Diodes Incorporated ZVP2110GTA
- Part No.:
- ZVP2110GTA
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
ZVP2110GTA.pdf
- Description:
- MOSFET P-CH 100V 310MA SOT223
- Quantity:
- Payment:

- Shipping:

Inventory:1,788
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ZVP2110GTA from Diodes Incorporated is a P-channel enhancement-mode vertical DMOS FET in SOT223 package, rated for -100V VDS, 8Ω RDS(on) at VGS = -10V, and -310mA continuous drain current; designed for high-efficiency power management in low-power DC-DC converters and load switching circuits.
For engineers reviewing the ZVP2110GTA datasheet, ZVP2110GTA pinout, ZVP2110GTA application, or ZVP2110GTA equivalent, key selection criteria include verified -100V breakdown voltage, gate-threshold range of -1.5V to -3.5V, pulsed drain capability up to -3A, thermal performance under 2W dissipation, and RoHS-compliant green packaging with SOT223 mechanical compatibility.
Technical Context
This MOSFET employs vertical DMOS architecture optimized for low RDS(on) while preserving fast switching characteristics: td(on) ≤ 7ns, tr ≤ 15ns, and Ciss = 100pF at VDS = -25V. Its -3.5V maximum VGS(th) ensures reliable turn-on with standard logic-level gate drive.
The device operates across -55°C to +150°C junction temperature range and supports automotive-grade change control per AEC-Q101 qualification upon request. Gate leakage remains below -20nA at ±20V, enabling stable biasing in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | -100V - supports input rails up to -80V with margin for transient spikes |
| RDS(on) | 8Ω @ VGS = -10V - enables <1.5W conduction loss at -310mA continuous operation |
| ID Continuous | -310mA @ TA = +25°C - suitable for low-current load switches and bias control paths |
| VGS(th) | -1.5V to -3.5V - compatible with 3.3V/5V microcontroller GPIO without level-shifting |
| Ciss | 100pF @ VDS = -25V - limits gate drive power requirement in PWM applications |
| Ptot | 2W @ TA = +25°C - requires minimal heatsinking in SOT223 footprint |
| tf/tr | 15ns each - supports >1MHz switching in synchronous buck or flyback topologies |
Pinout & Package
Package: SOT223 (Type DN), surface-mount, 4-pin outline with exposed drain tab for thermal conduction. Dimensions: 6.5 × 7.0 × 1.6 mm (L × W × H); weight ≈ 0.112 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current path output | Internally connected to exposed metal tab; primary heat sink interface and high-side switching node |
| Pin 2 (Source) | Reference terminal for gate drive | Common return for load current; sets VGS reference point in high-side configuration |
| Pin 3 (Gate) | Control input | High-impedance MOS gate requiring <20nA leakage budget; sensitive to ESD per MIL-STD-202 |
| Pin 4 (Drain / Tab) | Thermal & electrical drain connection | Electrically tied to Pin 1; must be soldered to PCB copper pour for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| P-channel vertical DMOS structure | Enables lower RDS(on) vs. planar equivalents at same voltage rating, improving efficiency in space-constrained designs |
| Lead-free, halogen- and antimony-free "Green" compound | UL 94V-0 rated molding material compliant with RoHS 3 (2015/863/EU) and IATF 16949 manufacturing |
| Moisture Sensitivity Level 1 | No bake required before reflow; compatible with standard J-STD-020 assembly processes |
| Matte tin annealed terminals | Solderable per MIL-STD-202 Method 208; ensures robust intermetallic formation and long-term joint reliability |
Applications
| Low-Power Load Switch | Battery Protection Circuit |
|---|---|
Use Scenario: Controlled enable/disable of peripheral modules in portable medical devices. IC Role / Device Role / Timing Role: High-side P-channel switch isolating 3.3V/5V subsystems from main battery rail. Use Value: 8Ω RDS(on) limits dropout to <2.5mV at 310mA, minimizing impact on supply regulation. | Use Scenario: Reverse-polarity and overvoltage protection in coin-cell–powered IoT sensors. IC Role / Device Role / Timing Role: Series blocking element activated by comparator-driven gate control. Use Value: -100V VDS withstands >80V transients during hot-swap events without clamping diodes. |
| DC-DC Converter Synchronous Rectifier | Industrial Sensor Bias Control |
Use Scenario: Secondary-side rectification in isolated flyback converters for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Synchronously switched P-channel FET replacing Schottky diode in 12V output stage. Use Value: 15ns fall time enables clean commutation at 500kHz, reducing reverse recovery losses. | Use Scenario: Precision current sourcing for 4–20mA loop transmitters in hazardous-area instrumentation. IC Role / Device Role / Timing Role: Constant-current source driver modulated by DAC-controlled gate voltage. Use Value: -3.5V max VGS(th) allows full 0–3.3V DAC range to linearly adjust output current from 0 to 310mA. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011LFG-7 | RDS(on) = 1.2Ω @ VGS = -4.5V; higher current rating (-1.2A), smaller SOT-23 package | Better suited for higher-current, space-constrained designs where gate drive is limited to 4.5V | Select when lower on-resistance and compact size outweigh need for -100V rating |
| SI2301BDS-T1-GE3 | RDS(on) = 120mΩ @ VGS = -2.5V; SOT-23 package; VDS = -20V | Optimized for ultra-low-voltage logic-level switching, not high-voltage blocking | Choose only for sub-20V systems requiring minimal gate drive voltage |
Compared with DMN2011LFG-7 and SI2301BDS-T1-GE3, ZVP2110GTA uniquely balances -100V blocking, SOT223 thermal capability, and gate-threshold compatibility with 3.3V/5V controllers-making it optimal for mid-voltage industrial and medical power switches where voltage margin and thermal headroom are critical.
Availability
ZVP2110GTA is available at Aetrix Electronics and suitable for low-power load switching, battery protection circuits, DC-DC converter synchronous rectification, and industrial sensor bias control requiring stable component supply and long-term manufacturability.
Supply support for ZVP2110GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
ZVP2110GTA belongs to Diodes' high-voltage P-channel MOSFET product line, engineered specifically for efficient, thermally robust power control in space-limited industrial and medical applications where reliability and regulatory compliance are mandatory.
FAQ
Is ZVP2110GTA qualified for automotive applications?
ZVP2110GTA is not pre-qualified to AEC-Q101, but Diodes Incorporated offers automotive-grade variants of this platform upon request with PPAP documentation, IATF 16949 manufacturing, and AEC-Q101 stress testing. Standard ZVP2110GTA is intended for industrial and medical use.
What is the recommended PCB layout for thermal performance?
For optimal thermal performance, connect the exposed drain tab (Pin 1 and Pin 4) to a ≥100 mm² internal or external copper pour using ≥4 thermal vias (0.3mm diameter, spaced ≤1.5mm apart). Maintain ≥0.5mm clearance from adjacent traces to avoid solder wicking.
Can ZVP2110GTA be driven directly from a 3.3V microcontroller GPIO?
Yes-its VGS(th) range of -1.5V to -3.5V ensures turn-on with 3.3V logic: applying 0V to gate yields full conduction when source is at 3.3V, delivering -310mA continuously with acceptable RDS(on) (<12Ω typical at VGS = -3.3V).
Does ZVP2110GTA require gate resistors in switching applications?
A series gate resistor (10–47Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 10pF) and PCB inductance. Without it, overshoot exceeding ±20V may occur during fast transitions, risking gate oxide damage despite ±20V VGS rating.
ZVP2110GTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 375mA, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
ZVP2110GTA FAQ
1.How can I place an order for ZVP2110GTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZVP2110GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZVP2110GTA reliable?
The price and inventory of ZVP2110GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP2110GTA is usually 5 days.
3.What payment methods are accepted for ZVP2110GTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP2110GTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZVP2110GTA?
ZVP2110GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZVP2110GTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZVP2110GTA?
For technical support, including ZVP2110GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP2110GTA requirements.
6.How does Aetrix verify that ZVP2110GTA is sourced from the original manufacturer or authorized distributors?
All ZVP2110GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP2110GTA meets industry standards.
7.What is the process for return or replacement of ZVP2110GTA?
All ZVP2110GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZVP2110GTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZVP2110GTA part is unused and in its original packaging.
Return procedure for ZVP2110GTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZVP2110GTA Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

