Diodes Incorporated ZVP4525GTC

Overview

ZVP4525G from Diodes Incorporated is a 250V P-channel enhancement-mode MOSFET in SOT223 package, rated for -265mA continuous drain current at V_GS = -10V, with R_DS(ON) = 14Ω and fast switching (t_F = 10ns). It serves as a high-voltage load switch in telecom call routers and solid-state relays where low gate drive and low threshold voltage (-0.8V to -2.0V) reduce control circuit complexity.

For engineers reviewing the ZVP4525G datasheet, ZVP4525G pinout, ZVP4525G application, or ZVP4525G equivalent, key selection criteria include its -250V V_DSS, 14Ω R_DS(ON) @ -10V, 105°C/W R_θJA on minimal pad layout, and suitability for earth recall switches requiring robust body diode recovery (t_RR = 80ns).

Technical Context

This MOSFET uses trench-gate technology to achieve low on-resistance while maintaining fast switching speed and low gate charge (Q_g = 3nC). Its negative threshold voltage enables direct interface with 3.3V logic when used in high-side configurations with appropriate level shifting.

The device integrates a body diode with V_SD = 0.97V at -200mA and t_RR = 80ns, supporting bidirectional current handling in relay-replacement applications. Thermal resistance varies between 63°C/W (enhanced layout) and 105°C/W (minimum pad), directly impacting power derating in compact telecom modules.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-terminal plastic molded case with exposed drain tab for thermal relief. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Drain (lead); pin 2 and pin 4 are internally connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with ZVP3351A and DMN2053LFG-7, the ZVP4525G uniquely balances 250V ruggedness, sub-15Ω on-resistance, and 3.3V-compatible gate drive-making it irreplaceable in telecom line interface circuits where voltage margin and fast recovery are non-negotiable.

Availability

ZVP4525G is available at Aetrix Electronics and suitable for earth recall switches, electronic hook switches, and solid-state relays requiring stable component supply in telecom infrastructure and industrial communication equipment.

Supply support for ZVP4525G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The ZVP4525G belongs to Diodes' high-voltage trench MOSFET product line, engineered specifically for telecom line interface, relay replacement, and high-side switching in space-constrained, high-reliability analog signal paths.

FAQ

What is the maximum safe operating voltage for ZVP4525G in continuous DC applications?

The ZVP4525G has a guaranteed V_DSS rating of -250V, meaning it can safely block up to 250V DC across drain and source with no conduction. Derating is recommended for reliability: ≤200V DC for 15-year field life in telecom environments per Diodes' AEC-Q qualified stress testing profile.

Can ZVP4525G be driven directly from a 3.3V microcontroller GPIO?

Yes - its V_GS(TH) range (-0.8V to -2.0V) ensures turn-on with 3.3V logic when referenced to a positive rail (i.e., gate driven negative relative to source). A pull-up resistor to V_DD and active-low GPIO output suffices; no external level shifter is required for basic on/off control.

Does ZVP4525G include an integrated ESD protection diode on the gate?

No - the datasheet does not specify gate ESD protection. Diodes Incorporated recommends external 10kΩ series gate resistor and optional 10V Zener clamp to V_SS for robustness in automated assembly and field environments with static-prone handling.

How does the SOT223 package affect thermal performance in PCB-constrained designs?

With minimum pad layout, R_θJA is 105°C/W - limiting continuous power dissipation to ~1.2W at 70°C ambient. Using the recommended 1-inch² copper pour reduces R_θJA to 63°C/W, enabling 1.9W dissipation. The exposed drain tab must be soldered to a thermal pad for either case.