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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated ZXM62N03GTA

Name: ZXM62N03GTA
Brand: Diodes Incorporated
SKU: ZXM62N03GTA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXM62N03GTA

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ZXM62N03GTA.pdf

Description:: MOSFET N-CH 30V 3.4A/4.7A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:3,390

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Product details

Overview

ZXM62N03GTA from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SOT223 package, featuring R_DS(ON) = 0.11Ω @ V_GS = 10V, I_D = 4.7A at T_A = +25°C, and qualified to AEC-Q101 for automotive-grade reliability. It serves as a high-efficiency power switch in DC-DC converters, motor control, and solenoid drivers.

For engineers reviewing the ZXM62N03GTA datasheet, ZXM62N03GTA pinout, ZXM62N03GTA application, or ZXM62N03GTA equivalent, key selection criteria include low gate threshold (V_GS(TH) = 1V min), fast switching (t_F = 6.4ns), body diode forward voltage (V_SD = 0.95V), thermal resistance (R_θJA = 32°C/W), and RoHS-compliant green packaging.

Technical Context

This MOSFET employs planar silicon process technology optimized for low R_DS(ON) while maintaining robust switching performance. Its gate threshold voltage range (1–2.5V) enables compatibility with 3.3V and 5V logic-level drive, and its body diode supports bidirectional current handling in H-bridge and flyback configurations.

The device's dynamic parameters-including C_iss = 380pF, Q_g = 9.6nC, and t_D(OFF) = 11.7ns-are specified under standardized test conditions (V_DD = 15V, R_GS = 6Ω), supporting predictable gate drive design and loss estimation in PWM-based power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - maximum blocking voltage before avalanche conduction begins
R_DS(ON)	0.11Ω @ V_GS = 10V - enables <1.2W conduction loss at 3.3A continuous drain current
I_D	4.7A @ T_A = +25°C - usable continuous current with standard PCB heatsinking
V_GS(TH)	1V min - ensures turn-on with 3.3V microcontroller GPIO without level-shifting
Q_g	9.6nC - determines gate driver power requirement and switching transition time
R_θJA	32°C/W - junction-to-ambient thermal resistance on FR-4 board, defining safe operating area at elevated ambient
t_F	6.4ns - fall time limiting minimum achievable PWM frequency before switching loss dominates

Pinout & Package

Package: SOT223 - surface-mount, 4-pin thermally enhanced plastic package with exposed drain pad for improved heat dissipation. Dimensions per Diodes Inc. outline SOT223 (D = 6.50mm, E = 3.50mm, E1 = 7.00mm).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (connected to internal die substrate)	Exposed metal tab-must be soldered to large copper pour for thermal management
Source (S)	Reference node for gate drive and current return path	Internally tied to source metallization; forms common reference for V_GS control
Gate (G)	Control electrode modulating channel conductivity	High-impedance input requiring <100nA leakage; sensitive to ESD and ringing
Source (S, second pin)	Redundant source connection for lower parasitic inductance	Provides additional low-inductance path to ground plane, critical for high-dI/dt operation

Key Features

Feature	Design Value
Low R_DS(ON)	0.11Ω @ 10V enables >95% efficiency in 5V-input buck converters delivering 3A
Logic-level gate drive	V_GS(TH) ≤ 2.5V allows direct interface with 3.3V MCU outputs without external level shifters
Fast switching speed	t_D(OFF) = 11.7ns and Q_gd = 2.8nC reduce overlap loss in high-frequency (>500kHz) SMPS designs
AEC-Q101 qualification	Validated for automotive applications including engine control modules and body electronics
Green, halogen-free construction	Meets JESD22-A112 MSL Level 1 and EU RoHS 2011/65/EU with <900ppm Br+Cl total

Applications

DC-DC Converters

Motor Control

Use Scenario: Step-down regulation in portable industrial sensors powered from 12V battery rails.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 500kHz buck converter stage.

Use Value: Low R_DS(ON) reduces conduction loss by 35% vs. legacy 0.2Ω MOSFETs, extending battery life.

Use Scenario: Bidirectional 24V brushed DC motor drive in HVAC actuator modules.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with integrated body diode freewheeling.

Use Value: V_SD = 0.95V limits reverse recovery energy, reducing heat generation during direction reversal.

Audio Output Stage

Relay/Solenoid Driving

Use Scenario: Class-D amplifier output stage driving 8Ω speakers in automotive infotainment head units.

IC Role / Device Role / Timing Role: Output power switch with fast t_R/t_F minimizing PWM distortion at 300kHz carrier.

Use Value: C_oss = 90pF and Q_gd = 2.8nC suppress shoot-through risk and improve THD+N performance.

Use Scenario: 24V solenoid valve control in smart irrigation controllers.

IC Role / Device Role / Timing Role: Single-pole switch replacing mechanical relay to eliminate contact wear and bounce.

Use Value: I_DM = 16A pulsed rating safely handles 10× inrush current of 1.5A solenoids during activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3032LE	R_DS(ON) = 0.032Ω @ 10V, SOT23-3 package, higher current density but lower thermal mass	Preferred for space-constrained, low-power (<1A) loads where PCB area is critical	Select DMN3032LE only when footprint reduction outweighs need for higher pulse current capability
ZXMN6A11G	R_DS(ON) = 0.055Ω @ 10V, same SOT223 package, lower V_GS(TH) (0.6V min), higher Q_g (12.5nC)	Better suited for ultra-low-voltage gate drive (e.g., 1.8V MCUs) but increases driver loss at 500kHz+	Choose ZXMN6A11G if gate drive voltage is ≤2.5V and switching frequency remains below 300kHz

Compared with ZXM62N03GTA, DMN3032LE offers lower R_DS(ON) in a smaller package but sacrifices pulse current margin and thermal stability, while ZXMN6A11G improves low-voltage turn-on at the cost of higher gate charge and reduced high-frequency efficiency.

Availability

ZXM62N03GTA is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and solenoid driver circuits requiring stable component supply and automotive-grade reliability.

Supply support for ZXM62N03GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan and China.

The ZXM series targets cost-sensitive, high-volume power management applications with emphasis on logic-level drive, thermal robustness, and AEC-Q101 compliance for automotive and industrial end equipment.

FAQ

Is ZXM62N03GTA suitable for 3.3V microcontroller gate drive?

Yes. With V_GS(TH) minimum of 1V and guaranteed R_DS(ON) ≤ 0.15Ω at V_GS = 4.5V, it fully turns on using standard 3.3V GPIO outputs. Measured R_DS(ON) at 3.3V is 0.22Ω, supporting up to 2.1A continuous current with acceptable thermal rise on 25mm × 25mm PCB.

What is the maximum safe operating temperature for continuous use?

The device supports continuous operation up to T_J = +150°C. At T_A = +70°C, derated I_D is 3.8A (V_GS = 10V). To maintain T_J ≤ 125°C in typical SOT223 mounting, limit power dissipation to ≤1.2W using ≥10cm² 1oz copper pour, verified via R_θJA = 32°C/W.

Does ZXM62N03GTA include an integrated body diode?

Yes. It features a monolithic intrinsic body diode with V_SD = 0.95V at I_S = 2.2A and T_J = +25°C. Reverse recovery time t_RR = 18.8ns and Q_RR = 11.4nC are characterized for inductive flyback applications, enabling reliable freewheeling in H-bridge and relay drive topologies.

Why is ZXM62N03GTA marked "Not Recommended for New Design"?

Diodes Incorporated issued this notice because newer alternatives (e.g., DMN3032LE, ZXMN6A11G) offer superior R_DS(ON), lower Q_g, or enhanced thermal performance. The ZXM62N03GTA remains fully functional and supported for existing designs, with no obsolescence timeline announced as of January 2024.

ZXM62N03GTA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Ta), 4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

ZXM62N03GTA FAQ

1.How can I place an order for ZXM62N03GTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM62N03GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM62N03GTA reliable?

The price and inventory of ZXM62N03GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM62N03GTA is usually 5 days.

3.What payment methods are accepted for ZXM62N03GTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM62N03GTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM62N03GTA?

ZXM62N03GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM62N03GTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM62N03GTA?

For technical support, including ZXM62N03GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM62N03GTA requirements.

6.How does Aetrix verify that ZXM62N03GTA is sourced from the original manufacturer or authorized distributors?

All ZXM62N03GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM62N03GTA meets industry standards.

7.What is the process for return or replacement of ZXM62N03GTA?

All ZXM62N03GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXM62N03GTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM62N03GTA part is unused and in its original packaging.

Return procedure for ZXM62N03GTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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