Diodes Incorporated ZVP2120GTC

Overview

ZVP2120G from Diodes Incorporated is a P-channel enhancement-mode vertical DMOSFET rated for -200 V drain-source voltage, 25 Ω on-resistance at -10 V gate drive, and -200 mA continuous drain current; it delivers low conduction loss and fast switching in high-efficiency power management circuits such as backlight inverters and AC-DC auxiliary supplies.

For engineers reviewing the ZVP2120G datasheet, ZVP2120G pinout, ZVP2120G application, or ZVP2120G equivalent, key selection criteria include verified BVDSS, RDS(on) at specified VGS, ID rating under thermal derating, switching time performance (td(on), tr, tf), and SOT223 package compatibility with board-level thermal design constraints.

Technical Context

This device operates as a high-voltage P-channel switch with gate-threshold voltage ranging from -1.5 V to -3.5 V and exhibits zero-gate-voltage leakage of ≤10 µA at -200 V. Its vertical DMOS structure enables stable breakdown behavior and low input capacitance (Ciss = 100 pF).

Designed for unidirectional DC switching, it supports pulsed drain currents up to -1.2 A and maintains RDS(on) stability across -55°C to +150°C junction temperature range. The SOT223 package provides 2 W power dissipation capability with defined thermal resistance to ambient.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-pin outline with exposed drain pad for thermal conduction and mechanical anchoring.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with ZVP2120G, ZVP3306A offers higher current and lower RDS(on) but sacrifices 140 V blocking headroom, while DMN2053LFG-7 delivers ultra-low on-resistance at low voltage but cannot replace ZVP2120G in 100–200 V applications due to insufficient BVDSS.

Availability

ZVP2120G is available at Aetrix Electronics and suitable for backlight inverters, AC-DC auxiliary supplies, and industrial sensor power switching requiring stable component supply and long-term production continuity.

Supply support for ZVP2120G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

ZVP2120G belongs to Diodes' high-voltage discrete MOSFET product line, engineered specifically for energy-efficient, compact power conversion in consumer, industrial, and lighting applications where reliability and thermal performance are critical.

FAQ

What is the maximum safe operating voltage for ZVP2120G in continuous DC blocking?

The absolute maximum drain-source voltage (BVDSS) is -200 V, tested at ID = -1 mA with VGS = 0 V. For reliable long-term operation, design margin should limit steady-state DC blocking to ≤160 V, especially at elevated temperatures, to maintain safe SOA margins and avoid avalanche-induced degradation.

Can ZVP2120G be driven directly from a 3.3 V microcontroller GPIO?

No - its gate-threshold voltage ranges from -1.5 V to -3.5 V, meaning a 3.3 V GPIO cannot produce the required negative VGS. A level-shifting circuit or inverting driver generating ≥-4.5 V is necessary to ensure full enhancement and minimize RDS(on) in practical operation.

Is the SOT223 package thermally adequate for 2 W dissipation in still air?

Yes - the SOT223 (Type DN) package is rated for 2 W total power dissipation at TA = +25°C when mounted on a 1-inch² 2-oz copper pad with 6 thermal vias. Derating is required above +25°C ambient; at +70°C, maximum usable power drops to ~1.2 W without forced airflow.

Does ZVP2120G have built-in ESD protection on the gate terminal?

No - the datasheet does not specify integrated gate protection diodes or ESD structures. External gate resistors (≤100 Ω) and series Zener clamps (e.g., 12 V) are recommended during handling and PCB layout to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV.