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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVP2110ASTOA

Name: ZVP2110ASTOA
Brand: Diodes Incorporated
SKU: ZVP2110ASTOA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVP2110ASTOA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: ZVP2110ASTOA.pdf

Description:: MOSFET P-CH 100V 230MA E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:3,488

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Product details

Overview

ZVP2110ASTOA from Zetex Semiconductors (now Diodes Incorporated) is a P-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for -100 V V_DS, 8 Ω R_DS(on) at V_GS = -10 V, and -750 mA continuous on-state drain current. It operates across -55 °C to +150 °C and is used in low-power DC-DC converter load switches and battery protection circuits.

For engineers reviewing the ZVP2110ASTOA datasheet, ZVP2110ASTOA pinout, ZVP2110ASTOA application, or ZVP2110ASTOA equivalent, key selection criteria include verified gate threshold voltage (-1.5 to -3.5 V), pulsed drain current capability (-3 A), thermal resistance (R_θJA ≈ 179 °C/W), and TO-92 mechanical compatibility with legacy E-Line 3-421 footprint.

Technical Context

This device employs vertical DMOS architecture optimized for high-voltage blocking and stable threshold behavior over temperature. Its negative gate-source control enables high-side switching without level-shifting circuitry, and its low input capacitance (C_iss = 100 pF) supports fast turn-on with minimal drive power.

The FET exhibits well-defined saturation characteristics below -10 V V_GS, with R_DS(on) remaining stable across -40 °C to +125 °C. Gate leakage (I_GSS ≤ 20 nA) and zero-gate-voltage leakage (I_DSS ≤ -100 µA at -80 V, 125 °C) confirm suitability for battery-critical hold-off applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum reverse drain-source voltage before avalanche breakdown
R_DS(on)	8 Ω @ V_GS = -10 V, I_D = -375 mA - On-resistance determines conduction loss in linear or saturated operation
V_GS(th)	-1.5 to -3.5 V @ I_D = -1 mA - Threshold range defines minimum gate drive needed for reliable turn-on
I_D(on)	-750 mA @ V_DS = -25 V, V_GS = -10 V - Confirmed continuous on-state current under specified bias
C_iss	100 pF @ V_DS = -25 V, V_GS = 0 V - Input capacitance affects gate drive timing and switching loss
t_d(on)	7 ns @ V_DD ≈ -25 V, I_D = -375 mA - Turn-on delay time measured with 50 Ω source impedance
P_tot	700 mW @ T_amb = 25 °C - Absolute maximum power dissipation in free-air conditions

Pinout & Package

Package: TO-92 (E-Line 3-421 compatible), through-hole, 3-terminal plastic case with standard D-G-S pin assignment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side current return path	Connected to load supply rail; withstands full -100 V reverse potential
Gate (G)	Voltage-controlled switch terminal	Receives negative gate drive relative to source; requires no current drive
Source (S)	Reference node for gate control	Bonded to PCB ground or system common; defines V_GS reference point

Key Features

Feature	Design Value
Vertical DMOS structure	Enables -100 V blocking with compact TO-92 footprint and reduced parasitic inductance
Enhancement-mode operation	Ensures default-OFF state; eliminates need for pull-down resistors in standby
Low C_iss/C_oss ratio (100/35 pF)	Improves switching efficiency in high-frequency (<1 MHz) DC-DC topologies
Stable V_GS(th) over temperature	Threshold shift < ±0.5 V from -40 °C to +125 °C supports robust gate drive design
Rated for 150 °C junction operation	Validates use in sealed enclosures or thermally constrained industrial modules

Applications

Battery Protection Circuit

Low-Voltage DC-DC Converter

Use Scenario: Reverse-polarity and overvoltage protection in 12 V lead-acid or LiFePO₄ battery packs.

IC Role / Device Role / Timing Role: High-side P-FET switch controlling battery connection to load based on voltage monitoring IC output.

Use Value: -100 V V_DS rating prevents breakdown during load dump transients; 8 Ω R_DS(on) limits power loss to <100 mW at 100 mA load.

Use Scenario: Synchronous rectification or active clamp in isolated flyback converters operating below 100 kHz.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to reduce conduction loss.

Use Value: -750 mA I_D(on) and 100 pF C_iss enable efficient operation at 5–24 V output with <15 ns rise/fall times.

Industrial Sensor Interface

Power Sequencing Controller

Use Scenario: Isolated power rail enable for analog sensor front-ends in PLC I/O modules.

IC Role / Device Role / Timing Role: Controlled power-up switch ensuring analog supply ramps before digital logic initialization.

Use Value: -3.5 V max V_GS(th) allows direct drive from 3.3 V microcontroller GPIO with margin; TO-92 fits dense PCB layouts.

Use Scenario: Staged activation of multiple voltage rails (e.g., 5 V → 3.3 V → 1.8 V) in FPGA-based systems.

IC Role / Device Role / Timing Role: Discrete high-side switch controlled by sequencer IC outputs.

Use Value: 700 mW P_tot and -55 °C to +150 °C T_j range support long-term reliability in unventilated chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVP3306A	V_DS = -60 V, R_DS(on) = 3.5 Ω @ -10 V, TO-92	Lower voltage rating; higher current density but reduced transient margin	Select when system max V_DS < 60 V and lower on-resistance is prioritized over surge tolerance
DMN2011UFG-7	V_DS = -20 V, R_DS(on) = 1.2 Ω @ -4.5 V, SOT-23	Surface-mount, lower voltage, logic-level gate; incompatible pinout and thermal profile	Choose only for space-constrained, low-voltage (<15 V) designs requiring logic-compatible drive

Compared with ZVP2110ASTOA, ZVP3306A trades 40 V blocking headroom for lower conduction loss, while DMN2011UFG-7 abandons through-hole mounting and high-voltage capability entirely-neither is pin- or thermal-drop-in, and both require board redesign.

Availability

ZVP2110ASTOA is available at Aetrix Electronics and suitable for battery protection circuits, low-voltage DC-DC converters, industrial sensor interfaces, and power sequencing controllers requiring stable component supply across extended temperature ranges.

Supply support for ZVP2110ASTOA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete semiconductors for precision analog and power management applications.

ZVP2110ASTOA belongs to the ZVP series of high-voltage P-channel MOSFETs designed specifically for robust, low-cost high-side switching in battery-powered and industrial control systems.

FAQ

What is the maximum safe gate-source voltage for ZVP2110ASTOA?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. In practice, gate drive should be limited to -10 V for full enhancement and -5 V for partial turn-on, with external Zener clamping recommended if driving from unregulated sources.

Can ZVP2110ASTOA replace an N-channel MOSFET in a high-side configuration?

Yes-its P-channel topology inherently supports high-side switching without bootstrap circuitry. Unlike N-channel devices, it turns on with negative V_GS relative to source, simplifying gate drive in floating-rail applications such as battery disconnect switches.

Is ZVP2110ASTOA suitable for PWM motor control?

No-it is not rated for repetitive avalanche or high dV/dt stress typical in brushed DC motor drives. Its 7 ns turn-on delay and 15 ns rise time suit low-frequency (<100 kHz) switching, but thermal limits (700 mW) and lack of avalanche energy rating preclude sustained PWM loads above ~100 mA.

Does ZVP2110ASTOA have a built-in body diode, and what are its characteristics?

Yes-it features an intrinsic body diode with V_SD ≈ 1.2 V at -100 mA and reverse recovery time (t_rr) not characterized in the datasheet. The diode conducts only from source to drain and is not rated for continuous reverse current; external flyback diodes are required in inductive switching applications.

ZVP2110ASTOA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZVP2110ASTOA FAQ

1.How can I place an order for ZVP2110ASTOA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVP2110ASTOA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVP2110ASTOA reliable?

The price and inventory of ZVP2110ASTOA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP2110ASTOA is usually 5 days.

3.What payment methods are accepted for ZVP2110ASTOA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP2110ASTOA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVP2110ASTOA?

ZVP2110ASTOA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVP2110ASTOA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVP2110ASTOA?

For technical support, including ZVP2110ASTOA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP2110ASTOA requirements.

6.How does Aetrix verify that ZVP2110ASTOA is sourced from the original manufacturer or authorized distributors?

All ZVP2110ASTOA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP2110ASTOA meets industry standards.

7.What is the process for return or replacement of ZVP2110ASTOA?

All ZVP2110ASTOA units undergo pre-shipment inspection (PSI). If there is an issue with ZVP2110ASTOA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVP2110ASTOA part is unused and in its original packaging.

Return procedure for ZVP2110ASTOA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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