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Diodes Incorporated ZXM61P03FTC

Part No.:
ZXM61P03FTC
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixZXM61P03FTC.pdf
Description:
MOSFET P-CH 30V 1.1A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,903

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Product details

Overview

ZXM61P03FTC from Diodes Incorporated (formerly Zetex) is a P-channel enhancement-mode MOSFET with VBRDSS = −30 V, RDS(on) = 0.35 Ω @ VGS = −10 V, ID = −1.1 A, fast switching (td(on) = 1.9 ns), and SOT23 package - used as a low-side load switch in portable DC-DC converters.

For engineers reviewing the ZXM61P03FTC datasheet, ZXM61P03FTC pinout, ZXM61P03FTC application, or ZXM61P03FTC equivalent, key selection criteria include gate threshold voltage (VGS(th) = −1.0 V), body diode forward voltage (VSD = −0.95 V), thermal resistance (RθJA = 155 °C/W), and total gate charge (Qg = 4.8 nC).

Technical Context

This device operates as a single P-channel power switch with depletion-free enhancement-mode behavior, requiring negative gate drive relative to source. Its low RDS(on) and sub-2 ns turn-on delay support high-efficiency synchronous rectification and battery-powered load control.

Designed for surface-mount operation on FR4 PCBs with 1 oz copper, it delivers 806 mW power dissipation at 25°C ambient and derates linearly at 6.4 mW/°C - validated under pulsed conditions (300 µs width, 2% duty cycle) per JEDEC JESD24-1.

Key Specifications

ParameterValue and Actual Design Meaning
VBRDSS−30 V: Maximum drain-source blocking voltage before avalanche conduction
RDS(on)0.35 Ω @ VGS = −10 V, ID = −0.6 A: Enables <100 mW conduction loss at 600 mA load
VGS(th)−1.0 V (min): Ensures full enhancement with logic-level gate drive (e.g., 3.3 V MCU GPIO)
Qg4.8 nC: Supports efficient 1–2 MHz switching with ≤10 Ω gate resistor
td(on)1.9 ns: Minimizes dead-time losses in synchronous buck topologies
VSD−0.95 V @ IS = −0.6 A: Limits reverse-current path loss during freewheeling
RθJA155 °C/W: Specifies junction-to-ambient thermal rise on standard FR4 layout

Pinout & Package

SOT23-3 (TO-236AB) package: 3-pin surface-mount plastic case with gull-wing leads; pin 1 = Gate, pin 2 = Drain, pin 3 = Source (top view, marking side up, notch left).

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeAccepts negative VGS to modulate channel conductivity; low Ciss (140 pF) reduces drive power
2 (Drain)High-side current sinkRated for −30 V blocking; connects to input rail in high-side switch or output node in low-side configuration
3 (Source)Reference terminal / current returnBonded to PCB ground plane; serves as body diode anode and gate reference point

Key Features

FeatureDesign Value
Low RDS(on) at low VGS0.55 Ω @ VGS = −4.5 V enables 3.3 V logic-compatible switching without level shifters
Fast switching speed1.9 ns turn-on + 5.0 ns fall time supports >1 MHz DC-DC operation with minimal overlap loss
Low gate charge4.8 nC total charge reduces gate driver power and EMI during transitions
Integrated body diode14.8 ns reverse recovery time (trr) and 7.7 nC Qrr suit discontinuous conduction mode (DCM) flyback

Applications

Battery-Powered Load SwitchUSB Port Power Control

Use Scenario: Enabling/disabling power to peripheral modules in handheld medical devices.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET configured as active-high load switch with internal pull-down.

Use Value: 0.35 Ω RDS(on) limits dropout to <350 mV at 1 A, preserving battery runtime.

Use Scenario: Overcurrent-protected 5 V power delivery to USB peripherals in embedded hubs.

IC Role / Device Role / Timing Role: Reverse-polarity protected disconnect switch placed between upstream port and downstream connector.

Use Value: −1.0 V VGS(th) ensures clean turn-off when host controller pulls gate high (0 V), preventing backfeed.

DC-DC Synchronous RectifierMotor Driver Half-Bridge Leg

Use Scenario: Secondary-side rectification in isolated 3.3 V/1 A buck-derived converter for IoT sensor nodes.

IC Role / Device Role / Timing Role: Synchronously commutated low-side switch replacing Schottky diode in flyback secondary.

Use Value: 4.8 nC Qg allows gate drive from same controller used for primary FET, reducing component count.

Use Scenario: Low-voltage (<12 V) brushed DC motor direction control in automotive seat adjusters.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology driving motor winding to battery rail.

Use Value: −30 V VBRDSS provides 2× margin over 12 V nominal system, accommodating load-dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305UVT-7RDS(on) = 0.045 Ω @ VGS = −4.5 V; higher ID = −4.2 A; SOT-23 packageHigher current handling suits 2–3 A loads; lower RDS(on) reduces conduction loss by >85%Select when board space permits same footprint and load exceeds 1.1 A continuous
AO3401RDS(on) = 0.085 Ω @ VGS = −4.5 V; Qg = 5.5 nC; VBRDSS = −30 VLower gate charge than DMG2305UVT but higher than ZXM61P03FTC; optimized for 1–2 MHz PWMPrefer when gate drive strength is limited and switching frequency exceeds 1.5 MHz

Compared with DMG2305UVT-7 and AO3401, ZXM61P03FTC offers the lowest gate charge (4.8 nC) and tightest VGS(th) tolerance (−1.0 V min), making it optimal for ultra-low-power, logic-level-controlled load switching where drive capability is constrained.

Availability

ZXM61P03FTC is available at Aetrix Electronics and suitable for battery management systems, USB power delivery circuits, and portable DC-DC converters requiring stable component supply across long-lifecycle industrial programs.

Supply support for ZXM61P03FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and discrete portfolio for power, signal, and protection applications.

ZXM61P03FTC belongs to Zetex's legacy "ZXM" series of logic-compatible MOSFETs designed specifically for space-constrained, low-voltage power management in portable electronics.

FAQ

What is the maximum safe operating temperature for ZXM61P03FTC?

The device has a specified junction temperature range of −55°C to +150°C. With RθJA = 155°C/W on standard FR4, sustained 625 mW dissipation raises junction temperature by ~97°C above ambient - limiting continuous operation to ≤53°C ambient at full rated current to stay within 150°C max Tj.

Can ZXM61P03FTC be used in high-side switch configurations?

Yes - as a P-channel device, it is inherently suited for high-side switching. However, gate drive must be referenced to the source (i.e., pulled down to load voltage), requiring either a charge pump or level-shifting circuit to achieve sufficient VGS swing when the source is at VIN.

Does ZXM61P03FTC have avalanche rating?

No avalanche energy rating (EAS) is specified in the datasheet. The device is rated for repetitive pulsed drain current (IDM = −4.3 A), but operation beyond VBRDSS = −30 V should be avoided unless externally clamped, as no ruggedness testing or SOA curves are provided.

Is the body diode suitable for reverse polarity protection?

Yes - the integrated body diode blocks reverse current when source is grounded and drain is connected to input. With VSD = −0.95 V at −0.6 A, it provides effective protection with <1 W dissipation at 1 A, though external Schottky may be preferred for <0.3 V drop requirements.

ZXM61P03FTC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
350mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
625mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

ZXM61P03FTC FAQ

1.How can I place an order for ZXM61P03FTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM61P03FTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM61P03FTC reliable?

The price and inventory of ZXM61P03FTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM61P03FTC is usually 5 days.

3.What payment methods are accepted for ZXM61P03FTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM61P03FTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM61P03FTC?

ZXM61P03FTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM61P03FTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM61P03FTC?

For technical support, including ZXM61P03FTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM61P03FTC requirements.

6.How does Aetrix verify that ZXM61P03FTC is sourced from the original manufacturer or authorized distributors?

All ZXM61P03FTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM61P03FTC meets industry standards.

7.What is the process for return or replacement of ZXM61P03FTC?

All ZXM61P03FTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXM61P03FTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM61P03FTC part is unused and in its original packaging.

Return procedure for ZXM61P03FTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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