Diodes Incorporated ZVN4525GTC

Overview

ZVN4525GTC from Diodes Incorporated is a 250V N-channel enhancement-mode MOSFET in SOT223 (Type DN) package, rated for 310mA continuous drain current at 25°C, with R_DS(on) = 8.5Ω @ V_GS = 10V and V_GS(th) = 0.8–1.8V. It delivers low gate drive requirements and fast switching (t_d(on) = 1.25ns, t_f = 3.5ns), enabling use in telecom call routers and solid-state relays where high-voltage isolation and thermally stable operation are critical.

For engineers reviewing the ZVN4525GTC datasheet, ZVN4525GTC pinout, ZVN4525GTC application, or ZVN4525GTC equivalent, key selection criteria include verified 250V BVDSS rating, body diode forward voltage ≤0.97V at 360mA, thermal resistance R_θJA = 63°C/W on standard FR4, and RoHS-compliant matte tin terminations - all confirmed per DS33383 Rev. 3-2.

Technical Context

This MOSFET operates as a single high-voltage switching element with fixed threshold control logic, supporting DC or pulsed operation up to 1.44A peak drain current. Its enhancement-mode architecture requires active gate biasing above V_GS(th), and its integrated body diode enables bidirectional conduction in relay-style topologies.

The device uses planar DMOS technology with optimized channel geometry to achieve low R_DS(on) while maintaining 250V breakdown margin. Thermal performance is characterized under two PCB mounting conditions: 63°C/W (25mm × 25mm 1oz Cu) and 26°C/W (short-duration transient), confirming suitability for space-constrained, moderate-power telecom interfaces.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, molded plastic with UL 94V-0 rating, 0.112g mass, matte tin annealed terminations solderable per MIL-STD-202 Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with ZVN4525FTA, ZVN4525GTC offers higher volume efficiency per reel; compared with ZVP4525G, it provides lower R_DS(on) and faster switching but requires low-side placement - critical for minimizing gate drive complexity in telecom interface designs.

Availability

ZVN4525GTC is available at Aetrix Electronics and suitable for telecom call routers, electronic hook switches, solid-state relays, and high-voltage power MOSFET drivers requiring stable component supply across design-in, qualification, and production phases.

Supply support for ZVN4525GTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The ZVN4525G series belongs to Diodes' high-voltage MOSFET product line, engineered specifically for telecom infrastructure, industrial controls, and solid-state switching applications demanding reliability at 250V operating potential.

FAQ

What is the maximum continuous drain current for ZVN4525GTC at 70°C ambient?

The maximum continuous drain current is 248mA at TA = +70°C, as specified in the Absolute Maximum Ratings table (DS33383 Rev. 3-2, page 2). This derating reflects thermal limitations of the SOT223 package on standard FR4 PCBs and must be applied when ambient exceeds 25°C to maintain junction temperature below 150°C.

Is ZVN4525GTC suitable for automotive applications?

ZVN4525GTC is not qualified to AEC-Q101 and lacks PPAP documentation or IATF 16949 manufacturing certification per Diodes' product definitions. For automotive use, engineers must contact Diodes directly to evaluate qualified alternatives such as the AEC-Q101-compliant DMT4025LPS series.

How does the body diode performance affect solid-state relay designs?

The body diode has V_SD ≤ 0.97V at 360mA and t_rr = 186–260ns, enabling efficient freewheeling of inductive loads without external diodes. However, its reverse recovery charge (Q_rr = 34–48nC) must be accounted for in snubber design to prevent voltage overshoot during turn-off in relay-equivalent topologies.

Can ZVN4525GTC be used with 3.3V microcontroller GPIOs?

Yes - with V_GS(th) as low as 0.8V and typical R_DS(on) = 5.6Ω at V_GS = 4.5V, the device achieves full enhancement using 3.3V logic. At 3.3V gate drive, R_DS(on) increases to ~6.4Ω (per datasheet), still supporting ≤310mA with acceptable conduction loss in low-duty-cycle telecom switching.