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Diodes Incorporated ZVP2110GTC
- Part No.:
- ZVP2110GTC
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
ZVP2110GTC.pdf
- Description:
- MOSFET P-CH 100V 310MA SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:7,323
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Product details
Overview
ZVP2110GTC from Diodes Incorporated is a P-channel enhancement-mode vertical DMOS FET in SOT223 (Type DN) package, rated for -100V VDS, 8Ω RDS(on) at VGS = -10V, and -310mA continuous drain current. It serves as a high-efficiency power switch in low-power DC-DC converters, load switches, and battery protection circuits.
For engineers reviewing the ZVP2110GTC datasheet, ZVP2110GTC pinout, ZVP2110GTC application, or ZVP2110GTC equivalent, key selection criteria include its -100V breakdown voltage, low gate threshold (-1.5V to -3.5V), 2W power dissipation, fast switching (7ns turn-on delay), and SOT223 thermal performance in space-constrained industrial and automotive auxiliary power designs.
Technical Context
This MOSFET employs vertical DMOS architecture optimized for low RDS(on) while preserving switching speed-evidenced by 125mS transconductance and 100pF input capacitance at -25V VDS. Its gate threshold range (-1.5V to -3.5V) enables reliable turn-on with standard logic-level drive in high-side configurations.
Thermal design is supported by a 2W Ptot rating at TA = +25°C and a junction temperature range of -55°C to +150°C. The device meets J-STD-020 Level 1 moisture sensitivity and uses matte tin–annealed terminals compatible with MIL-STD-202 soldering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | -100V - supports high-voltage rail switching up to -100V without avalanche breakdown |
| RDS(on) Max | 8Ω @ VGS = -10V - ensures low conduction loss in <310mA load paths |
| ID Continuous | -310mA @ TA = +25°C - suitable for low-current power control in compact PCB layouts |
| VGS(th) | -1.5V to -3.5V - enables robust turn-on with 3.3V or 5V logic-compatible gate drive |
| td(on) | 7ns - minimizes switching transition time in PWM-controlled regulators |
| Ptot | 2W @ TA = +25°C - allows direct mounting on PCB without heatsink in ambient-limited applications |
| Ciss | 100pF @ VDS = -25V - limits gate drive power requirement in high-frequency switching |
Pinout & Package
Package: SOT223 (Type DN), surface-mount, 4-terminal plastic package with exposed drain pad for thermal conduction. Dimensions: 6.5 × 7.0 × 1.6 mm (L × W × H); weight ≈ 0.112 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output | Connected to high-side power rail; electrically and thermally tied to exposed pad |
| Source (S) | Reference node for gate drive | Common return for load current; sets VGS reference point |
| Gate (G) | Control terminal | High-impedance input requiring ≤20V |VGS|; drives channel inversion |
| Tab/Exposed Pad | Drain extension | Integral thermal and electrical connection to Drain; must be soldered to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| P-channel vertical DMOS structure | Enables lower RDS(on) vs. planar MOSFETs at same voltage rating, improving efficiency in high-side switches |
| Lead-free, halogen- and antimony-free | Complies with RoHS 3 and automotive green standards; eliminates hazardous material handling concerns |
| J-STD-020 Level 1 moisture sensitivity | Allows indefinite floor life before reflow; no baking required prior to assembly |
| Matte tin–annealed terminals | Ensures reliable solder wetting and intermetallic formation per MIL-STD-202 Method 208 |
| UL 94V-0 molded compound | Provides flame-retardant housing for safety-critical power management modules |
Applications
| Industrial Power Sequencing | Automotive Body Control Module |
|---|---|
Use Scenario: Controlled power-up sequence for microcontroller peripherals in programmable logic controllers. IC Role / Device Role / Timing Role: High-side load switch enabling isolated 12V rail activation under MCU GPIO control. Use Value: -100V rating prevents failure during load dump transients; 8Ω RDS(on) limits self-heating at 250mA loads. | Use Scenario: Reverse-polarity protection and ignition-switched accessory power in door module ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET used in active reverse-battery protection circuit. Use Value: Gate threshold range ensures turn-on at 3.3V MCU output; SOT223 thermal mass sustains 150°C junction during engine bay operation. |
| Portable Medical Sensor Supply | Smart Home Energy Monitor |
Use Scenario: Isolated power gating for low-noise analog front-end in battery-powered ECG sensors. IC Role / Device Role / Timing Role: Low-leakage power switch disconnecting sensor bias rails during sleep mode. Use Value: -100μA IDSS at -100V ensures <1μW standby loss; SOT223 footprint fits tight 2-layer PCB layouts. | Use Scenario: Mains-powered sub-metering unit with isolated auxiliary supply for communication ICs. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver in flyback-derived 5V supply. Use Value: 7ns td(on) and 15ns tr support >500kHz switching; 2W Ptot accommodates peak loads during Zigbee transmission bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2013LFG-7 | RDS(on) = 1.4Ω @ VGS = -4.5V; VDS = -20V - lower voltage, much lower on-resistance | Not suitable for -100V systems; better for 5–12V logic-driven switches | Select only if operating voltage ≤ -20V and RDS(on) reduction is critical |
| SI2301DS-T1-E3 | RDS(on) = 0.13Ω @ VGS = -4.5V; VDS = -20V - higher current (2.7A), lower voltage | Lacks -100V capability; optimized for portable battery load switching | Choose when system voltage is ≤ -20V and >2A pulsed current is needed |
Compared with DMN2013LFG-7 and SI2301DS-T1-E3, ZVP2110GTC uniquely supports -100V operation in SOT223, trading higher RDS(on) for voltage robustness-making it irreplaceable in legacy 24–48V industrial and automotive auxiliary supplies where overvoltage margin is non-negotiable.
Availability
ZVP2110GTC is available at Aetrix Electronics and suitable for industrial power sequencing, automotive body control modules, portable medical sensor supplies, and smart home energy monitors requiring stable component supply across extended product lifecycles.
Supply support for ZVP2110GTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
ZVP2110GTC belongs to Diodes' high-voltage P-channel MOSFET product line, engineered specifically for robust, cost-effective high-side switching in industrial and automotive auxiliary power domains where -100V breakdown and SOT223 thermal reliability are essential.
FAQ
Is ZVP2110GTC suitable for high-side switching with 3.3V GPIO control?
Yes. Its gate threshold voltage range of -1.5V to -3.5V ensures reliable turn-on with standard 3.3V microcontroller outputs driving the gate through an appropriate pull-up resistor. At VGS = -3.3V, typical RDS(on) increases to ~12Ω, which remains acceptable for ≤200mA loads with minimal voltage drop and self-heating.
What is the maximum safe operating temperature for continuous use?
The device supports continuous operation up to +150°C junction temperature. With its 2W power dissipation rating at +25°C ambient and SOT223 thermal resistance (RθJA ≈ 62.5°C/W), sustained 310mA operation requires ≤+85°C ambient or ≥1 cm² copper pour under the exposed drain pad to maintain TJ < 150°C.
Does ZVP2110GTC have avalanche rating or energy specification?
No. The datasheet does not specify single-pulse avalanche energy (EAS) or repetitive avalanche ratings. It is intended for normal switching operation only. Transient overvoltage events exceeding -100V must be clamped externally using TVS diodes or RC snubbers to prevent catastrophic failure.
Can ZVP2110GTC replace ZVP2106G in existing designs?
Yes, with verification. Both share SOT223 packaging and P-channel topology, but ZVP2110GTC has higher VDS (-100V vs. -60V) and slightly higher RDS(on) (8Ω vs. 6Ω at -10V). It improves overvoltage margin without layout change, though gate drive timing may require minor adjustment due to higher Ciss (100pF vs. 85pF).
ZVP2110GTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 375mA, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
ZVP2110GTC FAQ
1.How can I place an order for ZVP2110GTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZVP2110GTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZVP2110GTC reliable?
The price and inventory of ZVP2110GTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP2110GTC is usually 5 days.
3.What payment methods are accepted for ZVP2110GTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP2110GTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZVP2110GTC?
ZVP2110GTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZVP2110GTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZVP2110GTC?
For technical support, including ZVP2110GTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP2110GTC requirements.
6.How does Aetrix verify that ZVP2110GTC is sourced from the original manufacturer or authorized distributors?
All ZVP2110GTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP2110GTC meets industry standards.
7.What is the process for return or replacement of ZVP2110GTC?
All ZVP2110GTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVP2110GTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZVP2110GTC part is unused and in its original packaging.
Return procedure for ZVP2110GTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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