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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVP1320FTC

Name: ZVP1320FTC
Brand: Diodes Incorporated
SKU: ZVP1320FTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVP1320FTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: ZVP1320FTC.pdf

Description:: MOSFET P-CH 200V 35MA SOT23-3

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Product details

Overview

ZVP1320FTC from Diodes Incorporated is a 200V P-channel enhancement-mode vertical DMOS FET in SOT23 package, designed for high-voltage load switching and level-shifting circuits. It delivers R_DS(on) ≤ 80 Ω at V_GS = −10 V, supports −35 mA continuous drain current, −200 V drain-source breakdown voltage, and operates across −55 °C to +150 °C for automotive and industrial power management.

For engineers reviewing the ZVP1320FTC datasheet, ZVP1320FTC pinout, ZVP1320FTC application, or ZVP1320FTC equivalent, key selection criteria include its AEC-Q101 qualification, low gate threshold (−1.5 to −3.5 V), 350 mW power dissipation, and SOT23 footprint compatibility with space-constrained HV bias and signal isolation designs.

Technical Context

This P-channel MOSFET uses vertical DMOS architecture to achieve high voltage blocking (−200 V V_DSS) with low gate charge and fast switching-t_D(on)/t_r/t_D(off)/t_f all ≤ 16 ns under −25 V V_DS, −50 mA I_D. Its −1.5 to −3.5 V V_GS(th) enables direct interface with 3.3 V or 5 V logic when used in high-side switch configurations.

The device is optimized for low-duty-cycle, low-current switching where thermal resistance (R_θJA = 357 °C/W) and leakage control (I_DSS ≤ −20 µA at −200 V, 25 °C) are critical. It is not intended for synchronous rectification or high-frequency PWM power stages due to R_DS(on) and capacitance limitations (C_iss = 50 pF, C_oss = 15 pF).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−200 V: Blocks up to 200 V reverse polarity DC in high-side switch or level-shift applications.
R_DS(on)	≤ 80 Ω @ V_GS = −10 V: Limits conduction loss to < 140 mW at −35 mA, suitable for bias/control loads-not power delivery.
I_D (cont)	−35 mA: Maximum steady-state current for signal-level switching, e.g., enabling HV rails or sensor biasing.
V_GS(th)	−1.5 to −3.5 V: Ensures turn-on with standard logic outputs; negative threshold avoids unintended conduction during power-up.
P_D	350 mW @ T_A = 25 °C: Requires minimal copper area (25 mm × 25 mm, 1 oz) for thermal management in ambient operation.
C_iss	50 pF @ V_DS = −25 V: Enables fast edge rates in low-power digital switching without excessive drive strength requirements.

Pinout & Package

Package: SOT23 - surface-mount plastic package with NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 rated, weight ≈ 0.001 g.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-voltage output node	Connected to −200 V rail or load return; carries switched current and sustains full V_DSS.
Source (S)	Reference terminal for gate control	Biased at higher potential than drain in high-side configuration; sets V_GS reference point.
Gate (G)	Control input	Receives negative voltage relative to source to turn on; high impedance (I_GSS ≤ ±20 nA) minimizes drive current demand.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22 standards.
"Green" RoHS-compliant construction	Halogen- and antimony-free molding compound; lead-free terminations meet JEDEC J-STD-020 Level 1.
Low I_DSS leakage	≤ −20 µA at −200 V and 25 °C ensures stable off-state in high-impedance bias networks over time.
Fast switching times	t_D(on)/t_r/t_D(off)/t_f ≤ 16 ns enables clean transitions in 1–10 MHz digital control signals.

Applications

High-Voltage Bias Switching

Automotive Sensor Interface

Use Scenario: Enabling a −100 V bias supply for photodiode or ion-sensor front-end amplifiers in portable test equipment.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by microcontroller GPIO; provides rail enable with < 100 ns transition fidelity.

Use Value: −200 V V_DSS and low I_DSS ensure stable bias integrity over temperature and lifetime without external protection diodes.

Use Scenario: Isolating CAN transceiver standby mode from battery rail in automotive body control modules.

IC Role / Device Role / Timing Role: Load switch managing V_CC to transceiver; activated only during wake-up to minimize quiescent current.

Use Value: AEC-Q101 qualification and −55 °C to +150 °C operation guarantee reliable enable/disable across vehicle thermal zones.

Level-Shifting Logic Interface

Industrial PLC Input Conditioning

Use Scenario: Translating 3.3 V microcontroller output to −12 V logic domain for legacy industrial communication ICs.

IC Role / Device Role / Timing Role: Inverting level shifter using source-follower or common-source topology with pull-up to negative rail.

Use Value: −1.5 to −3.5 V V_GS(th) allows full turn-on with 3.3 V logic swing; fast t_f = 16 ns preserves signal edge integrity.

Use Scenario: Providing isolated 24 V DC input detection with galvanic separation via optocoupler driver stage.

IC Role / Device Role / Timing Role: Low-current switch driving LED anode of AC/DC optocoupler; handles transient surges up to −200 V.

Use Value: 350 mW power rating and robust V_DSS eliminate need for series resistors or TVS clamping in Class I input circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVP2106A	V_DSS = −60 V, R_DS(on) = 12 Ω @ −10 V, I_D = −120 mA	Lower voltage rating; higher current capability; unsuitable for > −60 V rails	Select only if operating voltage ≤ −60 V and higher I_D is required.
DMN2016LFG-7	V_DSS = −20 V, R_DS(on) = 1.6 Ω @ −4.5 V, I_D = −3.8 A	Optimized for low-voltage, high-current logic-level switching-not HV replacement	Not interchangeable; use only in 3.3/5 V systems requiring sub-Ω R_DS(on).

Compared with ZVP2106A and DMN2016LFG-7, ZVP1320FTC uniquely supports −200 V blocking in SOT23 while maintaining AEC-Q101 compliance-making it irreplaceable for automotive and industrial HV bias switching where voltage margin and qualification are non-negotiable.

Availability

ZVP1320FTC is available at Aetrix Electronics and suitable for high-voltage bias switching, automotive sensor interface, and industrial PLC input conditioning requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for ZVP1320FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for automotive, industrial, and computing markets.

ZVP1320FTC belongs to Diodes' high-voltage P-channel MOSFET product line, engineered specifically for space-constrained, AEC-Q101-compliant switching in negative-rail bias, level-shifting, and signal isolation applications.

FAQ

Is ZVP1320FTC suitable for use in high-frequency PWM power conversion?

No. With R_DS(on) = 80 Ω and C_iss = 50 pF, ZVP1320FTC is not optimized for power-stage switching. Its 35 mA continuous current rating and 350 mW power dissipation limit usage to low-power control, bias, and signal-level functions-not energy transfer or motor drive applications.

What is the maximum safe gate-source voltage for ZVP1320FTC?

The absolute maximum V_GS is ±20 V per the datasheet. Exceeding this risks irreversible gate oxide damage. For reliable operation, keep V_GS between −10 V (full enhancement) and 0 V (off-state); avoid floating gate conditions using pull-down resistors in high-impedance drive scenarios.

Does ZVP1320FTC require a heatsink in typical operation?

No. At −35 mA and 80 Ω R_DS(on), power dissipation is ~98 mW-well below the 350 mW rating. With R_θJA = 357 °C/W, junction rise is ~35 °C above ambient on a minimal PCB pad layout, eliminating need for heatsinking in standard industrial or automotive ambient conditions.

Can ZVP1320FTC be used in linear (analog) amplifier configurations?

Not recommended. Its g_fs = 25 mS is specified only for switching conditions (V_DS = −15 V, I_D = −50 mA), and no small-signal parameters (e.g., output conductance, noise figure) are characterized. The device lacks linearity validation and thermal stability for analog gain stages.

ZVP1320FTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 35mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 350mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

ZVP1320FTC FAQ

1.How can I place an order for ZVP1320FTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVP1320FTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVP1320FTC reliable?

The price and inventory of ZVP1320FTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP1320FTC is usually 5 days.

3.What payment methods are accepted for ZVP1320FTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP1320FTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVP1320FTC?

ZVP1320FTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVP1320FTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVP1320FTC?

For technical support, including ZVP1320FTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP1320FTC requirements.

6.How does Aetrix verify that ZVP1320FTC is sourced from the original manufacturer or authorized distributors?

All ZVP1320FTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP1320FTC meets industry standards.

7.What is the process for return or replacement of ZVP1320FTC?

All ZVP1320FTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVP1320FTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVP1320FTC part is unused and in its original packaging.

Return procedure for ZVP1320FTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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