Diodes Incorporated ZVP0545GTC

Overview

ZVP0545G from Diodes Incorporated is a P-channel enhancement-mode vertical DMOS FET in SOT223 package, rated for -450 V drain-source voltage and 150 Ω R_DS(ON) at V_GS = -10 V, delivering -75 mA continuous drain current at +25°C - used in high-voltage power management circuits such as offline AC-DC auxiliary supplies and LED driver bias rails.

For engineers reviewing the ZVP0545G datasheet, ZVP0545G pinout, ZVP0545G application, or ZVP0545G equivalent, key selection criteria include verified high-voltage blocking capability (-450 V), low-leakage off-state performance (IDSS ≤ -2 µA at -360 V), thermal stability across -55°C to +150°C, and SOT223 package compatibility with board-level thermal management in space-constrained industrial power stages.

Technical Context

This MOSFET employs vertical DMOS architecture optimized for high-voltage, low-current switching with gate threshold voltage ranging from -1.5 V to -4.5 V and normalized R_DS(ON) variation under junction temperature stress (±20% from -55°C to +150°C). Its transconductance of 40 mS at V_DS = -25 V supports stable gain in linear-regulator or current-sense configurations.

Dynamic parameters include C_iss = 120 pF, C_oss = 20 pF, and Crss = 5 pF at V_DS = -25 V, enabling predictable turn-on/turn-off timing (t_D(ON) ≤ 10 ns, t_F ≤ 20 ns) in low-power, high-side switch applications where gate drive energy and EMI control are critical.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal configuration with exposed drain pad for thermal conduction. Molded plastic body meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Compared with ZVP0545G, both alternatives sacrifice -450 V blocking capability for lower R_DS(ON) and smaller packages - making them unsuitable for legacy high-voltage auxiliary supply designs but viable for cost-optimized, low-voltage replacements where board space and conduction loss dominate.

Availability

ZVP0545G is available at Aetrix Electronics and suitable for offline auxiliary power supplies, LED driver bias rails, industrial sensor interfaces, and programmable logic controller input stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZVP0545G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

ZVP0545G belongs to Diodes' high-voltage discrete MOSFET product line, engineered specifically for energy-efficient, space-constrained auxiliary power and biasing functions in industrial, lighting, and automation equipment.

FAQ

Is ZVP0545G recommended for new designs?

No - Diodes Incorporated explicitly states "ZVP0545G IS NOT RECOMMENDED FOR NEW DESIGNS" in the datasheet. It remains available for existing production and legacy support, but engineers should consult Diodes for qualified replacements like the ZVP4525G or AP2311WNG for new projects requiring similar high-voltage P-channel functionality.

What is the maximum safe operating temperature for ZVP0545G?

ZVP0545G has a specified junction temperature range of -55°C to +150°C. Its absolute maximum power dissipation is 2 W at +25°C ambient, derating linearly to zero at +150°C case temperature. Thermal design must ensure junction temperature stays within this limit using appropriate copper area and thermal vias under the exposed drain pad.

Can ZVP0545G be used in linear (analog) mode?

Yes - its SOA curve (Figure 12) confirms safe operation in linear mode for short pulses (e.g., PW ≤ 10 ms at V_DS = -25 V, I_D = -75 mA), and its gate threshold spread (-1.5 V to -4.5 V) allows predictable turn-on behavior in analog current regulation. However, sustained linear operation requires careful thermal management due to R_DS(ON) temperature coefficient.

Does ZVP0545G have integrated ESD protection?

No - the datasheet does not specify on-chip ESD protection diodes. Gate-source leakage (IGSS ≤ 20 nA) and absence of HBM/CDM ratings indicate external protection (e.g., series gate resistor + TVS) is required in handling and circuit layout to prevent damage from electrostatic discharge during assembly or field operation.