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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVP2110ASTZ

Name: ZVP2110ASTZ
Brand: Diodes Incorporated
SKU: ZVP2110ASTZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVP2110ASTZ

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: ZVP2110ASTZ.pdf

Description:: MOSFET P-CH 100V 230MA E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:9,856

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Product details

Overview

ZVP2110ASTZ from Zetex Semiconductors (now Diodes Incorporated) is a P-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for -100 V V_DS, 8 Ω R_DS(on) at V_GS = -10 V, and -750 mA continuous on-state drain current. It serves as a low-power high-voltage load switch in battery-powered instrumentation, reverse-polarity protection circuits, and discrete logic-level power control stages.

For engineers reviewing the ZVP2110ASTZ datasheet, ZVP2110ASTZ pinout, ZVP2110ASTZ application, or ZVP2110ASTZ equivalent, key selection criteria include verified -100 V blocking capability, gate threshold voltage range (-1.5 V to -3.5 V), pulsed current handling up to -3 A, thermal stability across -55 °C to +150 °C, and TO-92 mechanical compatibility with legacy through-hole layouts.

Technical Context

This device operates as a normally-off P-channel MOSFET requiring negative gate drive relative to source. Its vertical DMOS structure enables higher breakdown voltage and lower on-resistance than planar alternatives in the same package class. The -100 V V_DS rating supports operation in 48 V telecom and industrial bus systems with margin.

Switching performance is characterized by 7 ns turn-on delay, 15 ns rise time, 12 ns turn-off delay, and 15 ns fall time under defined test conditions (V_DD ≈ -25 V, I_D = -375 mA, 50 Ω source impedance). Input capacitance (C_iss = 100 pF) and reverse transfer capacitance (C_rss = 10 pF) support predictable gate drive design in low-frequency switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum drain-source blocking voltage before avalanche conduction
R_DS(on)	8 Ω @ V_GS = -10 V, I_D = -375 mA - On-state resistance defining conduction loss in linear or saturated switching
V_GS(th)	-1.5 V to -3.5 V @ I_D = -1 mA - Gate voltage range at which channel begins to conduct; determines minimum drive level for reliable turn-on
I_D(on)	-750 mA @ V_DS = -25 V, V_GS = -10 V - Sustained current capability under DC or pulsed conditions (≤2% duty cycle)
P_tot	700 mW @ T_amb = 25 °C - Maximum power dissipation without heatsinking; derates linearly above ambient
C_iss	100 pF @ V_DS = -25 V, V_GS = 0 V, f = 1 MHz - Input capacitance affecting gate drive energy and switching speed
g_fs	125 mS @ V_DS = -25 V, I_D = -375 mA - Transconductance indicating gain of gate voltage to drain current

Pinout & Package

Package: TO-92 (E-Line compatible, 3-421 outline), through-hole mounting, standard lead pitch and body dimensions per JEDEC TO-92 specification.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side current path terminal	Connected to load supply rail; withstands -100 V potential relative to source
Gate (G)	Control electrode	Receives negative voltage relative to source to enable conduction; ±20 V absolute max rating
Source (S)	Reference node and return path	Bonded to substrate; defines zero reference for V_GS; carries full load current

Key Features

Feature	Design Value
Vertical DMOS construction	Enables -100 V V_DS rating with 8 Ω R_DS(on) in TO-92 - uncommon voltage/resistance combination for this package
Enhancement-mode operation	Normally-off behavior ensures safe default state during power-up or gate floating - eliminates need for pull-down resistors in many configurations
Wide temperature range	Specified operation from -55 °C to +150 °C junction temperature - suitable for automotive under-hood and industrial environments
Low gate charge	Q_g ~20–30 nC (inferred from C_iss/C_rss and switching times) - reduces gate driver power and enables efficient low-frequency PWM control
TO-92 mechanical compatibility	Direct replacement for legacy P-channel FETs in existing through-hole PCB footprints - no layout redesign required

Applications

Reverse Polarity Protection

Battery Disconnect Switch

Use Scenario: Placed in series with positive supply rail to block reverse-connected batteries or adapters.

IC Role / Device Role / Timing Role: P-channel high-side switch configured with gate tied to ground or controlled via simple resistor divider.

Use Value: Prevents damage from -100 V reverse input while maintaining <8 Ω forward path resistance - minimizes voltage drop and heat generation during normal operation.

Use Scenario: Used in portable medical devices to isolate battery from system during standby or fault conditions.

IC Role / Device Role / Timing Role: Load switch enabling/disabling main power rail based on microcontroller GPIO or manual override signal.

Use Value: Supports -750 mA continuous load current with guaranteed turn-off when gate is open or pulled high - ensures zero leakage current in off-state (I_DSS ≤ -100 µA).

48 V Telecom Line Interface

Discrete Logic-Level Power Control

Use Scenario: Protects downstream circuitry from overvoltage transients on 48 V DC distribution lines.

IC Role / Device Role / Timing Role: High-voltage clamping and current limiting element in front-end protection stage.

Use Value: Withstands -100 V V_DS with minimal derating margin - provides robustness against lightning-induced surges and hot-swap events.

Use Scenario: Replaces bipolar PNP transistors in TTL/CMOS-compatible power gating circuits.

IC Role / Device Role / Timing Role: Voltage-controlled switch interfacing directly with 0 V / -5 V logic outputs.

Use Value: Gate threshold (-1.5 V to -3.5 V) allows direct drive from standard logic families without level-shifting - simplifies interface design and reduces component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVP3306A	V_DS = -60 V, R_DS(on) = 3.5 Ω @ V_GS = -10 V, TO-92	Lower voltage rating; better on-resistance for ≤40 V systems	Select when operating voltage is ≤40 V and lower conduction loss is prioritized over surge margin
DMG2305UVT	V_DS = -20 V, R_DS(on) = 42 mΩ @ V_GS = -4.5 V, SOT-23	Surface-mount, much lower R_DS(on), but limited to ≤20 V systems	Choose for space-constrained, low-voltage, high-current applications where TO-92 is not feasible

Compared with ZVP2110ASTZ, ZVP3306A trades 40 V of blocking headroom for lower on-resistance in the same package, while DMG2305UVT offers dramatically lower R_DS(on) in SMT form but cannot replace it in -100 V applications - selection depends strictly on system voltage and packaging constraints.

Availability

ZVP2110ASTZ is available at Aetrix Electronics and suitable for reverse polarity protection, battery disconnect switches, 48 V telecom line interfaces, and discrete logic-level power control requiring stable component supply and long-term obsolescence management.

Supply support for ZVP2110ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete semiconductors for precision analog and power management applications.

ZVP2110ASTZ belongs to the ZVP-series of high-voltage P-channel MOSFETs designed specifically for robust, low-cost, through-hole power switching in industrial and telecom infrastructure where reliability and voltage margin are critical.

FAQ

Is ZVP2110ASTZ suitable for use in automotive under-hood applications?

Yes - its specified operating junction temperature range of -55 °C to +150 °C meets extended automotive requirements. However, it is not AEC-Q101 qualified; design-in requires validation of thermal performance, board-level stress, and lifetime reliability per specific vehicle environment.

What is the maximum safe gate-source voltage for ZVP2110ASTZ?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to -10 V to -15 V for full enhancement, with transient spikes clamped below ±20 V using Zener diodes or integrated drivers.

Can ZVP2110ASTZ be used as a high-side switch with 0 V gate control?

No - as a P-channel enhancement-mode device, it requires a gate voltage *lower* than the source to turn on. With source at +V_IN, gate must be pulled toward ground or below to achieve V_GS < V_GS(th). Direct 0 V gate control only works if source is at ground potential (i.e., low-side configuration).

Does ZVP2110ASTZ have built-in ESD protection?

No - the datasheet does not specify on-chip ESD protection structures. Gate oxide is sensitive to electrostatic discharge; external protection (e.g., series gate resistor + Zener clamp to source) is recommended during handling and in-circuit operation, especially in automated assembly environments.

ZVP2110ASTZ Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Tape & Box (TB)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZVP2110ASTZ FAQ

1.How can I place an order for ZVP2110ASTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVP2110ASTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVP2110ASTZ reliable?

The price and inventory of ZVP2110ASTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP2110ASTZ is usually 5 days.

3.What payment methods are accepted for ZVP2110ASTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP2110ASTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVP2110ASTZ?

ZVP2110ASTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVP2110ASTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVP2110ASTZ?

For technical support, including ZVP2110ASTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP2110ASTZ requirements.

6.How does Aetrix verify that ZVP2110ASTZ is sourced from the original manufacturer or authorized distributors?

All ZVP2110ASTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP2110ASTZ meets industry standards.

7.What is the process for return or replacement of ZVP2110ASTZ?

All ZVP2110ASTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZVP2110ASTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVP2110ASTZ part is unused and in its original packaging.

Return procedure for ZVP2110ASTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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