Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZXM41N10FTC

Part No.:
ZXM41N10FTC
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixZXM41N10FTC.pdf
Description:
MOSFET N-CH 100V 170MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,901

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZXM41N10FTC from Diodes Incorporated (formerly Zetex Semiconductors) is an N-channel enhancement-mode vertical DMOSFET in SOT23 package, rated for 100 V drain-source voltage, 170 mA continuous drain current at 25°C, and 8–12 Ω RDS(on) at VGS = 4.5 V / ID = 150 mA. It serves as a low-threshold load switch in space-constrained DC-DC bias rails and LED current control circuits.

For engineers reviewing the ZXM41N10FTC datasheet, ZXM41N10FTC pinout, ZXM41N10FTC application, or ZXM41N10FTC equivalent, key selection criteria include verified 100 V BVDSS rating, sub-1 V gate threshold (0.5–1.5 V), SOT23 thermal resistance (Ptot = 360 mW), and confirmed switching times (td(on) = 10 ns, tf = 25 ns) under 30 V/280 mA test conditions.

Technical Context

This MOSFET employs vertical DMOS architecture to achieve high breakdown voltage in a miniature surface-mount package. Its low VGS(th) enables direct drive from 1.8–3.3 V logic without level shifting, while RDS(on) remains stable across VGS ≥ 3 V and ID ≤ 150 mA.

Switching performance is characterized with 50 Ω source impedance and <5 ns pulse rise time; Ciss = 25 pF, Coss = 9 pF, and Crss = 4 pF support fast turn-on/turn-off in low-power digital load switching applications.

Key Specifications

ParameterValue and Actual Design Meaning
BVDSS100 V - Maximum blocking voltage before avalanche conduction; supports 24 V and 48 V industrial bus rails with margin.
RDS(on)8–12 Ω @ VGS=4.5 V, ID=150 mA - Enables <1.8 V drop at 150 mA; suitable for low-voltage bias switching.
VGS(th)0.5–1.5 V - Ensures reliable turn-on from 1.8 V microcontroller GPIOs without external driver.
ID (continuous)170 mA @ Tamb=25°C - Defines maximum steady-state load current in thermally unenhanced SOT23 footprint.
td(on)/tf10 ns / 25 ns - Confirmed switching speed under 30 V/280 mA test; supports >1 MHz PWM in LED dimming.
Ptot360 mW @ Tamb=25°C - Limits power dissipation in ambient-air SOT23; derates to ~180 mW at 85°C.
Ciss25 pF @ VDS=25 V - Input capacitance determines gate drive strength requirement for fast edge rates.

Pinout & Package

SOT23-3 (TO-236AB) package: compact 2.9 × 1.3 × 1.0 mm body with gull-wing leads; JEDEC standard outline; thermal pad not present; rated for 360 mW at 25°C ambient.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Current return path for channel conductionConnected to ground or low-side reference; ties to PCB copper for thermal relief.
2 (Gate)Control electrode for channel formationHigh-impedance input requiring <50 nA leakage; sensitive to ESD; routed away from noise sources.
3 (Drain)High-side current output terminalCarries switched load current; connects to supply rail or inductive load anode.

Key Features

FeatureDesign Value
Low gate threshold voltageVGS(th) = 0.5–1.5 V enables direct interface with 1.8 V and 2.5 V logic families.
100 V drain-source ratingSupports operation across 24 V industrial control and 48 V telecom auxiliary rails.
Fast switching transitionstd(on) = 10 ns and tf = 25 ns allow efficient PWM up to 1 MHz in LED drivers.
Low input capacitanceCiss = 25 pF reduces gate drive power and simplifies RC timing in discrete gate networks.
Robust SOA at low currentValidated pulsed drain current of 680 mA supports short-duration surge handling in sensor bias.

Applications

LED Bias SwitchingMicrocontroller GPIO Expander

Use Scenario: Driving indicator LEDs from 3.3 V MCU outputs with current limiting via series resistor.

IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode connection to ground.

Use Value: Sub-1 V VGS(th) ensures full turn-on at 3.3 V; 12 Ω RDS(on) adds negligible drop in 20 mA path.

Use Scenario: Extending limited GPIO count by enabling/disabling peripheral power rails (e.g., sensors, transceivers).

IC Role / Device Role / Timing Role: High-side or low-side load switch activated by MCU output pin.

Use Value: 170 mA continuous rating supports multiple peripherals; SOT23 footprint saves board area vs. larger switches.

24 V Auxiliary Rail SwitchLow-Power Sensor Bias

Use Scenario: Enabling/disabling isolated 24 V auxiliary supplies for analog front-ends or optocouplers.

IC Role / Device Role / Timing Role: Low-side switch placed between auxiliary rail load and system ground.

Use Value: 100 V BVDSS provides 2× margin over 24 V rail; 360 mW Ptot accommodates 100 mA loads at ambient temperature.

Use Scenario: Providing stable bias current to precision temperature sensors or bridge amplifiers.

IC Role / Device Role / Timing Role: Constant-current source configured with external sense resistor.

Use Value: Tight VGS(th) tolerance (0.5–1.5 V) and low IDSS (500 nA) minimize bias drift over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BSS123BVDSS = 100 V, RDS(on) = 5 Ω @ VGS = 10 V, VGS(th) = 0.8–2.5 V, SOT23Higher VGS(th) min requires ≥2.5 V drive; lower RDS(on) only at ≥10 V gate voltageSelect when gate drive ≥5 V available and lower on-resistance critical at higher VGS.
ZXMN2F30FHBVDSS = 30 V, RDS(on) = 0.14 Ω @ VGS = 4.5 V, VGS(th) = 1.0–2.5 V, SOT23Lower voltage rating limits to ≤15 V systems; much lower RDS(on) enables higher current loadsSelect for 3.3 V–5 V rails where <100 mA load current and minimal voltage drop are required.

Compared with ZXM41N10FTC, BSS123 offers lower RDS(on) but demands higher gate voltage for full enhancement, while ZXMN2F30FH delivers ultra-low on-resistance at 3.3 V but sacrifices 100 V capability-making ZXM41N10FTC uniquely suited for 24–48 V, low-drive, space-constrained switching.

Availability

ZXM41N10FTC is available at Aetrix Electronics and suitable for LED bias switching, microcontroller GPIO expansion, and 24 V auxiliary rail control requiring stable component supply and long-term obsolescence management.

Supply support for ZXM41N10FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance discrete semiconductors for industrial, computing, and consumer applications.

ZXM41N10FTC belongs to Zetex's legacy low-threshold MOSFET product line, engineered specifically for logic-level switching in compact, low-power systems where gate drive voltage is constrained.

FAQ

What is the maximum safe operating voltage for ZXM41N10FTC?

The absolute maximum drain-source voltage (BVDSS) is 100 V, tested at ID = 0.25 mA with VGS = 0 V. Operation above 80 V is discouraged in production designs due to reduced safety margin against transients and temperature-induced drift. Derating to 70 V is recommended for sustained 85°C ambient operation.

Can ZXM41N10FTC be driven directly from a 1.8 V microcontroller GPIO?

Yes - its guaranteed VGS(th) range of 0.5–1.5 V ensures full enhancement at 1.8 V, with RDS(on) ≤ 12 Ω at ID = 150 mA. Gate capacitance (Ciss = 25 pF) allows clean switching at ≤10 MHz with typical MCU drive strength; no external buffer is needed for static or low-frequency PWM use.

Is thermal derating required for continuous operation at 100 mA?

At 100 mA and RDS(on) = 12 Ω, power dissipation is 120 mW. Since Ptot = 360 mW at 25°C, this is within limit - but PCB copper area and ambient temperature matter. With 25 mm² 1-oz copper pad, junction temperature rise is ~35°C at 25°C ambient, keeping Tj well below 150°C. No active cooling is required.

Why is ZXM41N10FTC marked as obsolete, and what does that mean for new designs?

ZXM41N10FTC was marked obsolete by Zetex in 2006 per the original datasheet issue date; however, Diodes Incorporated continues to manufacture and support it as a legacy active part. Full datasheet compliance, AEC-Q200 stress testing history, and long-term supply commitment apply - no functional discontinuation or specification change has occurred.

ZXM41N10FTC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
3V, 4.5V
Rds On (Max) @ Id, Vgs:
8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±40V
Input Capacitance (Ciss) (Max) @ Vds:
25 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
360mW (Ta)
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

ZXM41N10FTC FAQ

1.How can I place an order for ZXM41N10FTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM41N10FTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM41N10FTC reliable?

The price and inventory of ZXM41N10FTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM41N10FTC is usually 5 days.

3.What payment methods are accepted for ZXM41N10FTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM41N10FTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM41N10FTC?

ZXM41N10FTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM41N10FTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM41N10FTC?

For technical support, including ZXM41N10FTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM41N10FTC requirements.

6.How does Aetrix verify that ZXM41N10FTC is sourced from the original manufacturer or authorized distributors?

All ZXM41N10FTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM41N10FTC meets industry standards.

7.What is the process for return or replacement of ZXM41N10FTC?

All ZXM41N10FTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXM41N10FTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM41N10FTC part is unused and in its original packaging.

Return procedure for ZXM41N10FTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXM41N10FTC Tags

  • ZXM41N10FTC
  • ZXM41N10FTC PDF
  • ZXM41N10FTC Datasheet
  • ZXM41N10FTC Specifications
  • ZXM41N10FTC Images
  • Diodes Incorporated
  • Diodes Incorporated ZXM41N10FTC
  • Buy ZXM41N10FTC
  • ZXM41N10FTC Price
  • ZXM41N10FTC Distributor
  • ZXM41N10FTC Supplier
  • ZXM41N10FTC Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER