Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZVP4424GTC

Part No.:
ZVP4424GTC
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixZVP4424GTC.pdf
Description:
MOSFET P-CH 240V 480MA SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,279

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZVP4424G from Diodes Incorporated is a P-channel enhancement-mode vertical DMOSFET rated for -240 V drain-source voltage, 9 Ω RDS(ON) at VGS = -10 V, and -480 mA continuous drain current at +25°C. It serves as a high-voltage electronic hook switch in telecom line interface circuits and low-power battery-operated equipment.

For engineers reviewing the ZVP4424G datasheet, ZVP4424G pinout, ZVP4424G application, or ZVP4424G equivalent, key selection criteria include verified -240 V BVDSS rating, gate threshold of -0.7 to -2.0 V, RDS(ON) performance at low gate drive (-3.5 V), thermal resistance (50 °C/W), and SOT223 package compatibility with FR-4 PCB layouts.

Technical Context

This device uses vertical DMOS architecture optimized for high-voltage blocking and low-conduction loss in normally-off switching applications. Its -240 V BVDSS and -2.0 V maximum VGS(TH) enable reliable turn-on with standard logic-level negative gate drive in telecom hook-switch and battery-isolation circuits.

Thermal design is constrained by RθJA = 50 °C/W on FR-4 with 1-inch² copper pad, and safe operating area (SOA) is limited by RDS(ON) at DC and pulse widths down to 100 µs. Dynamic parameters-including tD(OFF) = 26–40 ns and Ciss = 100–200 pF-support fast switching in low-duty-cycle control paths.

Key Specifications

ParameterValue and Actual Design Meaning
BVDSS-240 V - Enables direct interface with -48 V telecom line voltages and withstands transient surges up to ITU-T K.20/21 levels.
RDS(ON) @ VGS = -10 V9 Ω max - Limits conduction loss to ≤2.0 mW at -200 mA, suitable for low-duty-cycle hook-switch actuation.
VGS(TH)-0.7 to -2.0 V - Ensures reliable turn-on with simple negative-bias gate drivers (e.g., open-collector logic or microcontroller GPIO with pull-up).
ID (continuous)-480 mA @ TA = +25°C - Supports sustained current for electromechanical relay replacement in line-card supervision circuits.
RθJA50 °C/W - Requires minimum 1-inch² 2 oz copper pad for thermal management; derates to ~1.25 W at +70°C ambient.
Ciss100–200 pF @ VDS = -25 V - Determines gate drive power requirement and switching speed in low-frequency (<100 kHz) control loops.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 3-terminal plastic molded case with exposed drain tab for thermal conduction. Mold compound is halogen- and antimony-free, UL 94V-0 rated.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current-carrying terminal (connected to internal MOSFET channel)Exposed metal tab - must be soldered to large copper pour for thermal dissipation and electrical connection.
Source (S)Reference node for gate drive and current return pathConnected to system ground or negative rail; defines VGS reference point for threshold behavior.
Gate (G)Control electrode for channel formationHigh-impedance input requiring <100 nA leakage; sensitive to ESD; requires series resistor for ringing suppression.

Key Features

FeatureDesign Value
P-channel enhancement modeNormally-off operation ensures fail-safe behavior in telecom line interface-no current flows without active gate bias.
Low VGS(TH) range (-0.7 to -2.0 V)Enables direct drive from -3.3 V or -5 V logic outputs without level-shifting circuitry.
RDS(ON) = 8.8 Ω typical @ VGS = -3.5 VReduces gate driver complexity and power consumption in battery-powered hook-switch modules.
Lead-free, RoHS 3 & "Green" compliantMeets automotive and industrial environmental requirements: <900 ppm Br/Cl, <1000 ppm Sb, no intentionally added Pb.

Applications

Telecom Line InterfaceBattery-Powered Equipment

Use Scenario: Replacing electromechanical relays in telephone line card hook-switch circuits for on-hook/off-hook signaling.

IC Role / Device Role / Timing Role: High-voltage P-channel switch controlling -48 V line voltage under microcontroller or FPGA logic control.

Use Value: Eliminates mechanical wear, reduces board space, and enables faster, repeatable switching versus relay-based designs.

Use Scenario: Reverse-polarity protection and load switching in portable medical monitors powered by Li-ion batteries.

IC Role / Device Role / Timing Role: Low-threshold P-MOSFET used in high-side disconnect path to prevent reverse current flow during battery swap or fault conditions.

Use Value: Operates reliably with minimal gate drive overhead, preserving battery life while meeting IEC 60601-1 creepage/clearance requirements.

Electronic Hook SwitchIndustrial Sensor Node Power Control

Use Scenario: Solid-state replacement for mechanical hook switches in VoIP gateway analog front-end (AFE) stages.

IC Role / Device Role / Timing Role: Voltage-controlled switch isolating analog audio path during call setup and teardown sequences.

Use Value: Delivers consistent contact resistance over lifetime, immune to oxidation and bounce-critical for voice quality compliance.

Use Scenario: Controlled power gating for low-power wireless sensor nodes (e.g., LoRaWAN edge devices) during sleep/wake cycles.

IC Role / Device Role / Timing Role: High-side power switch enabling full system shutdown with <100 nA quiescent current when off.

Use Value: Achieves sub-µA system standby via gate leakage-limited cutoff, extending multi-year battery life in remote deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZVP3306ABVDSS = -60 V, RDS(ON) = 3.5 Ω @ VGS = -10 V, ID = -1.2 ALimited to lower-voltage systems (e.g., 12–24 V industrial controls); unsuitable for -48 V telecom line interface.Select only where voltage stress is ≤ -60 V and higher current capacity is required.
DMN3026LSDBVDSS = -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, SO-8 packageOptimized for high-current, low-voltage DC-DC and motor drive; incompatible with high-voltage isolation needs.Use when high efficiency at >1 A and surface-mount thermal relief (SO-8) are prioritized over voltage rating.

Compared with ZVP4424G, ZVP3306A offers higher current but insufficient voltage margin for telecom, while DMN3026LSD delivers ultra-low RDS(ON) at the cost of BVDSS-neither supports -240 V operation, making ZVP4424G uniquely suited for legacy telephony infrastructure and high-reliability HV switching.

Availability

ZVP4424G is available at Aetrix Electronics and suitable for telecom line interface, battery-powered medical devices, electronic hook-switch modules, and industrial sensor node power control requiring stable component supply across long-life product cycles.

Supply support for ZVP4424G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The ZVP4424G belongs to Diodes' high-voltage vertical DMOSFET product line, engineered specifically for telecom infrastructure, battery management, and solid-state relay replacement where robust -240 V blocking and low-threshold gate drive are essential.

FAQ

What is the maximum safe operating voltage for ZVP4424G in continuous DC applications?

The absolute maximum drain-source voltage (BVDSS) is -240 V, tested at ID = -1 mA with VGS = 0 V. For reliable long-term operation, design margins should limit steady-state VDS to ≤ -190 V per datasheet IDSS test condition, especially at elevated temperatures above +85°C where leakage increases.

Can ZVP4424G be driven directly from a 3.3 V microcontroller GPIO?

No-ZVP4424G is a P-channel device requiring negative gate-source voltage for turn-on. A 3.3 V GPIO alone cannot produce the necessary VGS ≤ -0.7 V. It must be paired with an inverting driver (e.g., NPN transistor or dedicated gate driver) referenced to the source potential to generate sufficient negative bias relative to the source.

Is ZVP4424G qualified for automotive applications per AEC-Q101?

No-the datasheet explicitly states that automotive qualification (AEC-Q100/101/200) and PPAP capability require direct engagement with Diodes' automotive team. Standard ZVP4424G is not AEC-Q101 certified and is intended for industrial, telecom, and consumer applications unless specially ordered and documented.

How does the SOT223 package's exposed drain tab affect PCB layout and thermal performance?

The exposed drain tab must be soldered to a minimum 1-inch² 2 oz copper pad to achieve the rated RθJA = 50 °C/W. Thermal vias under the tab improve heat transfer to inner layers; insufficient copper area or missing solder joint causes junction temperature rise exceeding safe limits-even at 50% of rated PD-and risks premature failure under pulsed loads.

ZVP4424GTC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
240 V
Current - Continuous Drain (Id) @ 25°C:
480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
3.5V, 10V
Rds On (Max) @ Id, Vgs:
9Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±40V
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

ZVP4424GTC FAQ

1.How can I place an order for ZVP4424GTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZVP4424GTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZVP4424GTC reliable?

The price and inventory of ZVP4424GTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZVP4424GTC is usually 5 days.

3.What payment methods are accepted for ZVP4424GTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZVP4424GTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZVP4424GTC?

ZVP4424GTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZVP4424GTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZVP4424GTC?

For technical support, including ZVP4424GTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZVP4424GTC requirements.

6.How does Aetrix verify that ZVP4424GTC is sourced from the original manufacturer or authorized distributors?

All ZVP4424GTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZVP4424GTC meets industry standards.

7.What is the process for return or replacement of ZVP4424GTC?

All ZVP4424GTC units undergo pre-shipment inspection (PSI). If there is an issue with ZVP4424GTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZVP4424GTC part is unused and in its original packaging.

Return procedure for ZVP4424GTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZVP4424GTC Tags

  • ZVP4424GTC
  • ZVP4424GTC PDF
  • ZVP4424GTC Datasheet
  • ZVP4424GTC Specifications
  • ZVP4424GTC Images
  • Diodes Incorporated
  • Diodes Incorporated ZVP4424GTC
  • Buy ZVP4424GTC
  • ZVP4424GTC Price
  • ZVP4424GTC Distributor
  • ZVP4424GTC Supplier
  • ZVP4424GTC Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER