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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVP3310ASTOB

Name: ZVP3310ASTOB
Brand: Diodes Incorporated
SKU: ZVP3310ASTOB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVP3310ASTOB

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: ZVP3310ASTOB.pdf

Description:: MOSFET P-CH 100V 140MA E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:8,263

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Product details

Overview

ZVP3310ASTOB from Zetex Semiconductors (now Diodes Incorporated) is a P-channel enhancement-mode vertical DMOS FET in TO-92 package, designed for low-power switching and load control in 100 V rail systems. It delivers R_DS(on) = 20 Ω at V_GS = −10 V and I_D = −150 mA, supports continuous drain current up to −140 mA at 25°C, and operates across −55°C to +150°C junction temperature range - used in battery protection circuits and low-side power switches.

For engineers reviewing the ZVP3310ASTOB datasheet, ZVP3310ASTOB pinout, ZVP3310ASTOB application, or ZVP3310ASTOB equivalent, key selection criteria include verified V_DS = −100 V rating, gate threshold voltage range of −1.5 V to −3.5 V, pulsed drain capability up to −1.2 A, thermal robustness to +150°C, and TO-92 mechanical compatibility with legacy ZVP3310A designs.

Technical Context

This device employs vertical DMOS architecture optimized for enhanced breakdown immunity and stable threshold behavior over temperature. Its −100 V V_DS rating and −3.5 V maximum V_GS(th) enable reliable turn-on in low-voltage gate drive systems (e.g., 5 V microcontroller outputs), while the 50 mS transconductance ensures responsive switching under −150 mA load conditions.

Capacitance profile shows C_iss = 50 pF, C_oss = 15 pF, and C_rss = 5 pF at V_DS = −25 V, supporting fast switching with measured t_d(on)/t_r/t_d(off)/t_f all ≤ 8 ns under 50 Ω source impedance - suitable for high-frequency PWM control below 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−100 V: Maximum blocking voltage before avalanche conduction in P-channel configuration
R_DS(on)	20 Ω @ V_GS = −10 V, I_D = −150 mA: On-resistance defines conduction loss in linear or saturated switching
V_GS(th)	−1.5 V to −3.5 V @ I_D = −1 mA: Gate voltage range ensuring consistent turn-on across process and temperature
I_D (continuous)	−140 mA @ T_amb = 25°C: Continuous DC current handling limited by 625 mW package power dissipation
g_fs	50 mS @ V_DS = −25 V, I_D = −150 mA: Transconductance determines small-signal gain and gate drive sensitivity
C_iss/C_oss/C_rss	50 pF / 15 pF / 5 pF @ V_DS = −25 V: Input/output/reverse transfer capacitances govern switching speed and EMI behavior
t_d(on)/t_r/t_d(off)/t_f	≤ 8 ns each @ V_DD ≈ −25 V, I_D = −150 mA: Total switching time < 32 ns enables sub-1 MHz PWM operation

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-lead plastic case with standard D-G-S terminal assignment (viewed from flat side, leads down).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side or low-side current path terminal	Connected to negative supply rail or load return; handles full switched current and blocking voltage
Gate (G)	Control electrode for channel modulation	Receives negative gate drive relative to source; requires ≤ ±20 V absolute rating and low capacitive loading
Source (S)	Reference node for gate drive and current return	Biased at system ground or positive rail depending on topology; defines V_GS reference point

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switch configuration without level-shifting when source is tied to positive rail
Vertical DMOS structure	Improves ruggedness against avalanche energy and reduces parasitic inductance vs. planar MOSFETs
−55°C to +150°C operating range	Supports deployment in automotive under-hood, industrial controls, and extended-temperature instrumentation
TO-92 mechanical compatibility	Direct replacement for legacy ZVP3310A in existing PCB footprints and assembly processes
Low gate charge profile	Q_g < 10 nC (inferred from Crss/Ciss trends) minimizes driver power and propagation delay

Applications

Battery Protection Circuit

Low-Voltage DC-DC Enable Switch

Use Scenario: Reverse-polarity and over-discharge protection in single-cell Li-ion or alkaline battery packs.

IC Role / Device Role / Timing Role: Low-side P-FET switch controlling battery discharge path based on protection IC signal.

Use Value: R_DS(on) = 20 Ω limits voltage drop to < 3 mV at 150 mA, preserving battery runtime and enabling precise current sensing.

Use Scenario: Enabling/disabling output stage of buck converter during standby or fault conditions.

IC Role / Device Role / Timing Role: High-side P-FET pass element controlled by microcontroller GPIO.

Use Value: −100 V V_DS margin accommodates input transients up to 60 V, and 8 ns switching ensures clean enable/disable edges.

LED Current Limiter

Microcontroller I/O Protection

Use Scenario: Constant-current sink for indicator LEDs in industrial HMI panels with 24 V supply rails.

IC Role / Device Role / Timing Role: Linear-mode P-FET acting as adjustable current source via gate voltage tuning.

Use Value: Stable V_GS(th) range (−1.5 V to −3.5 V) allows predictable current setting with 3.3 V/5 V DAC outputs.

Use Scenario: Isolating MCU GPIO pins from external sensors or actuators subject to ESD or voltage faults.

IC Role / Device Role / Timing Role: Bidirectional clamping switch that blocks reverse current and absorbs transient energy.

Use Value: −100 V blocking capability prevents latch-up during ±2 kV contact ESD events, and TO-92 footprint simplifies board-level layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel low-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVP2106A	V_DS = −60 V, R_DS(on) = 10 Ω @ −10 V, I_D = −200 mA	Lower voltage rating but higher current capacity; unsuitable for 100 V systems	Select when operating voltage ≤ 48 V and lower on-resistance is prioritized
DMN2013LFG-7	V_DS = −20 V, R_DS(on) = 0.12 Ω @ −4.5 V, SOT-23 package	Higher current density but incompatible voltage rating and surface-mount only	Choose for space-constrained 3.3 V/5 V logic-level designs requiring < 0.2 Ω R_DS(on)

Compared with ZVP2106A and DMN2013LFG-7, ZVP3310ASTOB uniquely balances −100 V blocking, TO-92 through-hole compatibility, and −140 mA continuous rating - making it irreplaceable in legacy-reliant, medium-voltage, low-power linear or switching roles where package form factor and voltage margin are non-negotiable.

Availability

ZVP3310ASTOB is available at Aetrix Electronics and suitable for battery management systems, industrial sensor interfaces, LED lighting controls, and microcontroller I/O protection requiring stable component supply and long-term obsolescence resilience.

Supply support for ZVP3310ASTOB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance analog and discrete semiconductors with emphasis on efficiency, reliability, and thermal stability.

ZVP3310ASTOB belongs to the ZVP series of vertical DMOS FETs engineered for robust low-power switching in cost-sensitive, thermally constrained applications - particularly where TO-92 compatibility and −100 V capability are required.

FAQ

Is ZVP3310ASTOB pin-compatible with ZVP3310A?

Yes. ZVP3310ASTOB is a direct replacement for ZVP3310A, sharing identical TO-92 package dimensions, lead assignment (D-G-S), and electrical specifications per Issue 2 datasheet. No PCB or schematic changes are required for migration.

What is the maximum safe gate drive voltage for ZVP3310ASTOB?

The absolute maximum V_GS is ±20 V. For reliable operation, gate drive should be limited to −10 V to −15 V for full enhancement, avoiding prolonged exposure above −12 V to prevent gate oxide stress under high-temperature conditions.

Can ZVP3310ASTOB be used in linear (analog) mode?

Yes. Its specified saturation characteristics, transconductance linearity (g_fs = 50 mS), and thermal derating curve support linear-mode use - such as constant-current LED drivers or precision current sources - provided power dissipation remains within 625 mW and junction temperature stays ≤ +150°C.

Does ZVP3310ASTOB have built-in ESD protection?

No. The device has no integrated ESD protection diodes. External TVS or RC filtering is recommended on gate and drain terminals when deployed in environments with > 2 kV HBM risk, especially in microcontroller I/O isolation applications.

ZVP3310ASTOB Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 140mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20Ohm @ 150mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 625mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZVP3310ASTOB FAQ

1.How can I place an order for ZVP3310ASTOB through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVP3310ASTOB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVP3310ASTOB reliable?

The price and inventory of ZVP3310ASTOB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP3310ASTOB is usually 5 days.

3.What payment methods are accepted for ZVP3310ASTOB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP3310ASTOB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVP3310ASTOB?

ZVP3310ASTOB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVP3310ASTOB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVP3310ASTOB?

For technical support, including ZVP3310ASTOB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP3310ASTOB requirements.

6.How does Aetrix verify that ZVP3310ASTOB is sourced from the original manufacturer or authorized distributors?

All ZVP3310ASTOB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP3310ASTOB meets industry standards.

7.What is the process for return or replacement of ZVP3310ASTOB?

All ZVP3310ASTOB units undergo pre-shipment inspection (PSI). If there is an issue with ZVP3310ASTOB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVP3310ASTOB part is unused and in its original packaging.

Return procedure for ZVP3310ASTOB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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