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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVP2106GTC

Name: ZVP2106GTC
Brand: Diodes Incorporated
SKU: ZVP2106GTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVP2106GTC

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ZVP2106GTC.pdf

Description:: MOSFET P-CH 60V 450MA SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZVP2106G from Diodes Incorporated is a 60V P-channel enhancement-mode vertical DMOSFET optimized for low R_DS(on) (5 Ω @ V_GS = −10 V) and fast switching (t_r = 5 ns, t_f = 15 ns), rated for −450 mA continuous drain current at +25°C in SOT223 package, and used in DC-DC converter high-side load switches.

For engineers reviewing the ZVP2106G datasheet, ZVP2106G pinout, ZVP2106G application, or ZVP2106G equivalent, key selection criteria include verified −60 V BVDSS, gate threshold range (−1.5 to −3.5 V), pulsed current capability (−4 A), thermal resistance (R_θJA ≈ 62.5°C/W), and RoHS-compliant matte tin terminal finish.

Technical Context

This P-channel MOSFET operates in enhancement mode with negative gate control logic, requiring V_GS ≤ −1.5 V to initiate conduction and fully enhancing near −10 V. Its vertical DMOS structure delivers low on-resistance while maintaining controlled capacitance profile (C_iss = 100 pF, C_oss = 60 pF).

Designed for unidirectional power switching, it supports source-follower or common-source configurations with gate drive compatible with standard logic-level controllers. Thermal performance is defined by 2 W total power dissipation and 0.112 g mass, enabling use in thermally constrained PCB layouts without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	−60 V: Maximum blocking voltage before avalanche onset; ensures safe operation in 48 V rail systems with margin.
RDS(on)	5 Ω @ VGS = −10 V, ID = −500 mA: Confirmed on-resistance under typical bias; determines I²R conduction loss in load switch stage.
ID (cont)	−450 mA @ TA = +25°C: Continuous DC current rating; defines maximum steady-state load handling at ambient temperature.
Qg / Crss	Not specified / 20 pF: Reverse transfer capacitance limits Miller-induced turn-off delay; critical for high-frequency PWM stability.
td(on)/tr	7 ns / 5 ns: Verified turn-on delay and rise time at VDD = −18 V, ID = −500 mA; enables >10 MHz switching in compact converters.
PTOT	2 W @ TA = +25°C: Total power dissipation limit; sets thermal design boundary for copper pour and trace width sizing.
VGS(th)	−1.5 to −3.5 V: Gate threshold spread confirmed at ID = −1 mA; informs minimum driver swing required for reliable turn-on.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-pin outline with exposed drain pad (Pin 4) for thermal conduction and mechanical anchoring. Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to positive rail in high-side switch configuration.
Pin 2 (Gate)	Control input	Receives negative-going logic signal; requires ≥−10 V swing for full enhancement and minimal RDS(on).
Pin 3 (Drain)	Power output	Switched load connection point; electrically tied to exposed pad (Pin 4) for thermal and current path integrity.
Pin 4 (Drain Pad)	Thermal & current return	Exposed metal pad soldered to PCB copper pour; primary heat extraction path and low-inductance current return.

Key Features

Feature	Design Value
Low R_DS(on)	5 Ω at −10 V gate drive reduces conduction loss to <1.1 mW at 450 mA, improving efficiency in battery-powered DC-DC stages.
Fast switching	7 ns turn-on delay + 5 ns rise time enables clean edge transitions in 1–5 MHz buck converter topologies.
Green compound	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IPC-1752A environmental compliance requirements.
Matte tin terminals	Lead-free, annealed matte tin over copper leadframe ensures MIL-STD-202 solderability and long-term intermetallic stability.

Applications

Load Switching

DC-DC Conversion

Use Scenario: Power sequencing in portable instrumentation where microcontroller GPIO controls 3.3 V or 5 V subsystem enable.

IC Role / Device Role / Timing Role: High-side P-channel switch isolating downstream circuitry during standby or fault conditions.

Use Value: Low 5 Ω R_DS(on) minimizes dropout voltage (<2.25 mV at 450 mA), preserving regulation margin across wide temperature range.

Use Scenario: Synchronous rectifier or high-side switch in non-isolated buck regulator for industrial sensor nodes.

IC Role / Device Role / Timing Role: Main power switch operating at 2 MHz with 5 ns rise time to reduce switching loss and EMI generation.

Use Value: Verified 100 pF C_iss and 20 pF Crss support stable gate drive with minimal external compensation in compact layouts.

USB Power Delivery

Automotive Body Control

Use Scenario: Overvoltage-protected 5 V/9 V/15 V power path management in USB PD sink applications.

IC Role / Device Role / Timing Role: Input protection switch placed between connector and PD controller, blocking reverse current and fault propagation.

Use Value: −60 V BVDSS provides 2× safety margin against transient surges up to ±30 V, meeting IEC 61000-4-5 Level 3.

Use Scenario: LED lighting control in automotive interior modules (map lights, courtesy lamps) with PWM dimming.

IC Role / Device Role / Timing Role: Low-duty-cycle load switch driven by CAN/LIN microcontroller outputs.

Use Value: −1.5 to −3.5 V V_GS(th) ensures robust turn-on even with degraded 12 V supply (down to 9 V), supporting cold-crank operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011LSD-13	R_DS(on) = 3.5 Ω @ −4.5 V; lower threshold (−0.5 to −1.2 V); SOT23-3 package	Higher drive compatibility with 3.3 V logic; unsuitable for >200 mA continuous due to thermal limits in smaller package	Select when gate drive voltage is limited to −4.5 V and current demand is ≤200 mA.
SI2301BDS-T1-GE3	R_DS(on) = 120 mΩ @ −4.5 V; SOT23-3; higher ID (−2.4 A) but larger die size increases Crss (35 pF)	Better conduction efficiency at low V_GS; slower switching (t_r = 12 ns) limits use above 500 kHz	Choose for high-current, low-frequency load switching where gate drive is fixed at −4.5 V.

Compared with DMN2011LSD-13 and SI2301BDS-T1-GE3, ZVP2106G offers superior voltage rating (−60 V vs. −20 V), thermal robustness via SOT223, and balanced switching speed for mid-frequency DC-DC designs-making it optimal where 48 V system compatibility and 2 W dissipation headroom are required.

Availability

ZVP2106G is available at Aetrix Electronics and suitable for DC-DC converters, load switches, and USB power delivery circuits requiring stable component supply, extended temperature operation (−55°C to +150°C), and RoHS/Green compliance.

Supply support for ZVP2106G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

ZVP2106G belongs to Diodes' vertical DMOS power MOSFET product line, engineered specifically for high-efficiency, space-constrained power management in consumer, industrial, and automotive subsystems.

FAQ

What is the maximum safe operating voltage for ZVP2106G in continuous DC blocking?

The absolute maximum drain-source voltage (BVDSS) is −60 V, tested at ID = −1 mA with VGS = 0 V. Operation beyond this rating risks avalanche breakdown and irreversible device failure. Derating is recommended for reliability in systems with transients; sustained operation should remain ≤−48 V in 48 V nominal rails.

Can ZVP2106G be driven directly from a 3.3 V microcontroller GPIO?

No-ZVP2106G requires VGS ≤ −1.5 V to begin conduction and achieves full enhancement only near −10 V. A 3.3 V GPIO cannot generate the necessary negative gate voltage. A dedicated gate driver or level-shifting circuit (e.g., charge pump or complementary transistor stage) is mandatory for logic-level control.

Is ZVP2106G qualified for automotive applications per AEC-Q101?

ZVP2106G is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing-none of which apply to this part number. For automotive use, contact Diodes Incorporated for qualified alternatives such as the DMP2035UQ.

How does the SOT223 package affect thermal performance compared to SOT23?

The SOT223 package provides ~3× higher thermal conductivity than SOT23 due to its larger copper leadframe and exposed drain pad. With RθJA ≈ 62.5°C/W (vs. >200°C/W for SOT23), ZVP2106G sustains 2 W dissipation at +25°C ambient-enabling use in higher-power load switches without heatsinking.

ZVP2106GTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 100 pF @ 18 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

ZVP2106GTC FAQ

1.How can I place an order for ZVP2106GTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVP2106GTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVP2106GTC reliable?

The price and inventory of ZVP2106GTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP2106GTC is usually 5 days.

3.What payment methods are accepted for ZVP2106GTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP2106GTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVP2106GTC?

ZVP2106GTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVP2106GTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVP2106GTC?

For technical support, including ZVP2106GTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP2106GTC requirements.

6.How does Aetrix verify that ZVP2106GTC is sourced from the original manufacturer or authorized distributors?

All ZVP2106GTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP2106GTC meets industry standards.

7.What is the process for return or replacement of ZVP2106GTC?

All ZVP2106GTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVP2106GTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVP2106GTC part is unused and in its original packaging.

Return procedure for ZVP2106GTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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