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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZVP4105A

Name: ZVP4105A
Brand: Diodes Incorporated
SKU: ZVP4105A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZVP4105A

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: ZVP4105A.pdf

Description:: MOSFET P-CH 50V 175MA TO92-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,194

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Product details

Overview

ZVP4105A from Zetex Semiconductors (now Diodes Incorporated) is a P-channel enhancement-mode vertical DMOS FET rated for -50 V V_DS, 10 Ω R_DS(on) at V_GS = -5 V, and -175 mA continuous drain current; used in low-power load switching, battery protection, and level-shifting circuits in portable instrumentation and power management modules.

For engineers reviewing the ZVP4105A datasheet, ZVP4105A pinout, ZVP4105A application, or ZVP4105A equivalent, key selection criteria include verified gate threshold range (-0.8 to -2.0 V), pulsed switching performance (t_d(off) = 18 ns, t_f = 25 ns), and TO-92 package thermal derating behavior under ambient-limited PCB layouts.

Technical Context

This device operates as a normally-off P-channel MOSFET with vertical DMOS structure enabling improved on-resistance-to-area ratio versus planar designs. Its gate threshold voltage is specified between -0.8 V and -2.0 V at I_D = -1 mA, ensuring reliable turn-on with standard logic-level drive in low-voltage systems.

Switching timing parameters are measured under defined test conditions: V_DD ≈ -30 V, I_D = -270 mA, 50 Ω source impedance, and <5 ns pulse rise time. Input capacitance (C_iss = 40 pF) and output capacitance (C_oss = 15 pF) support predictable gate drive design in discrete switching nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	-50 V - Maximum blocking voltage before avalanche conduction in reverse-biased drain-source path
R_DS(on)	10 Ω @ V_GS = -5 V, I_D = -100 mA - Confirmed on-state resistance defining conduction loss in DC load paths
I_D Continuous	-175 mA @ T_amb = 25°C - Absolute max steady-state current limited by 625 mW package power dissipation
V_GS(th)	-0.8 to -2.0 V @ I_D = -1 mA - Verified gate turn-on threshold enabling compatibility with 3.3 V or 5 V logic control
t_f / t_d(off)	25 ns / 18 ns - Measured fall and turn-off delay times under standardized 50 Ω drive and -30 V V_DD
C_iss / C_oss	40 pF / 15 pF @ V_DS = -25 V - Input and output capacitance values critical for gate driver sizing and EMI estimation

Pinout & Package

Package: TO-92 (E-Line compatible), through-hole, 3-pin plastic case with D-G-S terminal assignment confirmed per Zetex Issue 2 datasheet diagram (ZVP4105A 3-435).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side current return path	Connected to negative rail or load return; handles full switched current and blocking voltage
Gate (G)	Control electrode	Receives logic-level voltage to modulate channel conductivity; requires <10 nA leakage drive
Source (S)	Reference node for gate drive	Bias reference for V_GS; tied to positive supply in high-side switch configurations

Key Features

Feature	Design Value
P-channel enhancement mode	Ensures default-OFF operation without external pull-down; simplifies control logic in battery-isolation circuits
Vertical DMOS structure	Delivers 10 Ω R_DS(on) in TO-92 footprint-enabling higher current density than lateral P-MOS alternatives
Low V_GS(th) range	-0.8 to -2.0 V threshold supports direct interface with 3.3 V microcontroller GPIOs without level shifters
Specified switching times	18 ns t_d(off) and 25 ns t_f enable use in >1 MHz discrete PWM stages with predictable dead-time margins

Applications

Battery Protection Circuit

Low-Voltage Level Shifter

Use Scenario: Reverse-current blocking in single-cell Li-ion backup paths with <5 V system rails.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side load switch with gate driven by charge-pump or comparator output.

Use Value: 10 Ω R_DS(on) limits voltage drop to <175 mV at 17.5 mA, preserving battery runtime and enabling precise overcurrent detection.

Use Scenario: Translating 3.3 V logic signals to -5 V domains in mixed-supply sensor interfaces.

IC Role / Device Role / Timing Role: Voltage-level translator using source-follower configuration with fixed source bias.

Use Value: Verified -2.0 V maximum V_GS(th) ensures full enhancement at 3.3 V gate drive, eliminating need for external bias resistors.

Portable Instrument Power Sequencing

LED Current Sink Control

Use Scenario: Controlled power-up sequencing of analog front-end ICs in handheld multimeters.

IC Role / Device Role / Timing Role: Discrete power switch enabling timed enable/disable of subsystem rails via MCU GPIO.

Use Value: 18 ns t_d(off) and 25 ns t_f allow sub-microsecond rail disable, preventing latch-up during hot-swap transitions.

Use Scenario: Constant-current LED dimming in indicator panels with shared ground architecture.

IC Role / Device Role / Timing Role: Low-side current sink with gate driven by PWM signal; source tied to LED cathode.

Use Value: -50 V V_DS rating accommodates transient spikes in inductive LED drivers, improving field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVP3306A	V_DS = -60 V, R_DS(on) = 12 Ω @ V_GS = -10 V, higher V_GS(th) (-1.0 to -3.0 V)	Requires higher gate drive voltage for optimal R_DS(on); better suited for 5 V–12 V systems	Select when higher blocking voltage and lower leakage at elevated temperature are prioritized over logic-level drive
DMN2004LK-7	V_DS = -20 V, R_DS(on) = 4.5 Ω @ V_GS = -4.5 V, SOT-23 package	Lower voltage rating but superior on-resistance and surface-mount form factor	Choose for space-constrained 3.3 V applications where -20 V blocking suffices and reflow assembly is required

Compared with ZVP4105A, ZVP3306A offers higher voltage margin but demands stronger gate drive, while DMN2004LK-7 delivers lower conduction loss in compact SMT layout at the cost of reduced breakdown capability-selection depends on system rail voltage, drive strength, and assembly method.

Availability

ZVP4105A is available at Aetrix Electronics and suitable for battery protection circuits, portable instrument power sequencing, and low-voltage level-shifting applications requiring stable component supply across extended production lifecycles.

Supply support for ZVP4105A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete semiconductors for precision analog and power management applications.

ZVP4105A belongs to the ZVP series of vertical DMOS P-channel FETs designed specifically for low-power, logic-compatible switching in space- and efficiency-constrained portable electronics.

FAQ

What is the maximum safe operating temperature for ZVP4105A?

The ZVP4105A has a specified junction temperature range of -55°C to +150°C. At 25°C ambient, its 625 mW power dissipation limit corresponds to ~125°C junction rise assuming typical TO-92 thermal resistance (R_θJA ≈ 200°C/W). Derating is required above 25°C ambient per the datasheet curve; full-rated current is not sustainable at >70°C board temperature.

Can ZVP4105A be used in high-side switch configurations?

Yes-ZVP4105A is commonly deployed as a high-side switch with source connected to the positive supply rail and load tied between drain and ground. Its P-channel enhancement mode and -0.8 V minimum V_GS(th) allow full turn-on with gate pulled to ground, making it suitable for reverse-polarity and battery-disconnect applications without level-shifting circuitry.

Is ZVP4105A RoHS compliant?

Yes-ZVP4105A was manufactured under Zetex's RoHS-compliant process prior to acquisition by Diodes Incorporated. Diodes' product change notification PCN-2008-001 confirmed continued compliance for legacy ZVP devices, including ZVP4105A, with exemption 7a (lead in high-melting-temperature type solder alloys) applicable only to specific military-grade variants not distributed commercially.

Does ZVP4105A require a gate resistor for stability?

A small gate series resistor (10–100 Ω) is recommended to dampen ringing caused by trace inductance interacting with C_iss (40 pF) during fast switching. While not mandatory for DC operation, it improves EMI performance and prevents spurious turn-on in noisy environments-particularly when driving from long PCB traces or microcontroller pins with high output impedance.

ZVP4105A Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 175mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 10Ohm @ 100mA, 5V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 40 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 625mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92

ZVP4105A FAQ

1.How can I place an order for ZVP4105A through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVP4105A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVP4105A reliable?

The price and inventory of ZVP4105A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP4105A is usually 5 days.

3.What payment methods are accepted for ZVP4105A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP4105A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVP4105A?

ZVP4105A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVP4105A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVP4105A?

For technical support, including ZVP4105A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP4105A requirements.

6.How does Aetrix verify that ZVP4105A is sourced from the original manufacturer or authorized distributors?

All ZVP4105A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP4105A meets industry standards.

7.What is the process for return or replacement of ZVP4105A?

All ZVP4105A units undergo pre-shipment inspection (PSI). If there is an issue with ZVP4105A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVP4105A part is unused and in its original packaging.

Return procedure for ZVP4105A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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