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Diodes Incorporated ZXM62P03GTA

Part No.:
ZXM62P03GTA
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixZXM62P03GTA.pdf
Description:
MOSFET P-CH 30V 2.9A/4A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,949

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Product details

Overview

ZXM62P03GTA from Zetex is a P-channel enhancement-mode MOSFET rated for -30 V VDS, 0.15 Ω RDS(on) at -10 V VGS, and -4.0 A continuous drain current at 25°C, designed as a low-voltage power switch in DC-DC converters and motor control stages.

For engineers reviewing the ZXM62P03GTA datasheet, ZXM62P03GTA pinout, ZXM62P03GTA application, or ZXM62P03GTA equivalent, key selection criteria include its SOT223 package thermal resistance (32.2 °C/W), fast switching (td(on) = 2.8 ns), body diode recovery (trr = 19.9 ns), and gate threshold of -1.0 V.

Technical Context

This MOSFET operates in enhancement mode with negative gate-source voltage control, requiring VGS(th) ≤ -1.0 V to initiate conduction and fully enhancing at VGS = -10 V. Its trench structure enables low RDS(on) while maintaining fast dynamic performance.

It integrates a built-in body diode with VSD = -0.95 V at -1.6 A and trr = 19.9 ns under specified conditions, supporting synchronous rectification and inductive load switching without external freewheeling diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating-30 V - maximum blocking voltage in off-state, suitable for 24 V rail systems with margin
RDS(on)0.15 Ω @ VGS = -10 V, ID = -1.6 A - enables <1 W conduction loss at 2 A load
ID Continuous-4.0 A @ TA = 25°C - usable in compact SOT223 power stages up to ~8 W dissipation
Qg10.2 nC - determines gate drive energy and switching speed with standard 6.2 Ω resistor
tr/tf6.4 ns / 10.3 ns - supports >10 MHz switching in high-efficiency buck regulators
RθJA32.2 °C/W - achievable with minimal copper pour; junction rises ~100°C at 3.1 W ambient dissipation
VGS(th)-1.0 V - compatible with 3.3 V logic-level gate drivers when used with pull-up biasing

Pinout & Package

SOT223 package: surface-mount, 4-pin (3 active + tab), thermally enhanced with exposed drain pad; footprint per Zetex drawing (A=6.5 mm, L=7.0 mm, E=3.0 mm).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalReference node for gate drive; connects to load return or ground in high-side switch configuration
Pin 2 (Gate)Control inputReceives negative VGS to turn on; requires stable -10 V for full RDS(on) specification
Pin 3 (Drain)Power outputConnected to input rail; ties to exposed metal tab for thermal and electrical continuity
Tab (Drain)Drain terminal & thermal pathPrimary heat sink interface; must be soldered to ≥25 mm² 1 oz copper for RθJA = 32.2 °C/W rating

Key Features

FeatureDesign Value
Trench process architectureEnables 0.15 Ω RDS(on) in SOT223 - 40% lower than planar equivalents at same voltage class
Low gate charge (Qg = 10.2 nC)Reduces driver power loss and enables efficient operation with low-current gate drivers
Fast body diode (trr = 19.9 ns)Minimizes reverse recovery loss in synchronous buck and H-bridge motor drives
Low VGS(th) (-1.0 V)Allows partial turn-on with 3.3 V logic, simplifying level-shifting in low-voltage control circuits
Thermally optimized SOT22332.2 °C/W RθJA with minimal PCB copper - supports higher power density than SO-8 alternatives

Applications

DC-DC ConvertersAudio Output Stages

Use Scenario: Step-down regulation in portable 12 V–3.3 V power rails for microcontrollers and sensors.

IC Role / Device Role: Synchronous high-side switch in buck converter topology.

Use Value: 0.15 Ω RDS(on) and 10.2 nC Qg enable >92% efficiency at 2 A, 500 kHz switching.

Use Scenario: Class-AB headphone amplifier output stage driving 32 Ω loads.

IC Role / Device Role: Complementary P-channel switch in output pair with N-channel counterpart.

Use Value: Low VGS(th) (-1.0 V) ensures matched turn-on with N-MOSFETs, minimizing crossover distortion.

Relay/Solenoid DrivingMotor Control

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V industrial solenoids.

IC Role / Device Role: Low-side or high-side load switch with integrated flyback diode handling.

Use Value: Body diode VSD = -0.95 V and trr = 19.9 ns suppress inductive kick reliably without snubber components.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for robotics and actuators.

IC Role / Device Role: High-side P-MOSFET in dual half-bridge configuration.

Use Value: Fast tf = 10.3 ns limits shoot-through risk during PWM dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305UVT-7RDS(on) = 0.045 Ω @ -4.5 V VGS; SOT-23 package; lower voltage rating (-20 V)Better suited for 3.3 V/5 V logic-driven loads; insufficient for 24 V bus switchingSelect when gate drive is limited to ≤ -4.5 V and VDS stress remains <16 V
SI2301DS-T1-E3RDS(on) = 0.115 Ω @ -4.5 V; SOT-23; Qg = 5.4 nC; lower ID (-2.7 A)Higher switching efficiency at low current, but derates rapidly above 1.5 A due to thermal limitsPrefer for space-constrained, <1.5 A pulsed loads where gate drive is weak

Compared with DMG2305UVT-7 and SI2301DS-T1-E3, ZXM62P03GTA delivers superior 24 V system compatibility, higher continuous current capability, and robust thermal performance in SOT223 - making it optimal for industrial DC-DC and motor control where voltage margin and power density matter.

Availability

ZXM62P03GTA is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and relay/solenoid driver circuits requiring stable component supply across production lifecycles.

Supply support for ZXM62P03GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex (now part of Diodes Incorporated) specialized in high-performance analog and discrete semiconductors, with focus on efficiency-critical power devices for industrial and portable electronics.

ZXM62P03GTA belongs to Zetex's trench-based low-voltage P-channel MOSFET family, engineered specifically for high-efficiency, low-RDS(on) switching in space-constrained 12–30 V power management systems.

FAQ

What is the maximum safe operating temperature for ZXM62P03GTA?

The device supports junction temperatures from -55°C to +150°C. With RθJA = 32.2 °C/W and 3.9 W power dissipation limit at 25°C ambient, sustained operation above 100°C junction requires active cooling or derating below 2.5 A continuous current.

Can ZXM62P03GTA be driven directly by a 3.3 V microcontroller GPIO?

No - its VGS(th) is -1.0 V, but full enhancement requires -10 V for 0.15 Ω RDS(on). A 3.3 V signal yields only partial turn-on (RDS(on) > 0.5 Ω). Use a dedicated gate driver or level shifter to apply sufficient negative gate voltage.

Does ZXM62P03GTA include an integrated body diode, and what are its characteristics?

Yes - it features a monolithic body diode with forward voltage VSD = -0.95 V at -1.6 A and reverse recovery time trr = 19.9 ns at 25°C. This diode is rated for continuous source current up to 2.4 A and supports inductive load commutation without external diodes.

Is the SOT223 package lead-free and RoHS compliant?

Yes - ZXM62P03GTA was manufactured to RoHS Directive 2002/95/EC compliance per Zetex documentation (Issue 2, December 2002), with lead-free terminations and halogen-free molding compound, verified via material declarations from Diodes Incorporated.

ZXM62P03GTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2.9A (Ta), 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

ZXM62P03GTA FAQ

1.How can I place an order for ZXM62P03GTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXM62P03GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXM62P03GTA reliable?

The price and inventory of ZXM62P03GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXM62P03GTA is usually 5 days.

3.What payment methods are accepted for ZXM62P03GTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXM62P03GTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXM62P03GTA?

ZXM62P03GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXM62P03GTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXM62P03GTA?

For technical support, including ZXM62P03GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXM62P03GTA requirements.

6.How does Aetrix verify that ZXM62P03GTA is sourced from the original manufacturer or authorized distributors?

All ZXM62P03GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXM62P03GTA meets industry standards.

7.What is the process for return or replacement of ZXM62P03GTA?

All ZXM62P03GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXM62P03GTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXM62P03GTA part is unused and in its original packaging.

Return procedure for ZXM62P03GTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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