciss) (Max) @ Vds:: 72 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-6

ZVN4525E6TC FAQ

1.How can I place an order for ZVN4525E6TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVN4525E6TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVN4525E6TC reliable?

The price and inventory of ZVN4525E6TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVN4525E6TC is usually 5 days.

3.What payment methods are accepted for ZVN4525E6TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVN4525E6TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVN4525E6TC?

ZVN4525E6TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVN4525E6TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVN4525E6TC?

For technical support, including ZVN4525E6TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVN4525E6TC requirements.

6.How does Aetrix verify that ZVN4525E6TC is sourced from the original manufacturer or authorized distributors?

All ZVN4525E6TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVN4525E6TC meets industry standards.

7.What is the process for return or replacement of ZVN4525E6TC?

All ZVN4525E6TC units undergo pre-shipment inspection (PSI). If there is an issue with ZVN4525E6TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVN4525E6TC part is unused and in its original packaging.

Return procedure for ZVN4525E6TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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